MBR20xxCT, MBRF20xxCT, MBRB20xxCT
www.vishay.com Vishay General Semiconductor
Revision: 21-Nov-16 1Document Number: 88674
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Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 10 A
VRRM 35 V to 60 V
IFSM 150 A
VF0.57 V, 0.70 V
TJ max. 150 °C
Package TO-220AB, ITO-220AB,
TO-263AB
Diode variations Dual common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR20xxCT
ITO-220AB
MBRF20xxCT
MBRB20xxCT
PIN 1
PIN 2
K
HEATSINK
1
2 3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
123
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2035CT MBR2045CT MBR2060CT UNIT
Maximum repetitive peak reverse voltage VRRM 35 45 60
VWorking peak reverse voltage VRWM 35 45 60
Maximum DC blocking voltage VDC 35 45 60
Maximum average forward rectified current
at TC = 135 °C
total device IF(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 150
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz IRRM 1.0 0.5
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction temperature range TJ-65 to +150 °C
Storage temperature range TSTG -65 to +175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min VAC 1500 V