Features
x Low Frequency Power Amplifier.
x Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
2SD468
NPN Epitaxial
Silicon Transistor
Maximum Ratings
Symbol Rating Rating Unit
VCEO
Collector-Emitter Voltage 20 V
VCBO
Collector-Base Voltage 25 V
VEBO Emitter-Base Voltage 5.0 V
IC
Collector Current 1.0 A
PC
Collector power dissipation 0.9 W
TJJunction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
BVCBO Collector-Base Breakdown Voltage
(IC=10ӴAdc, IE=0) 20 --- --- Vdc
BVCEO Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0) 25 --- --- Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE=0.01mAdc, IC=0) 5.0 --- --- Vdc
ICBO Collector Cutoff Current
(VCB=20Vdc,IE=0) --- --- 1000 nAdc
IEBO Emitter Cutoff Current
(VEB=4.0Vdc, IC=0) --- --- 1000 nAdc
ON CHARACTERISTICS
hFE DC Current gain
(IC=500mAdc, VCE=2.0Vdc) 85 --- 240 ---
VBE(on) Base-Emitter On Voltage
(VCE=2.0Vdc, IC=500mAdc) --- --- 1.0 Vdc
VCE(sat) Collector-Emitter Saturation Voltage
(IC=0.8Adc, IB=80mAdc) --- --- 0.5 Vdc
fTCurrent Gain Bandwidth Product
(VCE=2.0Vdc, IC=500mAdc) --- 190 --- MHz
Cob Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) --- 22 --- pF
(1) hFE Classification B: 85~170, C: 120~240
TO-92L
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 1 2009/04/24
TM
Micro Commercial Components
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
www.mccsemi.com
1 of 4
x Complementary pair with 2SB562
BCE
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .146 .161
B .157 ---
D .014 .018
E .050 .062
F .185 .201
G .307 .323
H .543 .559
J .024 .031
K .014 .022
L .050
M .096 .104
3.700 4.10
4.000 - - -
C --- 0.063 --- 1.600
0.350 0.450
1.280 1.580
4.700 5.100
7.800 8.200
13.80 14.20
.600 .800
0.350 .550
1.270
2.440 2.640
DIMENSIONS