1
Motorola Thyristor Device Data
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies.
•Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(Gate Open, TJ = –40 to 125°C) 2N6394
2N6395
2N6397
2N6398
2N6399
VDRM, VRRM 50
100
400
600
800
Volts
RMS On–State Current (TC = 90°C) (All Conduction Angles) IT(RMS) 12 Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine W ave, 60 Hz, TJ = 125°C) ITSM 100 Amps
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
Forward Peak Power PGM 20 Watts
Forward Average Gate Power PG(AV) 0.5 Watt
Forward Peak Gate Current IGM 2Amps
Operating Junction Temperature Range TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2°C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6394/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
REV 1
CASE 221A-07
(TO-220AB)
STYLE 3
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
AG
Motorola preferred devices
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM, IRRM —
——
—10
2µA
mA
*Forward “On” Voltage
(ITM = 24 A Peak) VTM —1.7 2.2 Volts
*Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms) IGT — 5 30 mA
*Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
(VD = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
VGT
VGD —
0.2 0.7
—1.5
—
Volts
*Holding Current
(VD = 12 Vdc, Gate Open) IH— 6 40 mA
Turn-On Time
(ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM)tgt — 1 2 µs
Turn-Off Time (VD = Rated VDRM)
(ITM = 12 A, IR = 12 A)
(ITM = 12 A, IR = 12 A, TJ = 125°C)
tq—
—15
35 —
—
µs
Critical Rate–of–Rise of Off-State Voltage Exponential
(VD = Rated VDRM, TJ = 125°C) dv/dt — 50 — V/µs
*Indicates JEDEC Registered Data.
C
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
°
6.0
120
90
100
110
130
60
°
α
= 30
°
0 1.0 2.0 3.0 8.0
α
= CONDUCTION ANGLE
FIGURE 1 — CURRENT DERATING
IT
(
AV
)
, A VERAGE ON-STATE CURRENT (AMPS)
α
90
°
P , AVERAGE POWER (WATTS)
(AV)
12
0
4.0
8.0
20
TJ
≈
125
°
C
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
IT
(
AV
)
, A VERAGE ON-STATE CURRENT (AMPS) 7.00 1.0 2.0 3.0 8.0
α
= CONDUCTION ANGLE
α
4.0 5.0 7.0
180
°
dc
10
2.0
6.0
18
14
16
4.0 5.0 6.0
60
°
α
= 30
°
90
°
180
°
dc
125
95
105
115
3
Motorola Thyristor Device Data
FIGURE 3 — ON–STATE CHARACTERISTICS FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 5 — THERMAL RESPONSE
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.0
1.2
0.1
Z
θ
JC(t) = R
θ
JC
•
r(t)
1.0
60 SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TJ = 125
°
C
f = 60 Hz
NUMBER OF CYCLES
70
80
90
100
20
2.0 3.0 4.0 6.0 8.0 10
0.1 0.4
0.01
t, TIME (ms)
3.0 5.0
50
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vTH, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
2.8 4.43.6 5.2 6.02.0
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESIST ANCE
(NORMALIZED) TM
i
, INSTANTANEOUS ON–STATE CURRENT (AMPS)
TJ = 25
°
C125
°
C1 CYCLE
55
65
75
85
95
4 Motorola Thyristor Device Data
I , HOLDING CURRENT (mA)
H
TYPICAL CHARACTERISTICS
1401201008060400–60
30
–20–40 20
TJ, JUNCTION TEMPERATURE (
°
C)
20
10
3.0
3.0
1.0
0.7
0.5
0.3
5.0
2.0
OFF-STATE VOLTAGE = 12 V
FIGURE 7 — GATE TRIGGER CURRENT
FIGURE 9 — HOLDING CURRENT
FIGURE 6 — PULSE TRIGGER CURRENT
OFF-STATE VOLTAGE = 12 V
30
50
20
10
5.0
70
7.0
1401201008060400–20–40 20
TJ, JUNCTION TEMPERATURE (
°
C)
2001005020105.00.2 1.00.5 2.0 PULSE WIDTH (
m
s)
IGTM
IGT
VGT
1401201008060400–60
1.0
–20–40 20
TJ, JUNCTION TEMPERATURE (
°
C)
0.8
0.6
0.4
0.5
FIGURE 8 — GATE TRIGGER VOLTAGE
, PEAK GATE CURRENT (mA)
3.0
100
200
300
160
, GATE TRIGGER VOLTAGE (VOLTS)
0.7
1.1
0.9
OFF-STATE VOLTAGE = 12 V OFF-STATE VOLTAGE = 12 V
7.0
TJ = –40
°
C
25
°
C
100
°
C
, GATE TRIGGER CURRENT (NORMALIZED)
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
A
K
L
V
GD
N
Z
H
Q
FB
123
4
–T–
SEATING
PLANE
S
R
J
U
TC
CASE 221A–07
ISSUE Z
6 Motorola Thyristor Device Data
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2N6394/D
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