SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications 1.60.05 * Low ON-resistance Q1 Nch: Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) 1.20.05 Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V DC ID 500 Pulse IDP 1000 Drain current mA 2 5 3 4 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 JEDEC - JEITA 2-2N1D Weight: 3.0 mg (typ.) Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS 8 V DC ID -330 Pulse IDP -660 Drain current ES6 TOSHIBA Q2 Absolute Maximum Ratings (Ta = 25C) Characteristics 6 0.120.05 Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics 1 0.550.05 Q2 Pch: Ron = 3.60 (max) (@VGS = -1.5 V) Ron = 2.70 (max) (@VGS = -1.8 V) Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) * 1.00.05 0.5 0.5 1.5-V drive 1.60.05 * 0.20.05 Unit: mm mA Absolute Maximum Ratings (Ta = 25 C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit PD(Note 1) 150 mW Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Drain power dissipation Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 0.135 mm x 6) Start of commercial production 2008-06 1 2014-11-14 SSM6L36FE Q1 Electrical Characteristics (Ta = 25C) Characteristics Drain-source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 V 20 V (BR) DSX ID = 1 mA, VGS = - 10 V 12 Unit V Drain cutoff current IDSS VDS =20 V, VGS = 0 V 1 A Gate leakage current IGSS VGS = 10 V, VDS = 0 V 1 A 0.35 1.0 V mS Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 200 mA (Note2) 420 840 ID = 200 mA, VGS = 5.0 V (Note2) 0.46 0.63 ID = 200 mA, VGS = 4.5 V (Note2) 0.51 0.66 ID = 200 mA, VGS = 2.5 V (Note2) 0.66 0.85 ID = 100 mA, VGS = 1.8 V (Note2) 0.81 1.14 ID = 50 mA, VGS = 1.5 V (Note2) 0.95 1.52 46 10.8 Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 7.3 Total Gate Charge Qg 1.23 Gate-Source Charge Qgs 0.60 Gate-Drain Charge Qgd 0.63 Switching time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 0.5 A, VGS = 4.0 V pF nC Turn-on time ton VDD = 10 V, ID = 200 mA 30 Turn-off time toff VGS = 0 to 2.5 V, RG = 50 75 -0.88 -1.2 V Min Typ. Max Unit Drain-source forward voltage VDSF ID = -0.5 A, VGS = 0 V (Note2) ns Q2 Electrical Characteristics (Ta = 25C) Characteristics Drain-source breakdown voltage Symbol Test Conditions V (BR) DSS ID = -1 mA, VGS = 0 V -20 V (BR) DSX ID = -1 mA, VGS = 8 V -12 V Drain cutoff current IDSS VDS = -16 V, VGS = 0 V -10 A Gate leakage current IGSS VGS = 8 V, VDS = 0 V 1 A Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -100 mA 190 mS Drain-source ON-resistance RDS (ON) (Note2) ID = -100 mA, VGS = -4.5 V (Note2) 0.95 1.31 ID = -80 mA, VGS = -2.8 V (Note2) 1.22 1.60 ID = -40 mA, VGS = -1.8 V (Note2) 1.80 2.70 ID = -30 mA, VGS = -1.5 V (Note2) 2.23 3.60 43 10.3 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 6.1 Qg 1.2 Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, IDS = -330mA, VGS = -4 V 0.85 0.35 Turn-on time ton VDD = -10 V, ID = -100 mA 90 Turn-off time toff VGS = 0 to -2.5 V, RG = 50 200 0.88 1.2 Drain-source forward voltage VDSF ID = 330 mA, VGS = 0 V (Note2) pF nC ns V Note 2: Pulse test 2 2014-11-14 SSM6L36FE Q1 Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V 90% OUT 2.5 V IN 0V 50 0 10% RL 10 s (c) VOUT VDD VDD = 10 V Duty 1% VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C VDD 10% 90% VDS (ON) tr tf ton toff Q2 Switching Time Test Circuit (a) Test Circuit (b) VIN 0V OUT 0 IN RL 10 s (c) VOUT VDD VDD = -10 V Duty 1% VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C Marking VDS (ON) 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 5 4 6 LL4 1 90% -2.5 V 50 -2.5V 6 10% 2 5 Q1 3 1 4 Q2 2 3 Q1 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of the SSM6L36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Q2 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for the Q2 of the SSM6L36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 3 2014-11-14 SSM6L36FE Q1 (N-ch MOSFET) ID - VDS 10 V 2.5 V 1.8 V (mA) 4.5 V 800 Drain current ID ID - VGS 1000 600 Drain current ID (mA) 1000 1.5 V 400 VGS = 1.2 V 200 0 Common Source Ta = 25 C 0 0.4 0.2 0.6 0.8 Drain-source voltage VDS 100 Ta = 100 C 10 1 -25 C 25 C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) RDS (ON) - VGS ID = 200mA Common Source Common Source Ta = 25C Drain-source ON-resistance RDS (ON) () Drain-source ON-resistance RDS (ON) () RDS (ON) - ID 3 2 25 C 1 Ta = 100 C -25 C 0 2 4 6 8 2 1.8 V 1.5 V 1 VGS = 4.5V 2.5V 0 10 0 Gate-source voltage VGS (V) Gate threshold voltage Vth (V) Drain-source ON-resistance RDS (ON) () 100m A / 1.8 V 200m A / 2.5 V 1.0 200m A / 4.5 V 200m A / 5.0 V 0.5 0 -50 0 50 100 600 Ambient temperature Ta (C) 1000 (mA) Common Source VDS = 3 V ID = 1 mA 0.5 0 -50 150 800 Vth - Ta 1.0 ID = 50m A / VGS = 1.5 V Common Source 400 200 Drain current ID RDS (ON) - Ta 1.5 3.0 Gate-source voltage VGS (V) 3 0 2.0 0 50 100 150 Ambient temperature Ta (C) 4 2014-11-14 SSM6L36FE |Yfs| - ID 10000 Common Source (mA) VDS = 3 V Ta = 25C 3000 1000 300 100 30 10 100 10 1 Drain current ID Common Source VGS = 0 V Ta =100 C D 1 -0.5 S -1.0 Drain-source voltage VDS 10 (ns) Switching time t 30 Coss Crss 5 Common Source Ta = 25C f = 1 MHz VGS = 0 V -1.5 (V) t - ID Common Source toff Ciss IDR G -25 C 1000 50 Capacitance C (pF) 25 C 10 (mA) C - VDS 1 0.1 100 0.1 0 1000 100 3 IDR - VDS 1000 Drain reverse current IDR Forward transfer admittance |Yfs| (mS) Q1 (N-ch MOSFET) VDD = 10 V VGS = 0 to 2.5 V Ta = 25 C RG = 4.7 tf 100 ton tr 1 10 Drain-source voltage VDS 10 100 (V) 1 10 100 Drain current ID 1000 (mA) Dynamic Input Characteristic 10 Gate-source voltage VGS (V) Common Source ID = 0.5 A Ta = 25C 8 6 VDD = 10 V VDD = 16 V 4 2 0 0 1 Total Gate Charge 2 3 Qg (nC) 5 2014-11-14 SSM6L36FE Q2 (P-ch MOSFET) ID - VDS -8V Common Source Ta = 25 C -4.5V -2.8V -2.5V -500 -1.8 V Drain current ID Drain current ID (mA) -600 ID - VGS -1000 (mA) -700 -400 -300 -1.5 V -200 VGS=-1.2 V -100 0 0 -1.0 -0.5 -100 Ta = 100 C -10 25 C -25 C -1 -0.1 -0.01 0 -1.5 Drain-source voltage VDS Common Source VDS = -3 V -1.0 (V) Gate-source voltage VGS (V) RDS (ON) - VGS 5 RDS (ON) - ID 5 ID =-100mA Common Source Ta = 25C 3 2 Ta = 25C Drain-source ON-resistance RDS (ON) () Drain-source ON-resistance RDS (ON) () Common Source 4 -2.0 25 C Ta = 100 C 1 4 3 -1.5 V -1.8 V 2 -2.8 V 1 VGS = -4.5 V - 25 C 0 0 -2 -6 -4 0 -8 0 Gate-source voltage VGS (V) RDS (ON) - Ta Common Source 4 -40mA / -1.8 V 3 -30mA / -1.5V -80mA / -2.8 V 2 1 0 -50 ID = -100mA / VGS = -4.5 V 0 50 -200 -400 -500 Drain current ID (mA) 100 Ambient temperature Ta (C) -600 -700 Common Source VDS = -3 V ID = -1 mA -0.5 0 -50 150 -300 Vth - Ta -1.0 Gate threshold voltage Vth (V) Drain-source ON-resistance RDS (ON) () 5 -100 0 50 100 150 Ambient temperature Ta (C) 6 2014-11-14 SSM6L36FE Q2 (P-ch MOSFET) |Yfs| - ID (mS) 1000 IDR - VDS 1000 Common Source VGS = 0 V (mA) Common Source VDS = -3 V Forward transfer admittance |Yfs| Ta = 25C Drain reverse current IDR 300 100 30 10 -100 -10 -1 Drain current ID S 10 Ta =100 C 25 C 1 -25 C 0.2 (mA) 0.4 0.8 (ns) Coss Crss 5 3 1 -0.1 Common Source Ta = 25C f = 1 MHz VGS = 0 V -1 -10 (V) VDD = -10 V VGS = 0 to -2.5 V Ta = 25 C RG = 50 1000 toff tf 100 ton tr 10 -100 Drain-source voltage VDS 1.2 Common Source Ciss 30 10 1.0 t - ID 10000 50 0.6 Drain-source voltage VDS Switching time t Capacitance C (pF) IDR G 0.1 0 -1000 C - VDS 100 D 100 -1 (V) -10 -100 Drain current ID -1000 (mA) Dynamic Input Characteristic Gate-source voltage VGS (V) -8 Common Source ID = -0.33 A Ta = 25C -6 VDD =-10V -4 VDD = - 16 V -2 0 0 1 Total Gate Charge 2 3 Qg (nC) 7 2014-11-14 SSM6L36FE Q1, Q2 Common PD* - Ta Drain power dissipation PD* (mW) 250 Mounted on FR4 board. (25.4mm x 25.4mm x 1.6mm , Cu Pad : 0.135 mm2 x 6) 200 150 100 150 0 -40 -20 *: Total Rating 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 8 2014-11-14 SSM6L36FE RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 9 2014-11-14