MOSPOWER Selector Guide MOSPOWER Selector Guide, (Continued) N-Channel MOSPOWER R (Continued) Breakdown - Ip Power Patt Device Voltage (ones) Continuous Dissipution N oD (Volts) (Ohms (Amps) (Watts) umber 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 14.0 75 VN1200D 120 0.25 12.0 75 VN12Q1D 120 6.0 1.4 20 VN1206D 100 0.085 27.0 125 IRF540 100 0.11 24.0 125 IRF542 100 0.18 14.0 75 VN1000D 100 0.18 14.0 75 IRF530 100 0.25 12.0 75 VN1001D 100 0.25 12.0 75 IRF532 . 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 iIRF522 80 0.18 14.0 75 VNO800D 80 0.25 12.0 75 VNO0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 20 VN89AD 60 0.085 27.0 125 IRF541 60 0.11 24.0 125 IRF543 60 0.12 18.0 75 VNO600D 60 0.15 16.0 75 VNO601D 60 0.18 14.0 75 IRF531 60 0.25 12.0 75 IRF533 60 0.30 8.0 40 IRF521 60 0.40 7.0 40 IRF523 60 3.0 1.9 20 VN66AD 60 3.5 1.8 20 VN67AD 40 0.12 18.0 75 VNO400D 40 0.15 16.0 75 VNO401D 40 3.0 1.9 20 VN46AD 40 5.0 1.5 20 VN40AD 30 1.2 2.5 20 VNO300D 80 4.0 1.5 15 VN88AF 80 45 1.4 15 VN89AF 80 5.0 1.3 15 VNS80AF 60 3.0 1.7 15 " VNBG6AF 60 3.5 1.6 15 *NNG7TAF A 40 3.0 16 15 VN46AF. TO-202A 40 5.0 1.3 15 VN40AF 240 6.0 0.8 6.25 VN2406B 170 6.0 0.8 6.25 VN1706B 120 6.0 0.8 6.25 VN1206B 100 0.3 6.0 20 IRFF120 100 0.4 5.0 20 IRFF122 90 4.0 0.9 6.25 2N6661 90 45 0.9 6.25 VNI9SAB 90 5.0 0.8 6.25 VNS0AB 60 0.3 6.0 20 IRFF121 + 60 0.4 5.0 20 IRFF123 0-38 60 3.0 1.1 6.25 2N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 _35 25 412 6.25 VN35AB Siliconix| converters, solenoid and relay drivers. IRFF120 @ IRFF124 IRFF122 IRFFI23 4 OOV;: -Channel Enhancement Mode MOSPOWER These power FETs are designed especially for offline switching regulators, power Siliconix Advanced Information FEATURES Product Summary " No Second Breakdown Necber | BYoss | Rosin | Ip Package u High Input Impedance serie Tow a Internal Drain-Source Diode 0.302 6A = Very Rugged: Excellent SOA ~~ T0-39 a Extremely Fast Switching 0.402 5A IRFF123 60V BENEFITS wu Reduced Component Count a Improved Performance a Simpler Designs a Improved Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Gate Current (Peak) ..................-005. + 3A IRFFI20,IRFFI22 1.6... eee eee ees 100V Gate Source Voltage .........0... 0. cucu ee + 40V IRFFI21,IRFF123 Terese er seree reese 60V Total Power Dissipation ................... 20W : Drain-Gate Voltage Linear Derating Factor .............. O.16WIC IRFF120,IRFF122 00.0... . ccc cece eee eee 100V . IRFF121,IRFF123 6OV Storage and Junction , a yo es Temperature ............0005 ~55C to +150C Drain Current Continuous IRFF(20,IRFFI21 .... cee cee cece cee + 6A IRFF122,IRFF124 + 5A Notes: GIS ww was wow was aes rersteeeee ~ 1. Limited by package dissipation. Pulsed?.......... 0... ccbecceev cease Sve eeeee + 24A 2. Pulse test80us to 300us, 1% duty cycle. PACKAGE DIMENSIONS 0.200 112.70) osss| a0 MIN. | BASE (S SOLID KOVAR (ALLOY 42) 0.335 (6.101 asp {8.00} 0.380 fr FE 0.200. gaat - 15.087 (8.89) | | aT fo T oss _.| (__ Laceacs coce 2.021 522 oy, (3.18) Oo1e 405) BOTTOM VIEW PIN 1 Source PIN 2 Gate FIN 3 & CASE Drain TO-39 2-0 SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Symbol _| Parameter [Part Number] min | Typ | Max | Unit | Tast Conditions Static IRFF 120 IRFF 122 | 100 BVpss Drain-Source Breakdown V_ | Ves=0, Ip = 250pnA IRFF 121 60 IRFF 123 Vasith) Gate Threshold Voltage All 2 4 V1 Ves=Vps, lp=1mA lass Gate Body Leakage All #100 | nA | Vgg= +20V, Vpg=0 loss Zero Gate Voltage Drain All 01 | 0.25 | a [Vos= Rated Vos, Vag =0 Current o2[ 1 Vps = Rated Vos, Vag =9, To = 125C . IRFF 120 r Drain-Source On IRF 121 078 | Oe Nese 10V, Ip =3A (Note 1) DS(on) | Resistance IRFF 122 030 | 0.40 Sse = IRFF 123 . . Dion On-State Drain Current All 6 A | Vps= 15V, Veg = 10V (Note 1) Dynamic dts Forward Transconductance Alt 15 25 S | Vos =25V, lpg =3A (Note 1) Ciss input Capacitance All 450 600 Reverse Transfer Crss Capacitance All 50 | 100 | oF | Vas=0, Vos =25V, f= 1MHz Common-Source Output Coss Capacitance All 200 400 tajon) Turn-On Delay Time All 20 40 ty Rise Time All 35 70 ns Vop = 30V, Ip=3A, R, = 109, Rg =102 tarotfy Turn-Off Delay Time All 50 100 (Figure 1) te Fall Time All 35 70 . Drain-Source Diode Characteristics Vsp Forward ON Voltage Alt -25 V_ | Is=6A, Vgg=0 (Note 1) =~ =0, di/dt =1 tre Reverse Recovery Time All 150 ns figure 3 O 0, di/dt = 100Alus Note 1; Pulse Test 80us to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 Reverse Recovery Test Circuit 500 sifdt Adjust (1-274) 4 * 5 TO 50uF _ 7 iN4933 z 7 _ 1pKyAdjust , 7 | ! | l ~ te | a | 2400 rc + 2 1N4001 | sovour seg + | | - 9 | i RS 0.250 | | CIRCUIT = | LS 0.044 PULSE UNDER [genenaror} [TEST _! 14 i WwW PW. = 1 us Cg <50 pF INa723 Pr 2N4204 DUTY CYCLE = 1% SCOPE | FROM TRIGGER CKT : Siliconix 2-1 Spada = COhAAal = bbs = Odds