IXTK120N65X2 - IXYS - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25C to 150C 650 V

VDGR TJ= 25C to 150C, RGS = 1M650 V

VGSS Continuous  30 V

VGSM Transient  40 V

ID25 TC= 25C 120 A

IDM TC= 25C, Pulse Width Limited by TJM 240 A

IATC= 25C15A

EAS TC= 25C 3.5 J

PDTC= 25C 1250 W

dv/dt IS IDM, VDD  VDSS, TJ  150°C 50 V/ns

TJ-55 ... +150 C

TJM 150 C

Tstg -55 ... +150 C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-264P) 1.13/10 Nm/lb.in

FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb

Weight TO-264P 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 650 V

VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V

IGSS VGS =  30V, VDS = 0V 200 nA

IDSS VDS = VDSS, VGS = 0V 25 A

TJ = 125C 500 A

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 23 m

IXTK120N65X2

IXTX120N65X2

VDSS = 650V

ID25 = 120A

RDS(on) 



 23m





DS100677B(03/16)

Features

International Standard Packages

Low QG

Avalanche Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

N-Channel Enhancement Mode

Avalanche Rated

X2-Class

Power MOSFET

Preliminary Technical Information

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXTX)

Tab

GDS

TO-264P (IXTK)

S

G

DTab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTK120N65X2

IXTX120N65X2

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 120 A

ISM Repetitive, Pulse Width Limited by TJM 480 A

VSD IF = IS , VGS = 0V, Note 1 1.4 V

trr 505 ns

QRM 15 μC

IRM 58 A

IF = 60A, -di/dt = 100A/s

VR = 100V, VGS = 0V

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 66 110 S

RGi Gate Input Resistance 0.77 

Ciss 13.6 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 9500 pF

Crss 8.9 pF

Co(er) 425 pF

Co(tr) 1960 pF

td(on) 32 ns

tr 24 ns

td(off) 87 ns

tf 10 ns

Qg(on) 230 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 74 nC

Qgd 65 nC

RthJC 0.10C/W

RthCS 0.15C/W

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1(External)

Effective Output Capacitance

Energy related

Time related

VGS = 0V

VDS = 0.8 • VDSS

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Terminals: 1 - Gate

2,4 - Drain

3 - Source

PLUS247TM Outline

TO-264P Outline

Terminals: 1 = Gate

2,4 = Drain

3 = Source

4

c

Ab

D

R

Q

A

E

D1

R1

L1

Q1

E1

b1

e

b2

x2

123

D2

A2

R

b

C

A

A1

D2

E1

b2 2 PLCS

3 PLCS

E

L1

b4

2 PLCS

D1

D

4

Q

e

1 2 3

IXTK120N65X2

IXTX120N65X2

Fig. 4. R

DS(on)

Normalized to I

D

= 60A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigr ade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 120A

I

D

= 60A

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

0 0.5 1 1.5 2 2.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

7V

5V

Fig. 2. Extended Output Charac teristics @ T

J

= 25ºC

0

40

80

120

160

200

240

280

0 2 4 6 8 101214161820

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

7V

5V

8V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

20

40

60

80

100

120

0123456

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

4V

Fig. 6. Normalized Breakdown & Threshold Voltages

vs . J u nction Tem pe ratu re

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

Fig. 5. R

DS(on)

No rmalized to I

D

= 60A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 40 80 120 160 200 240 280

I

D

- A m peres

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTK120N65X2

IXTX120N65X2

Fig. 11. Gate Charge

0

2

4

6

8

10

0 40 80 120 160 200 240

QG - NanoCoulom bs

V

GS

- Volts

VDS

= 325V

I D = 60A

I G = 10mA

Fig. 12. Capacitance

1

10

100

1,000

10,000

100,000

1 10 100 1000

VDS - Volts

Capaci tance - PicoFar ad

s

f

= 1 MH

z

Ciss

Crss

Coss

Fig. 7. Maximum Drain Current v s. Case Temperature

0

20

40

60

80

100

120

140

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Am peres

Fig. 8. Input Admittance

0

20

40

60

80

100

120

140

160

180

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 9. Transconductance

0

20

40

60

80

100

120

140

160

180

200

0 20 40 60 80 100 120 140 160 180

I

D

- A m peres

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 10. Forward Voltage Drop of Intrinsic Diode

0

50

100

150

200

250

300

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

IXTK120N65X2

IXTX120N65X2

IXYS REF: T_120N65X2(X9-S602) 1-06-16

Fig. 15. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- K / W

Fig. 15. Maxim um Transient Thermal Impedance

aaaaa

0.3

Fig. 14. Forward-Bias Safe Operating Area

0.1

1

10

100

1000

10 100 1,000

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pul s e

25µs

100µs

R

DS(

on

)

Limi

t

1ms

10ms

Fig. 13. Output Capacitance Stored Energy

0

10

20

30

40

50

60

70

80

90

0 100 200 300 400 500 600

V

DS

- Volts

E

OSS

- MicroJoules

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