©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
BUT11F/11AF
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Thermal Characteris ti cs TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BUT11F
: BUT11AF 850
1000 V
V
VCEO Collector-Emitter Voltage: BUT11F
: BUT11AF 400
450 V
V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 5 A
ICP *Collector Current (Pulse) 10 A
IB Base Current (DC) 2 A
IBP *Base Current (Pulse) 4 A
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Paramet e r Test Condit ion Min. Typ. Max. Uni ts
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BUT11F
: BUT11AF
IC = 100mA, IB = 0 400
450 V
V
ICES Collector Cut-off Current: BUT11F
: BUT11AF VCE = 850V, VBE = 0
VCE = 1000V, VBE = 0
1
1 mA
mA
IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA
VCE(sat) Collector-Emitter Saturation V oltage
: BUT11F
: BUT11AF
IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A 1.5
1.5 V
V
VBE(sat) Base-Emitter Saturation Voltage
: BUT11F
: BUT11AF IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A 1.3
1.3 V
V
tON Turn On Time V CC = 250V, IC = 2.5A
IB1 = -IB2 = 0.5A
RL = 100Ω
1 µs
tSTG Sto rage Time 4 µs
tF Fall Time 0.8 µs
Symbol Parameter Typ Max Units
RθjC Thermal Resistance, Junction to Case 3.125 °C/W
BUT11F/11AF
High Voltage Power Switching Applications
1
1.Base 2.Collector 3.Emitter
TO-220F
©2001 Fairchild Semiconductor Corporation
BUT11F/11AF
Rev. A2, August 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Biased Safe Operating Area
Figure 5. Safe Operating Area Figure 6. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 5 IB
VCE(sat)
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 5 IB
VBE(sat)
VBE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT 0 200 400 600 800 1000 1200
0
2
4
6
8
10
BUT11AF
BUT11F
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
0.01
0.1
1
10
DC
Ic MAX (Continuous)
BUT11AF
BUT11F
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[OC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
BUT11F/11AF
Dimensions in Millimeters
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.10
15.80
±0.20
15.87
±0.20
6.68
±0.20
9.75
±0.30
4.70
±0.20
10.16
±0.20
(1.00x45°)
2.54
±0.20
0.80
±0.10
9.40
±0.20
2.76
±0.20
0.35
±0.10
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
TO-220F
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
ACEx™
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DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
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BUT11AFTU Full Production $0.62 TO-220F 3 RAIL
* 1,000 piece Budgetary Pricing
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