IXTP450P2 - IXYS - Pdf.Support

VDSS = 500V

ID25 = 16A

RDS(on) ≤≤

≤≤

≤ 330mΩΩ

ΩΩ

Ω

trr(typ) = 400ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V

VGSS Continuous ± 30 V

VGSM Transient ± 40 V

ID25 TC= 25°C16A

IDM TC= 25°C, Pulse Width Limited by TJM 48 A

IATC= 25°C16A

EAS TC= 25°C 750 mJ

dv/dt IS≤ IDM, VDD ≤ VDSS,T

J ≤ 150°C 10 V/ns

PD TC= 25°C 300 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque 1.13/10 Nm/lb.in.

Weight TO-220 3.0 g

TO-3P 5.5 g

TO-247 6.0 g

IXTP450P2

IXTQ450P2

IXTH450P2

Polar2TM

Power MOSFETs

Features

zAvalanche Rated

zFast Intrinsic Diode

zDynamic dv/dt Rated

zLow Package Inductance

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC-DC Converters

zLaser Drivers

zAC and DC Motor Drives

zRobotics and Servo Controls

G = Gate D = Drain

S = Source Tab = Drain

TO-3P (IXTQ)

D

G

S

GDS

TO-220AB (IXTP)

TO-247(IXTH)

GDS

Tab

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 500 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V

IGSS VGS = ± 30V, VDS = 0V ± 100 nA

IDSS VDS = VDSS, VGS = 0V 5 μA

TJ = 125°C 25 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 330 mΩ

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTP450P2 IXTQ450P2

IXTH450P2

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 20V, ID = 0.5 • ID25, Note 1 12 20 S

Ciss 2280 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 257 pF

Crss 30 pF

td(on) 16 ns

tr 10 ns

td(off) 50 ns

tf 18 ns

Qg(on) 43 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 nC

Qgd 11 nC

RthJC 0.42 °C/W

RthCS TO-220 0.50 °C/W

RthCS TO-3P & TO-247 0.25 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 16 A

ISM Repetitive, Pulse Width Limited by TJM 64 A

VSD IF = IS, VGS = 0V, Note 1 1.3 V

trr 400 ns

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IF = 16A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 10Ω (External)

Terminals: 1 - Gate 2 - Drain

3 - Source

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-247 Outline

TO-3P Outline

1 - Gate 2 - Drain

3 - Source

TO-220 Outline

IXTP450P2 IXTQ450P2

IXTH450P2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

2

4

6

8

10

12

14

16

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

7V

6

V

5

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25 30

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

7V

5

V

6

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

2

4

6

8

10

12

14

16

0123456789101112

V

DS

- Vo lts

I

D

- Amperes

4

V

5V

V

GS

= 10V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 8A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 16A

I

D

= 8A

Fig. 5. R

DS(on)

Normalized to I

D

= 8A Value vs.

Drain Current

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

0 5 10 15 20 25 30 35 40 45 50

I

D

- A mperes

R

DS(on)

- Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temp er atu re

0

2

4

6

8

10

12

14

16

18

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTP450P2 IXTQ450P2

IXTH450P2

Fig. 7. Input Admittance

0

5

10

15

20

25

30

35

40

3.03.54.04.55.05.56.06.57.0

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

10

20

30

40

50

0 5 10 15 20 25 30 35 40

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

5

10

15

20

25

30

35

40

45

50

0.30.40.50.60.70.80.91.01.1

V

SD

- V olts

I

S

- Amper es

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 40 45

Q

G

- NanoCou lomb s

V

GS

- Volts

V

DS

= 250V

I

D

= 8A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- V olts

Capacitance - Pi coF ar ads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. F o rwa r d- B ia s Safe Op er ati n g Area

0.1

1

10

100

10 100 1,000

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

100µs

1ms

R

DS(on)

Limit 25µs

IXTP450P2 IXTQ450P2

IXTH450P2

IXYS REF: T_450P2(5J-N45) 10-17-11

F i g . 13. Ma xi mum Transi e n t Ther mal Imped an ce

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W