DS90CP22M-8/NOPB - Texas Instruments

DS90CP22

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SNLS053E –MARCH 2000–REVISED APRIL 2013

DS90CP22 800 Mbps 2x2 LVDS Crosspoint Switch

Check for Samples: DS90CP22

1FEATURES DESCRIPTION

DS90CP22 is a 2x2 crosspoint switch utilizing LVDS

2• DC - 800 Mbps Low Jitter, Low Skew Operation (Low Voltage Differential Signaling) technology for

• 65 ps (typ) of Pk-Pk Jitter with PRBS = 223−1low power, high speed operation. Data paths are fully

Data Pattern at 800 Mbps differential from input to output for low noise

• Single +3.3 V Supply generation and low pulse width distortion. The non-

blocking design allows connection of any input to any

• Less than 330 mW (typ) Total Power output or outputs. LVDS I/O enable high speed data

Dissipation transmission for point-to-point interconnects. This

• Non-Blocking "'Switch Architecture"' device can be used as a high speed differential

• Balanced Output Impedance crosspoint, 2:1 mux, 1:2 demux, repeater or 1:2

signal splitter. The mux and demux functions are

• Output Channel-to-Channel Skew is 35 ps (typ) useful for switching between primary and backup

• Configurable as 2:1 mux, 1:2 demux, Repeater circuits in fault tolerant systems. The 1:2 signal

or 1:2 Signal Splitter splitter and 2:1 mux functions are useful for

• LVDS Receiver Inputs Accept LVPECL Signals distribution of serial bus across several rack-mounted

backplanes.

• Fast Switch Time of 1.2ns (typ) The DS90CP22 accepts LVDS signal levels, LVPECL

• Fast Propagation Delay of 1.3ns (typ) levels directly or PECL with attenuation networks.

• Receiver Input Threshold < ±100 mV The individual LVDS outputs can be put into TRI-

• Available in 16 Lead TSSOP and SOIC STATE by use of the enable pins.

Packages

• Conforms to ANSI/TIA/EIA-644-1995 LVDS For more details, please refer to the Application

Information section of this datasheet.

Standard

• Operating Temperature: −40°C to +85°C

Connection Diagram

Figure 1. SOIC-16 Package

TSSOP-16 Package

1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

DS90CP22

SNLS053E –MARCH 2000–REVISED APRIL 2013

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Figure 2. Diff. Output Eye-Pattern in 1:2 split mode @ 800 Mbps

Conditions: 3.3 V, PRBS = 223−1 data pattern,

VID = 300mV, VCM = +1.2 V, 200 ps/div, 100 mV/div

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings(1)(2)

Supply Voltage (VCC)−0.3V to +4V

CMOS/TTL Input Voltage (EN0, EN1, SEL0, SEL1) −0.3V to (VCC + 0.3V)

LVDS Receiver Input Voltage (IN+, IN−)−0.3V to +4V

LVDS Driver Output Voltage (OUT+, OUT−)−0.3V to +4V

LVDS Output Short Circuit Current Continuous

Junction Temperature +150°C

Storage Temperature Range −65°C to +150°C

Lead Temperature (Soldering, 4 sec.) +260°C

Maximum Package Power Dissipation at 16L SOIC 1.435 W

25°C 16L SOIC Package Derating 11.48 mW/°C above +25°C

16L TSSOP 0.866 W

16L TSSOP Package Derating 9.6 mW/°C above +25°C

ESD Rating (HBM, 1.5kΩ, 100pF) > 5 kV

(EIAJ, 0Ω, 200pF) > 250 V

(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(2) “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be verified. They are not meant to imply that the

device should be operated at these limits. “Electrical Characteristics” provides conditions for actual device operation.

Recommended Operating Conditions Min Typ Max Units

Supply Voltage (VCC) 3.0 3.3 3.6 V

Receiver Input Voltage 0 VCC V

Operating Free Air Temperature -40 +25 +85 °C

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Electrical Characteristics(1)

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

CMOS/TTL DC SPECIFICATIONS (EN0,EN1,SEL0,SEL1)

VIH High Level Input Voltage 2.0 VCC V

VIL Low Level Input Voltage GND 0.8 V

IIH High Level Input Current VIN = 3.6V or 2.0V; VCC = 3.6V +7 +20 μA

IIL Low Level Input Current VIN = 0V or 0.8V; VCC = 3.6V ±1 ±10 μA

VCL Input Clamp Voltage ICL =−18 mA −0.8 −1.5 V

LVDS OUTPUT DC SPECIFICATIONS (OUT0,OUT1)

VOD Differential Output Voltage RL= 75Ω270 365 475 mV

RL= 75Ω, VCC = 3.3V, TA= 25°C 285 365 440 mV

ΔVOD Change in VOD between Complimentary Output States 35 mV

VOS Offset Voltage(2) 1.0 1.2 1.45 V

ΔVOS Change in VOS between Complimentary Output States 35 mV

IOZ Output TRI-STATE Current TRI-STATE Output, ±1 ±10 μA

VOUT = VCC or GND

IOFF Power-Off Leakage Current VCC = 0V; VOUT = 3.6V or GND ±1 ±10 μA

IOS Output Short Circuit Current VOUT+ OR VOUT−= 0V −15 −25 mA

IOSB Both Outputs Short Circuit Current VOUT+ AND VOUT−= 0V −30 −50 mA

LVDS RECEIVER DC SPECIFICATIONS (IN0,IN1)

VTH Differential Input High Threshold VCM = +0.05V or +1.2V or +3.25V, 0 +100 mV

VTL Differential Input Low Threshold Vcc = 3.3V −100 0 mV

VCMR Common Mode Voltage Range VID = 100mV, Vcc = 3.3V 0.05 3.25 V

IIN VIN = +3.0V, VCC = 3.6V or 0V ±1 ±10 μA

Input Current VIN = 0V, VCC = 3.6V or 0V ±1 ±10 μA

SUPPLY CURRENT

ICCD Total Supply Current RL= 75Ω, CL= 5 pF, EN0 = EN1 = High 98 125 mA

ICCZ TRI-STATE Supply Current EN0 = EN1 = Low 43 55 mA

(1) All typical are given for VCC = +3.3V and TA= +25°C, unless otherwise stated.

(2) VOS is defined and measured on the ATE as (VOH + VOL) / 2.

AC Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified(1)

Symbol Parameter Conditions Min Typ Max Units

TSET Input to SEL Setup Time(2), (Figure 3 and Figure 4) 0.7 0.5 ns

THOLD Input to SEL Setup Time(2), (Figure 3 and Figure 4) 1.0 0.5 ns

TSWITCH SEL to Switched Output, (Figure 3 and Figure 4) 0.9 1.2 1.7 ns

TPHZ Disable Time (Active to TRI-STATE) High to Z, Figure 5 2.1 4.0 ns

TPLZ Disable Time (Active to TRI-STATE) Low to Z, Figure 5 3.0 4.5 ns

TPZH Enable Time (TRI-STATE to Active) Z to High, Figure 5 25.5 55.0 ns

TPZL Enable Time (TRI-STATE to Active) Z to Low, Figure 5 25.5 55.0 ns

TLHT Output Low-to-High Transition Time, 20% to 80%, Figure 7 290 400 580 ps

THLT Output High-to-Low Transition Time, 80% to 20%, Figure 7 290 400 580 ps

(1) The parameters are specified by design. The limits are based on statistical analysis of the device performance over PVT (process,

voltage and temperature) range.

(2) TSET and THOLD time specify that data must be in a stable state before and after the SEL transition.

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AC Electrical Characteristics (continued)

Over recommended operating supply and temperature ranges unless otherwise specified(1)

Symbol Parameter Conditions Min Typ Max Units

TJIT VID = 300mV; 50% Duty Cycle; VCM =40 90 ps

1.2V at 800Mbps

LVDS Data Path Peak to Peak Jitter(3) VID = 300mV; PRBS=223-1 data 65 120 ps

pattern; VCM = 1.2V at 800Mbps

TPLHD Propagation Low to High Delay, Figure 8 0.9 1.3 1.6 ns

Propagation Low to High Delay, Figure 8 VCC = 3.3V, TA= 25°C 1.0 1.3 1.5 ns

TPHLD Propagation High to Low Delay, Figure 8 0.9 1.3 1.6 ns

Propagation High to Low Delay, Figure 8 VCC = 3.3V, TA= 25°C 1.0 1.3 1.5 ns

TSKEW Pulse Skew |TPLHD - TPHLD| 0 225 ps

TCCS Output Channel-to-Channel Skew, Figure 9 35 80 ps

(3) The parameters are specified by design. The limits are based on statistical analysis of the device performance over PVT range with the

following equipment test setup: HP70004A (display mainframe) with HP70841B (pattern generator), 5 feet of RG-142 cable with DUT

test board and HP83480A (digital scope mainframe) with HP83483A (20GHz scope module).

AC Timing Diagrams

Figure 3. Input-to-Select rising edge setup and hold times and mux switch time

Figure 4. Input-to-Select falling edge setup and hold times and mux switch time

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SNLS053E –MARCH 2000–REVISED APRIL 2013

Figure 5. Output active to TRI-STATE and TRI-STATE to active output time

Figure 6. LVDS Output Load

Figure 7. LVDS Output Transition Time

Figure 8. Propagation Delay Low-to-High and High-to-Low

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Figure 9. Output Channel-to-Channel Skew in 1:2 splitter mode

PIN DESCRIPTIONS

Pin Name # of Pin Input/Output Description

IN+ 2 I Non-inverting LVDS input

IN - 2 I Inverting LVDS input

OUT+ 2 O Non-inverting LVDS Output

OUT - 2 O Inverting LVDS Output

A logic low on the Enable puts the LVDS output into TRI-STATE and

EN 2 I reduces the supply current

SEL 2 I 2:1 mux input select

GND 1 P Ground

VCC 1 P Power Supply

NC 2 No Connect

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SNLS053E –MARCH 2000–REVISED APRIL 2013

APPLICATION INFORMATION

MODES OF OPERATION

The DS90CP22 provides three modes of operation. In the 1:2 splitter mode, the two outputs are copies of the

same single input. This is useful for distribution / fan-out applications. In the repeater mode, the device operates

as a 2 channel LVDS buffer. Repeating the signal restores the LVDS amplitude, allowing it to drive another

media segment. This allows for isolation of segments or long distance applications. The switch mode provides a

crosspoint function. This can be used in a system when primary and redundant paths are supported in fault

tolerant applications.

INPUT FAIL-SAFE

The receiver inputs of the DS90CP22 do not have internal fail-safe biasing. For point-to-point and multidrop

applications with a single source, fail-safe biasing may not be required. When the driver is off, the link is in-

active. If fail-safe biasing is required, this can be accomplished with external high value resistors. The IN+ should

be pull to Vcc with 10kΩand the IN−should be pull to Gnd with 10kΩ. This provides a slight positive differential

bias, and sets a known HIGH state on the link with a minimum amount of distortion.

UNUSED LVDS INPUTS

Unused LVDS Receiver inputs should be tied off to prevent the high-speed sensitive input stage from picking up

noise signals. The open input to IN+ should be pull to Vcc with 10kΩand the open input to IN−should be pull to

Gnd with 10kΩ.

UNUSED CONTROL INPUTS

The SEL and EN control input pins have internal pull down devices. Unused pins may be tied off or left as no-

connect (if a LOW state is desired).

EXPANDING THE NUMBER OF OUTPUT PORTS

To expand the number of output ports, more than one DS90CP22 can be used. Total propagation delay through

the devices should be considered to determine the maximum expansion. For example, if 2 X 4 is desired, than

three of the DS90CP22 are required. A minimum of two device propagation delays (2 x 1.3ns = 2.6ns (typ)) can

be achieved. For a 2 X 8, a total of 7 devices must be used with propagation delay of 3 x 1.3ns = 3.9ns (typ).

The power consumption will increase proportional to the number of devices used.

PCB LAYOUT AND POWER SYSTEM BYPASS

Circuit board layout and stack-up for the DS90CP22 should be designed to provide noise-free power to the

device. Good layout practice also will separate high frequency or high level inputs and outputs to minimize

unwanted stray noise pickup, feedback and interference. Power system performance may be greatly improved by

using thin dielectrics (4 to 10 mils) for power/ground sandwiches. This increases the intrinsic capacitance of the

PCB power system which improves power supply filtering, especially at high frequencies, and makes the value

and placement of external bypass capacitors less critical. External bypass capacitors should include both RF

ceramic and tantalum electrolytic types. RF capacitors may use values in the range 0.01 µF to 0.1 µF. It is

recommended practice to use two vias at each power pin of the DS90CP22 as well as all RF bypass capacitor

terminals. Dual vias reduce the interconnect inductance by up to half, thereby reducing interconnect inductance

and extending the effective frequency range of the bypass components.

The outer layers of the PCB may be flooded with additional ground plane. These planes will improve shielding

and isolation as well as increase the intrinsic capacitance of the power supply plane system. Naturally, to be

effective, these planes must be tied to the ground supply plane at frequent intervals with vias. Frequent via

placement also improves signal integrity on signal transmission lines by providing short paths for image currents

which reduces signal distortion.

There are more common practices which should be followed when designing PCBs for LVDS signaling.

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COMPATIBILITY WITH LVDS STANDARD

The DS90CP22 is compatible with LVDS and Bus LVDS Interface devices. It is enhanced over standard LVDS

drivers in that it is able to driver lower impedance loads with standard LVDS levels. Standard LVDS drivers

provide 330mV differential output with a 100Ωload. The DS90CP22 provides 365mV with a 75Ωload or 400mV

with 100Ωloads. This extra drive capability is useful in certain multidrop applications.

In backplane multidrop configurations, with closely spaced loads, the effective differential impedance of the line is

reduced. If the mainline has been designed for 100Ωdifferential impedance, the loading effects may reduce this

to the 70Ωrange depending upon spacing and capacitance load. Terminating the line with a 75Ωload is a better

match than with 100Ωand reflections are reduced.

BLOCK DIAGRAM

Table 1. Function Table

SEL0 SEL1 OUT0 OUT1 Mode

0 0 IN0 IN0 1:2 splitter

0 1 IN0 IN1 repeater

1 0 IN1 IN0 switch

1 1 IN1 IN1 1:2 splitter

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SNLS053E –MARCH 2000–REVISED APRIL 2013

Typical Performance Characteristics

Diff. Output Voltage (VOD) vs. Resistive Load (RT) Peak-to-Peak Output Jitter at VCM = +0.4V vs. VID

Figure 10. Figure 11.

Peak-to-Peak Output Jitter at VCM = +1.2V vs. VID Peak-to-Peak Output Jitter at VCM = +1.6V vs. VID

Figure 12. Figure 13.

Product Folder Links: DS90CP22

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SNLS053E –MARCH 2000–REVISED APRIL 2013

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REVISION HISTORY

Changes from Revision D (April 2013) to Revision E Page

• Changed layout of National Data Sheet to TI format ............................................................................................................ 9

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PACKAGE OPTION ADDENDUM

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Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

DS90CP22M-8 NRND SOIC D 16 48 TBD Call TI Call TI -40 to 85 DS90CP22M

-8

DS90CP22M-8/NOPB ACTIVE SOIC D 16 48 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS90CP22M

-8

DS90CP22MT NRND TSSOP PW 16 92 TBD Call TI Call TI -40 to 85 DS90CP

22MT

DS90CP22MT/NOPB ACTIVE TSSOP PW 16 92 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS90CP

22MT

DS90CP22MTX/NOPB ACTIVE TSSOP PW 16 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS90CP

22MT

DS90CP22MX-8/NOPB ACTIVE SOIC D 16 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS90CP22M

-8

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

PACKAGE OPTION ADDENDUM

www.ti.com 1-Nov-2013

Addendum-Page 2

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

DS90CP22MTX/NOPB TSSOP PW 16 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1

DS90CP22MX-8/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 6-Nov-2015

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

DS90CP22MTX/NOPB TSSOP PW 16 2500 367.0 367.0 35.0

DS90CP22MX-8/NOPB SOIC D 16 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 6-Nov-2015

Pack Materials-Page 2

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