MPS-A20 (siurcon) MPS-K20, MPS-K21, MPS-K22 NPN SILICON ANNULAR TRANSISTORS ... designed for use in audio, radio, and television applications. @ MPS-K20, MPS-K21, MPS-K22 are 3, 6 andS Transistor Kits Available in Varied hee Ranges See Table 1 @ High Breakdown Voltage BVcEO @ 40 Vdc (Min) @ Ie = 1.0 mAdc @ tow Collector-Emitter Saturation Voltage VcE(sat) = 0.25 Vde (Max) @ Ig = 10 mAdc Low Output Capacitance Cob = 4.0 PF (Max) @ Vog = 10 Vde NPN SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Rating Symbo! Value Unit Caltector-Emitter Voltage VcEeo 40 Vde Emitter-Base Voltage Vea 4.0 Vde Collector Current Continuous Io 100 mAdc Total Power Dissipation @ Tg = 25C Pp 350 mw Derate above 25C 28 mw/?c Total Power Dissipation @ Tc * 25C Po 1.0 Watt Derate above 25C 8.0 mwc Operating and Storage Junction Ty.T stg -55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbo! Max Unit Thermal Resistance, Junction to Ambient | Rgjalt! 357 ciw Thermal Resistance, Junction to Case Resc 128 cw {1) Rig ja is measured with the device soldered into a typical printed circuit board. 997 Lo PLANE [tte oh i sears [ R a STYLE 1: "| PIN}. EMITTER 2. BASE 3. COLLECTOR | Piz 3 2 0 oF s { n et L n 1 CASE 29-02 T0-92MPS-A20, MPS-K20, MPS-K21, MPS-K22 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) BVog o Vdc tre = 1.0 mAdc, I, = 0) 40 - Emitter-Base Breakdown Voltage BVE BO Vdc (I, = 100 Adc, Ig = 0) 4.0 - Collector Cutoff Current lono nAdc Vop = 30 Vde, I, = 0) - 100 ON CHARACTERISTICS DC Current Gain (2) bop - (I, = 5.0 mAde, VQ, = 10 Vdc) 40 400 Collector-Emitter Saturation Voltage v CE(sat) - 0. 25 Vde (I, = 10 mAdc, I, = 1.0 mAdc) Cc B DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) fp MHz lg = 5,0 mAdc, Vp, = 10 Vdc, f= 100 MHz) 125 - Output Capacitance Cc b pF (Vop = 10 Vde, 1, = 0, f = 100 kHz) - 4.0 (2) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. FIGURE 1 SIMPLIFIED AC EQUIVALENT CIRCUIT (Common Emitter) BASE bh COLLECTOR o |. a 2 (hte + 1) te Ccb {Z W Imbe Sloe ASCo Note: Data for MPS-A20 is presented in terms of the equivalent circuit shown in Figure 1. Values for its components ma found or calculated as follows: lp See Figure 8 te = 26 mV/l_e Gm = 1/te 1 Gc = (hfe +4) Rob (See Figures 2 & 7) Ce" ar hte Co = 0.2 pF Low frequency h parameters may be found from: hie = fh + (hfe +1) re Nee = See Figure 2 fre = Negligible hge = (hte + 1) hay Cob = Cob 0.2 pF (See Figure 6) iy be hf, SMALL SIGNAL CURRENT GAIN 998 IH+-OD-+ FIGURE 2 SMALL SIGNAL CURRENT GAIN f= Ta = 25C Ic, COLLECTOR CURRENT {mAdc}MPS-A20, MPS-K20, MPS-K21, MPS-K22 (continued) FIGURE 3 NORMALIZED OC CURRENT GAIN FIGURE 4 SATURATION AND ON VOLTAGES z 3 @ic/ig= ia 5 = a z @VcE=10V oc o > > 3 iw 8 2 a - 0: N So a > = > zc 2 VcEtsat) @ic/te = 10 rd s 2.0 1920 ic, COLLECTOR CURRENT (mAde) Ic, COLLECTOR CURRENT (mAdc) FIGURE 5 CURRENT-GAIN~BANDWIDTH PRODUCT FIGURE 6 CAPACITANCES 2 = 6S 2 a oOo ~ = 5 E Voe= 10V 4 = Ta= 25C z S E z 2 % 2 z o < a S E =z z c z 3B F 05 07 10 20 30 50 7.0 10 20 30 ~=80 04 0.6 081.0 4.0 6.0 8.010 40 Ig, COLLECTOR CURRENT (mAdc) Vp, REVERSE VOLTAGE (VOLTS) FIGURE 7 OUTPUT ADMITTANCE FIGURE 8 BASE SPREADING RESISTANCE Vce=10 f= 1.0 kHz Ta = 25C th, BASE SPREADING RESISTANCE (GHMS) Nob, OUTPUT ADMITTANCE (umhos) 058 2.0 te, COLLECTOR CURRENT (mAdc) tc, COLLECTOR CURRENT imAdc} 999MPS-A20, MPS-K20, MPS-K21, MPS-K22 (continued) MPS-K20, MPS-K21 and MPS-K22are three, five and nine transistor kits consisting of MPS-A20s with various hg_ selections. Table 1 MPS-K20 Three Transistor Kit hee @ Ic = 5.0 mAdc, Voge = 10 Vie Quantity Per Kit Color Code Min Max 1 Red 40 400 1 White 80 400 1 Blue 120 300 MPS-K21 Five Transistor Kit hge @ Ig = 5.0 mAde, Veg = 10 Vde Quantity Per Kit Color Code Min Max 3 Red 40 400 1 Green 100 200 1 Yellow 4150 300 MPS-K22 Nine Transistor Kit hee @ Ic = 5.0 mAdc, Vcg = 10 Vide Quantity Per Kit Color Code Min Max 4 Red 40 400 2 White 80 400 2 Green 100 200 1 Yellow 150 300 1000