4
Symbol Parameter Value Units
VCEO Collec t or-Emitter V ol tage 60 V
VCBO Collec t or-Bas e Voltage 60 V
VEBO Emi tter-Base Volt age 5.0 V
ICCollect or Current - Cont i nuous 600 mA
TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FFB2907A FMB2907A MMPQ2907A
PDTotal Device Dissipation
Derate above 25°C300
2.4 700
5.6 1,000
8.0 mW
mW/°C
RθJA Thermal Res i stance, J unction to Ambient
Effective 4 Die
Each Die
415 180 125
240
°C/W
°C/W
°C/W
FFB2907A
SC70-6
Mark: .2F
C1
B2 E2
E1 B1 C2
pin #1
FMB2907A
SuperSOT-6
Mark: .2F
Dot denotes pin #1
C1
E1 C2
B1 E2 B2
pin #1
MMPQ2907A
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
SOIC-16
Mark:
MMPQ2907A C1C1C2C2C3C3C4C4
E1 B1E2 B2E3 B3E4B4
pin #1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
FFB2907A / FMB2907A / MMPQ2907A
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 T r=1 1 1.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 50 mA, V CE = 20 V,
f = 100 MHz 250 MHz
Cobo Output Capacitanc e VCB = 10 V, IE = 0,
f = 100 kHz 6.0 pF
Cibo Input Capacitance VEB = 2.0 V, IC = 0,
f = 100 kHz 12 pF
SWITCHING CHARACTERISTICS
ton Turn-on Time VCC = 30 V, IC = 150 m A, 30 ns
tdDelay Tim e IB1 = 15 mA 8.0 ns
trRise Ti me 20 ns
toff Turn-off Time VCC = 6.0 V, IC = 150 mA 80 ns
tsStorage Tim e IB1 = IB2 = 15 mA 60 ns
tfFall Time 20 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Conditions Min Typ Max Units
V(BR)CEO Collector-Em i tter Breakdown
Voltage* IC = 10 mA, IB = 0 60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-B ase Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IBBase Cutoff Current VCB = 30 V, VEB = 0. 5 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nA
ICBO Collector Cutoff Current VCB = 50 V, I E = 0
VCB = 50 V, I E = 0, T A = 125°C0.02
20 µA
µA
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA , VCE = 10 V
IC = 10 mA, V CE = 10 V
IC = 150 mA, V CE = 10 V*
IC = 500 mA, V CE = 10 V*
75
100
100
100
50 300
VCE(sat)Collector-Emitter Saturat i on Voltage* IC = 150 mA , IB = 15 mA
IC = 500 mA, IB = 50 mA 0.4
1.6 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, I B = 15 mA*
IC = 500 mA, IB = 50 mA 1.3
2.6 V
V
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB2907A / FMB2907A / MMPQ2907A
4
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICA L PULSED CURRENT G AIN
C
FE
125 °C
25 °C
- 4 0 ° C
V = 5 V
CE
Input and Output Capacitance
vs Reverse Bias V oltage
0.1 1 10 50
0
4
8
12
16
20
REVERSE BIAS VOL T AGE (V)
CAP ACIT ANCE (pF)
Cob
C
ib
C o llector -C u toff Cu r rent
vs A mb ient Temper ature
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE N T TEM P E RATURE ( C)
I - COLLECTOR CURR EN T (nA)
A
CBO
°
V = 35V
CB
C o ll ecto r -Emitter Satur ati o n
Vo ltag e vs C ollector Cu rrent
110100500
0
0.1
0.2
0.3
0.4
0.5
I - C OLL ECTOR C URRENT (mA)
V - COLLECTOR EMI TTER VOLTA GE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
B ase-Emitter Satur ati o n
Vo ltag e vs C o llector Current
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CURRE NT (mA)
V - BASE EM ITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 10
Base Emitter ON Voltage vs
C o ll ector Cu rrent
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CURRENT (mA)
V - BASE EMITTER ON VOLTA GE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40 °C
125 °C
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB2907A / FMB2907A / MMPQ2907A
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
S wit c hing Tim es
vs Collector Current
10 100 1000
0
50
100
150
200
250
I - COLL ECTOR CU RRENT (mA)
TIME ( nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 15 V
cc
tf
td
Tu r n On and Turn O ff Times
vs Col lector C urre n t
10 100 1000
0
100
200
300
400
500
I - CO LL ECT OR CURR ENT ( mA )
TIME ( nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 15 V
cc
Ri se Time vs Coll ect or
and Turn On Base Currents
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I - TURN 0N BASE CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
Power Dissipatio n vs
Amb ient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPE RATURE ( C)
P - POWER DISSIPATION (W)
°
D
SOIC-16
SOT-6
SC70-6
4
Typical Common Emitter Characteristics (f = 1.0kHz)
Commo n Em i t te r Characteristics
12 51020 50
0.1
0.2
0.5
1
2
5
I - COLLECTOR CURRENT (mA)
CHAR. R EL ATIVE TO VALUES AT I = - 10 m A
V = -10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
_ _ _ _ _ _
Common Emit te r Characte ri st ics
-20-16-12-8-4
0.8
0.9
1
1.1
1.2
1.3
V - CO LLECTO R VOLTA GE (V)
CHAR . REL ATI V E TO VALUES AT V = -1 0V
I = -10mA
C
CE
CE
T = 25 C
A o
hoe
h and h
re
hfe
hie
oe hfe
hie
h re
Commo n Emitte r Charact eristics
-40 -20 0 20 40 60 80 100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIEN T TE MPERATU RE ( C )
CHAR. REL ATIVE TO VALUES AT T = 25 C
V = -10 V
CE
A
A
hoe
h re
hfe
hie
o
o
I = -10 mA
C hfe
hie
h re
hoe
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB2907A / FMB2907A / MMPQ2907A
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated T urn-Off Switching T ime T est Circuit
1.0 KΩΩ
ΩΩ
Ω
- 6.0 V
1.5 V
1.0 KΩΩ
ΩΩ
Ω
- 30 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
- 16 V
0
50 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
1 KΩΩ
ΩΩ
Ω37 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
- 30 V
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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