Advance Technical Information IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 4A 2.2 TO-252 (IXFY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 4 A IDM TC = 25C, Pulse Width Limited by TJM 8 A IA TC = 25C 2 A EAS TC = 25C 200 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 35 V/ns PD TC = 25C 114 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL 1.6mm (0.062) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 30V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 10 A 100 A z z V 5.0 V z Applications z TJ = 125C z z RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 2.2 z z (c) 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100427(12/11) IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 * ID25, Note 1 2.2 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 30 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd TO-252 AA Outline 3.7 S 6.0 365 pF 46 pF 3 pF 15 ns 24 ns 24 ns 23 ns 6.9 nC 1.7 nC 2.8 nC 1. Gate 2. Drain 3. Source 4. Drain Bottom Side 1.10 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC 4 A H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 Repetitive, Pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.4 V L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 trr QRM IRM IF = 4A, -di/dt = 25A/s 250 ns C A 0.35 2.15 VR = 100V 1.02 1.27 2.92 TO-220 Outline Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain 1 = Gate 2 = Drain 3 = Source 4 = Drain Bottom Side ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C 7 4 VGS = 10V 8V 3.5 3 7V 5 2.5 ID - Amperes ID - Amperes VGS = 10V 8V 6 2 1.5 6V 7V 4 3 2 1 6V 1 0.5 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 4 3.4 VGS = 10V 7V 3.5 VGS = 10V 3.0 R DS(on) - Normalized 3 6V ID - Amperes 20 VDS - Volts VDS - Volts 2.5 2 1.5 1 2.6 I D = 4A 2.2 I D = 2A 1.8 1.4 1.0 5V 0.5 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 3.4 VGS = 10V 4 3.0 3 ID - Amperes R DS(on) - Normalized TJ = 125C 2.6 2.2 1.8 2 1.4 TJ = 25C 1 1.0 0.6 0 0 1 2 3 4 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 5 6 7 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 7 5 4.5 TJ = - 40C 6 4 5 g f s - Siemens ID - Amperes 3.5 3 2.5 2 TJ = 125C 25C - 40C 1.5 25C 4 125C 3 2 1 1 0.5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 0.5 1 1.5 Fig. 9. Forward Voltage Drop of Intrinsic Diode 2.5 3 3.5 4 4.5 5 5.5 Fig. 10. Gate Charge 12 10 VDS = 300V 9 I D = 2A 10 8 I G = 10mA 7 VGS - Volts 8 IS - Amperes 2 ID - Amperes VGS - Volts 6 TJ = 125C 4 6 5 4 3 TJ = 25C 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 1 VSD - Volts 2 3 4 5 6 7 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 10 RDS(on) Limit 100 100s ID - Amperes Capacitance - PicoFarads 25s Ciss Coss 1 10 TJ = 150C f = 1 MHz TC = 25C Single Pulse Crss 1ms 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Fig. 13. Maximum Transient Thermal Impedance 10 Fig. 13. Maximum Transient Thermal Impedance aaaaaa 2 Z (th)JC - C / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_4N60P3(K2)12-07-11