1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
PMV20XN
30 V, 4.8 A N-channel Trench MOSFET
Rev. 1 — 5 April 2011 Product data sheet
SOT23
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source
voltage Tj=25°C --30V
VGS gate-source
voltage -12 - 12 V
IDdrain current VGS =4.5V; T
amb =25°C [1] --4.8A
Static characteristics
RDSon drain-source
on-state
resistance
VGS =4.5V; I
D=4.8A;
Tj=25°C - 1925mΩ
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 2 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning info rmation
Pin Symbol Description Simplified outline Graphi c sy mbol
1 G gate
SOT23 (TO-236AB)
2Ssource
3 D drain
12
3
S
D
G
mbb076
Table 3. Orderi ng information
Type number Package
Name Description Version
PMV20XN TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
PMV20XN KW%
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 3 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj=25°C - 30 V
VGS gate-source voltage -12 12 V
IDdrain current VGS =4.5V; T
amb =25°C [1] -4.8A
VGS =4.5V; T
amb =100°C [1] -3A
IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 20 A
Ptot total power dissipation Tamb =25°C [2] - 510 mW
[1] - 930 mW
Tsp = 25 °C - 4170 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb =25°C [1] -1A
Fig 1. Normalized total power dissipation as a
function of junctio n temp erat u re Fig 2. Normalized continuous drain current as a
function of junction temp erat ure
Tj (°C)
−75 17512525 75−25
017aaa123
40
80
120
Pder
(%)
0
Tj (°C)
−75 17512525 75−25
017aaa124
40
80
120
Ider
(%)
0
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 4 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
IDM = single pul s e
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
017aaa176
1
10–1
10
102
ID
(A)
10–2
VDS (V)
10–1 102
101
(1)
(2)
(3)
(4)
(5)
Limit RDSon = VDS/ID
(6)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 207 245 K/W
[2] - 116 135 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 2030K/W
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 5 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa177
tp (s)
10–3 102103
10110–2 10–1
102
10
103
Zth(j-a)
(K/W)
1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
0.01
0
duty cycle = 1
017aaa178
tp (s)
10–3 102103
10110–2 10–1
102
10
103
Zth(j-a)
(K/W)
1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
duty cycle = 1
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 6 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=250µA; V
GS =0V; T
j=25°C 30--V
VGSth gate-source threshold
voltage ID=250µA; V
DS =V
GS; Tj= 25 °C 0.5 1 1.5 V
IDSS drain leakage current VDS =30V; V
GS =0V; T
j=25°C --1µA
VDS =30V; V
GS =0V; T
j=150°C --20µA
IGSS gate leakage current VGS =12V; V
DS =0V; T
j= 25 °C - - 100 nA
VGS =-12V; V
DS =0V; T
j= 25 °C - - 100 nA
RDSon drain-source on-state
resistance VGS =4.5V; I
D= 4.8 A; Tj= 25 °C - 19 25 mΩ
VGS =4.5V; I
D= 4.8 A; Tj=150°C - 3140mΩ
VGS =2.5V; I
D=4A; T
j= 25 °C - 26 35 mΩ
gfs forward
transconductance VDS =5V; I
D=3A; T
j=25°C - 8 - S
Dynamic character istics
QG(tot) total gate charge ID=3A; V
DS =15V; V
GS =4.5V;
Tj=25°C - 6.4 10 nC
QGS gate-source charge - 1.8 - nC
QGD gate-drain charge - 1.1 - nC
Ciss input capacitance VGS =0V; V
DS =15V; f=1MHz;
Tj=25°C - 585 - pF
Coss output capacitance - 110 - pF
Crss reverse transfer
capacitance -55-pF
td(on) turn-on delay time VDS =15V; V
GS =5.4V; R
G(ext) =6Ω;
Tj=25°C; I
D=4.8A -12-ns
trrise time - 27 - ns
td(off) turn-off delay time - 128 - ns
tffall time - 68 - ns
Source-drain diode
VSD source-drain voltage IS=1A; V
GS =0V; T
j= 25 °C - 0.75 1.2 V
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 7 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
Tj = 25 °C Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Outp ut characteristics: drain current as a
function of drain-source volta ge; typ ical values Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Tj = 25 °C
(1) VGS = 1.7 V
(2) VGS = 1.8 V
(3) VGS = 1.9 V
(4) VGS = 2.5 V
(5) VGS = 3.0 V
(6) VGS = 4.5 V
ID = 5.7 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values Fig 9. Dr ain-source on-state resistance as a function
of gate-source voltage; typical value s
VDS (V)
04312
017aaa179
10
5
15
20
ID
(A)
0
VGS = 2 V
4.5 V
2.5 V
1.8 V
1.4 V
1.6 V
017aaa180
10–4
10–5
10–3
ID
(A)
10–6
VGS (V)
0.0 2.01.50.5 1.0
(1) (3)(2)
017aaa181
ID (A)
220148
40
20
60
80
RDSon
(Ω)
0
(1) (3)(2)
(4)
(5)
(6)
VGS (V)
08624
017aaa182
40
20
60
80
RDSon
(mΩ)
0
(1)
(2)
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 8 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as
a function of junctio n temperature; typical
values
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
017aaa183
VGS (V)
0321
10
5
15
20
ID
(A)
0
(1)
(2)
(1) (2)
Tj (°C)
–60 180120060
017aaa184
1.0
1.4
1.8
a
0.6
Tj (°C)
–60 180120060
017aaa185
1.0
0.5
1.5
2.0
VGS(th)
(V)
0.0
(1)
(3)
(2)
017aaa186
VDS (V)
10–1 102
101
102
103
C
(pF)
10
(1)
(3)
(2)
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 9 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
ID = 3 A; VDS = 15 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values Fig 15. Gate charge waveform definitions
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a functio n of so urce-drain voltage; typical valu es
QG (nC)
08624
017aaa187
2
3
1
4
5
VGS
(V)
0
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
017aaa188
VSD (V)
0.0 1.20.80.4
2
1
3
4
IS
(A)
0
(1) (2)
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 10 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
8. Test information
Fig 17. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 11 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
9. Package outline
Fig 18. Package outline SOT23 (TO-236AB)
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 12 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
10. Soldering
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 13 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMV20XN v.1 20110405 Product data sheet - -
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 14 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The p r oduct status of device(s) described in this do cument may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extr act from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this d ocument is be lieved to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descripti ons, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors product s are not designed,
authorized or warranted to be suitable for use in life support , life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expect ed
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or application s and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference dat a i s an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associate d with t heir
applications and products.
NXP Semiconductors does not accept any liabil ity related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the appl ication or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contai ns data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
PMV20XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 April 2011 15 of 16
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
construed as an of fer to se ll product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) d escribed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors prod uct is automotive qualified,
the product is not suitable for automo tive use. It i s neit her qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product claims resulting f rom customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specif ications.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PMV20XN
30 V, 4.8 A N-channel Tre n ch MO SFET
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 April 2011
Document i dentifier: PMV20XN
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 4
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
13 Contact information. . . . . . . . . . . . . . . . . . . . . .15