© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G
• Blocking Voltage to 800 V
• On-State Current Rating of 16 Amperes RMS at 25°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1000 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 8.5 A/ms minimum at 125°C
• These are Pb−Free Devices
Features
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Description
BTB16-600CW3G, BTB16-800CW3G
Functional Diagram
MT1
G
MT2
Pb
Additional Information
Samples
Resources
Datasheet
Pin Out
CASE 221A
STYLE 4
12
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
BTB16−600CW3G
BTB16−800CW3G
VDRM,
VRRM 600
800
V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 16 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC= 25°C) ITSM 170 A
Circuit Fusing Consideration (t = 8.3 ms) I2t144 A²sec
Non−Repetitive Surge Peak Off−State Voltage
(TJ = 25°C, t = 10 ms)
VDSM/ VRSM VDSM/ VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 W
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 20 W
Average Gate Power (TJ = 125°C) PG(AV) 1. 0 W
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient
R8JC
R8JA
1. 9
60
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds TL260 °C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
Peak Repetitive Blocking Current TJ = 25°C
(VD = VDRM = VRRM; Gate Open)
TJ = 110°C
IDRM,
IRRM
- - 0.005
mA
- - 2.0
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Characteristic Symbol Min Typ Max Unit
Forward On-State Voltage (Note 2) (ITM = ±17 A Peak) VTM − − 1.55 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 Ω) MT2(+), G(+)
IGT
2.0 − 35
mA
MT2(+), G(−) 2.0 − 35
MT2(−), G(−) 2.0 − 35
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA) IH− − 50 mA
Latching Current (VD = 12 V, IG = = 1.2 x IGT)
MT2(+), G(+)
IL
− − 60
mA
MT2(+), G(−) − − 65
MT2(−), G(−) − − 60
Gate Trigger Voltage (VD = 12 V, RL = 33 Ω)
MT2(+), G(+)
VGT
0.5 − 1. 7
VMT2(+), G(−) 0.5 − 1. 1
MT2(−), G(−) 0.5 − 1. 1
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
VGD
0.2 − −
VMT2(+), G(−) 0.2 − −
MT2(−), G(−) 0.2 − −
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G
Voltage Current Characteristic of SCR
Quadrant Definitions for a Triac
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
Dynamic Characteristics
Characteristic Symbol Min Typ Max Unit
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber) (dI/dt)c 8.5 − − A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/µs
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 1000 − − V/µs
+C urrent
+V oltage
VTM
IH
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 VTM
IH
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
VItnardauQIIItnardauQ
ItnardauQIItnardauQ
IGT +I GT
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G
Figure 4. Thermal Response
Figure 5. Typical Hold Current Variation
Figure 3. On−State Characteristics
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.1
0.01 4
10001001010.1
IT(RMS)
125
120
115
110
105
100
95
90
85
80
TC, CASE TEMPERATURE (C )°
60°
90°
120°
180°
30°
75
70
DC
Figure 1. Typical RMS Current Derating Figure 2. On-State Power Dissipation
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G
Figure 6. Typical Gate Trigger Current Variation Figure 7. Typical Gate Trigger Voltage Variation
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
CL
51
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM
, 60 Hz VAC
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform) Figure 9. Critical Rate of Rise of CommutatingVoltage
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
010000100010010
µ
VD = 800 Vpk
TJ = 125°C
(di/dt)
c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
ITM
tw
VDRM
(di/dt)
c = 6f ITM
1000
f = 1
2 tw
TJ = 125°C 100°C 75°C
10
100
10
1
(dv/dt) , CRITICAL RATE OF RISE OF
(V/s )µ
c
COMMUTATING VOLTAGE
20 30 40 50 60 70 80 90 100
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTB16-600BW3G, BTB16-800BW3G
Dimensions Part Marking System
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Dim
Inches Millimeters
Min Max Min Max
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1. 1 5 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1. 1 5 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1. 15 −−−
Z −−− 0.080 −−− 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
12 3
4
SEATING
PLANE
S
R
J
U
TC
Pin Assignment
1Main Terminal 1
2Main Terminal 2
3 Gate
4Main Terminal 2
Ordering Information
Device Package Shipping
BTB16−600CW3G TO-220AB
(Pb-Free) 50 Units / Rail
BTB16−800CW3G TO-220AB
(Pb-Free) 50 Units / Rail
TO 220AB
1
x= 6 or 8
A= Assembly Location
Y= Year
WW = Work Week
G= Pb Free Package
23
4
BTB16 xCWG
AYWW
CASE 221A−07
ISSUE AA
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test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
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