BC847BVN,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2001 Aug 30 2001 Nov 07

DISCRETE SEMICONDUCTORS

BC847BVN

NPN/PNP general purpose

transistor

M3D74

2001 Nov 07 2

NXP Semiconductors Product data sheet

NPN/PNP general purpose transistor BC847BVN

FEATURES

•300 mW total powe r dissipation

•Very small 1.6 mm x 1.2 mm ultra thin package

•Excellent coplanarity due to s tr aight leads

•Replaces two SC-75/SC -89 packaged transisto rs on

same PCB area

•Reduced required PCB area

•Reduced pick and place costs.

APPLICATIONS

•General purpose switc hing and amplification

•Switch mode power supply complementary MOSFET

driver

•Complementary driver for audio a m plifiers.

DESCRIPTION

NPN/PNP transistor pair in a SOT666 plastic package.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BC847BVN 13

PIN DESCRIPTION

1, 4 emitter TR1; TR2

2, 5 base TR1; TR2

6, 3 collector TR1; TR2

handbook, halfpage

MAM443 132

TR1 TR2

123

46 5

Top view

Fig.1 Simplified outline (SOT666) and sym bol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed- circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

VCBO collector-base volta ge open emitter −50 V

VCEO collector-emitter voltage open base −45 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW

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NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC847BVN

THERMAL CHARACTE RISTICS

Notes

1. Transistor mounted on an FR4 printed- circuit board.

2. The only recommended soldering is reflow soldering.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient notes 1 and 2 416 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO collector-base cut-off current VCB = 30 V; IE = 0 −−15 nA

VCB = 30 V; IE = 0; Tj = 150 °C−−5μA

IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−100 nA

hFE DC current gain VCE = 5 V; IC = 2 mA 200 −450

VCEsat collector-emitter saturation

voltage IC = 10 mA; IB = 0.5 mA −−100 mV

IC = 100 mA; IB = 5 mA; note 1 −−300 mV

VBEsat collector-emitter saturation

voltage IC = 10 mA; IB = 0.5 mA −755 −mV

fTtransition frequen c y IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz

NPN transistor

VBE base-emitter turn-on voltage VCE = 5 V; IC = 2 mA 580 655 700 mV

Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1MHz −−1.5 pF

Ceemitter cap a citance VEB = 500 mV; IC = Ic = 0; f = 1MHz −11 −pF

PNP transistor

VBE base-emitter turn-on voltage VCE = −5 V; IC = −2 mA 600 655 750 mV

Cccollector capacitance VCB = −10 V; IC = Ic = 0; f = 1MHz −−2.2 pF

Ceemitter cap a citance VEB = −500 mV; IE = Ie = 0; f = 1MHz −10 −pF

2001 Nov 07 4

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC847BVN

handbook, halfpage

400

600

200

MLD703

10−1110 I

(mA)

hFE

102103

(1)

(3)

(2)

Fig.2 DC current gain as a fu nction of collector

current: ty pical values.

TR1 (NPN); VCE = 5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MLD704

10−210−11IC (mA)

VBE

10 102103

(3)

(2)

(1)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

TR1 (NPN); VCE = 5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

104

103

102

MLD705

10−1110 IC (mA)

VCEsat

(mV)

102103

(2)

(1)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current: typical values.

TR1 (NPN); IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MLD706

110−1IC (mA)

VBEsat

(mV)

10 102103

(1)

(3)

(2)

Fig.5 Base-emitter saturation v oltage as a

function of collector current.

TR1 (NPN); IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2001 Nov 07 5

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC847BVN

handbook, halfpage

1000

200

400

600

800

MLD699

−10−2−10−1

(1)

−1IC (mA)

hFE

−10 −102−103

(2)

(3)

Fig.6 DC current gain as a fu nction of collector

current: ty pical values.

TR2 (PNP); VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD700

−10−2−10−1

(1)

−1IC (mA)

VBE

−10 −102−103

(3)

(2)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

TR2 (PNP); VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLD701

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current: typical values.

TR2 (PNP); IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD702

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.9 Base-emitter saturation v oltage as a

function of collector current.

TR2 (PNP); IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2001 Nov 07 6

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC847BVN

PACKAGE OUTLINE

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

01-01-04

01-08-27

IEC JEDEC EIAJ

mm 0.27

0.17 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface mounted package; 6 leads SOT66

wMA

2001 Nov 07 7

NXP Semiconductors Pr oduct data shee t

NPN/PNP general purpose transistor BC847BVN

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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extract of th e product data given in the Limiting values an d

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This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document orde r number: 9397 750 09039