Data Sheet BTS50055-1TMA Smart Highside High Current Power Switch Features Reversave Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio * Overload protection * Current limitation * Short circuit protection * Over temperature protection * Over voltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Reversave (Reverse battery protection) * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection 2) * Electrostatic discharge (ESD) protection * Green product (RoHS compliant) * AEC qualified Vbb(AZ) 62 VON(CL) 42 Vbb(on) 5.0 ... 34 RON IL(ISO) IL(SC) IL : IIS V V V 6.0 m 70 A 130 A 14 000 PG-TO220-7-4 Application * Power switch with current sense diagnostic feedback for 12 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits 7 1 SMD General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 4 & Tab R Voltage source Voltage sensor Overvoltage Current Gate protection limit protection Charge pump Level shifter Rectifier 3 IN Logic ESD I IN Limit for unclamped ind. loads Output Voltage detection + V bb bb OUT 1,2,6,7 IL Current Sense Load Temperature sensor IS PROFET I IS Load GND 5 VIN V IS R IS Logic GND 1 ) 2) With additional external diode. Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG Page 1of 18 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Pin Symbol Function 1 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with 3 each other especially in high current applications. ) 2 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) 3 IN I Input; has an internal pull up; activates the power switch in case of short to ground 4 Vbb + Supply voltage; positive power supply voltage; tab and pin 4 are internally 4 shorted; in high current applications use the tab ). 5 IS S Sense Output; Diagnostic feedback; provides a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) 6 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) 7 OUT O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with each other especially in high current applications. 3) Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (over voltage protection see page 4) Supply voltage for short circuit protection, Tj,start =-40 ...+150C: (see diagram on page 10) Load current (short circuit current, see page 5) Load dump protection VLoadDump = VA + Vs, VA = 13.5 V 5 RI ) = 2 , RL = 0.54 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 7.5 mH, 0 , see diagrams on page 10 Electrostatic discharge capability (ESD) Symbol Vbb Vbb Values 42 34 Unit V V self-limited A 75 V Tj Tstg Ptot -40 ...+150 -55 ...+150 170 C EAS 1.5 J 4 kV +15 , -250 +15 , -250 mA IL VLoad dump6) VESD W Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k Current through input pin (DC) Current through current sense status pin (DC) IIN IIS see internal circuit diagrams on page 8 and 9 3) 4) 5) 6) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.7 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Infineon Technologies AG Page 2 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Thermal Characteristics Parameter and Conditions Symbol 7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB 8): Thermal resistance min ---- Values typ max -- 0.75 60 -33 40 Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see measurement circuit page 7) IL = 20 A, Tj = 25 C: RON VIN = 0, IL = 20 A, Tj = 150 C: 9 IL = 90 A, Tj = 150 C: ), IL = 20 A, Tj = 150 C: Vbb = 6V Nominal load current 10) (Tab to pins 1, 2, 6, 7) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 11) Nominal load current 10), device on PCB 8) TA = 85 C, Tj 150 C VON 0.5 V, Maximum load current in resistive range (Tab to pins 1, 2, 6, 7) VON = 1.8 V, Tc = 25 C: see diagram on page 13 VON = 1.8 V, Tc = 150 C: 12) Turn-on time IIN to 90% VOUT: to 10% VOUT: Turn-off time IIN RL = 1 , Tj =-40...+150C Slew rate on 12) (10 to 30% VOUT ) RL = 1 , TJ = 25 C Slew rate off 12) (70 to 40% VOUT ) RL = 1 , TJ = 25 C Values min typ max 6.0 10.5 10.7 17 -- m -55 4.4 7.9 -10 70 IL(NOM) 13.6 17 -- A IL(Max) 250 150 80 30 ----- --400 110 dV/dton -- 0.7 -- V/s -dV/dtoff -- 1.1 -- V/s RON(Static) IL(ISO) ton toff -- Unit A A s 7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. 9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 C. 10) not subject to production test, specified by design 11) TJ is about 105C under these conditions. 12) See timing diagram on page 14. ) 8 Infineon Technologies AG Page 3 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Inverse Load Current Operation On-state resistance (Pins 1, 2, 6, 7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 C: RON(inv) see diagram on page 10 Tj = 150 C: Nominal inverse load current (Pins 1, 2, 6, 7 to Tab) IL(inv) 11 VON = -0.5 V, Tc = 85 C -VON Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150C Values min typ max -- Unit 6.0 10.5 -- m 55 4.4 7.9 70 -- 0.6 -- V Vbb(on) VbIN(u) 5.0 1.5 -3.0 34 4.5 V V VbIN(ucp) VZ,IN 3.0 60 62 --- 4.5 -66 15 25 6.0 --25 50 V V A Operating Parameters Operating voltage (VIN = 0V) 13) 14 Under voltage shutdown ) Under voltage start of charge pump see diagram page 15 Over voltage protection 15) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0 Tj = 150C: Ibb(off) A ) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u). bb For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and short circuit. 14) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 9. 13 Infineon Technologies AG Page 4 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Protection Functions 16) Short circuit current limit (Tab to pins 1, 2, 6, 7) VON = 12 V, time until shutdown max. 350 s Tc =-40C: Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) --65 110 130 115 td(SC) 80 -- 350 s 14 16.5 20 V VON(CL) 39 42 47 V VON(SC) Tjt Tjt -150 -- 6 -10 ---- V C K -- -- 16 V -- 5.4 8.9 7.0 12.3 m -- 120 -- IL= 40 mA: -VOUT(CL) -180 -- Unit IL(SC) IL(SC) IL(SC) min. value valid only if input "off-signal" time exceeds 30 s Output clamp 17) (inductive load switch off) Values min typ max A see diagram Ind. and overvolt. output clamp page 8 Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. over voltage) IL= 40 mA Short circuit shutdown detection voltage (pin 4 to pins 1,2,6,7) Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage 18) -Vbb On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line Rbb 16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9. Infineon Technologies AG Page 5 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS,19 VON < 1.5 V ), VIS <VOUT - 5V, VbIN > 4.0 V see diagram on page 12 IL = 90 A,Tj =-40C: kILIS Tj =25C: Tj =150C: IL = 20 A,Tj =-40C: Tj =25C: Tj =150C: IL = 10 A,Tj =-40C: Tj =25C: Tj =150C: IL = 4 A,Tj =-40C: Tj =25C: Tj =150C: IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Values min typ max Unit 12 500 12 500 11 500 12 500 12 000 11 500 12 500 11 500 11 500 11 000 11 000 11 200 14 200 13 700 13 000 14 500 14 000 13 400 15 000 14 300 13 500 18 000 15 400 14 000 16 000 16 000 14 500 17 500 16 500 15 000 19 000 17 500 15 500 28 500 22 000 19 000 IIS,lim 6.5 -- -- IIN = 0: IIS(LL) -- -- VIN = 0, IL 0: IIS(LH) Current sense over voltage protection Tj =-40C: VZ,IS Ibb = 15 mA Tj = 25...+150C: 20) Current sense settling time ts(IS) -60 62 -- 2 -66 -- 65 --500 s Input Input and operating current (see diagram page 13) IIN(on) -- 0.8 1.5 mA -- -- 80 A Sense current saturation Current sense leakage current 0.5 mA A V IN grounded (VIN = 0) Input current for turn-off 21) IIN(off) 19) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 20) not subject to production test, specified by design 21) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Infineon Technologies AG Page 6 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Truth Table Input current Output Current Sense level level L H L H IIS 0 nominal H H IIS, lim H H 0 L H L H L H L H L L L L L H H 23 Z ) H L 0 0 0 0 0 22 <nominal ) 0 0 0 L H H H 0 0 Normal operation Very high load current Currentlimitation Short circuit to GND Over temperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current Remark =IL / kilis, up to IIS=IIS,lim up to VON=VON(Fold back) IIS no longer proportional to IL VON > VON(Fold back) if VON>VON(SC), shutdown will occur L = "Low" Level; H = "High" Level Over temperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms RON measurement layout I bb 4 VbIN l 5.5mm VON Vbb IL V 3 bb IN RIN V OUT PROFET IS 5 IN I IN 1,2,6,7 VbIS V IS Vbb force I IS Out Force Sense contacts contacts (both out pins parallel) VOUT DS R IS Typical RON for SMD version is about 0.2 m less than straight leads due to l 2 mm Two or more devices can easily be connected in parallel to increase load current capability. ) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. ) Power Transistor "OFF", potential defined by external impedance. 22 23 Infineon Technologies AG Page 7 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Current sense status output Input circuit (ESD protection) V bb ZD V Vbb R bb V Z,IS ZD R bb Z,IN V bIN IS IIS IN I R IN V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ). VIS IS VZ,IS = 66 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS Vbb - 5 V . should be less than IL(M) / Kilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also over voltage protection. If you don't use the current sense output in your application, you can leave it open. Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...350 s). Inductive and over voltage output clamp + Vbb VZ1 + Vbb VON VON VZG OUT PROFET OUT Logic unit Short circuit detection DS IS VOUT VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -19 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT - potential the device will switch on, if diode DS is not used. Infineon Technologies AG Page 8 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Over voltage protection of logic part + Vbb V R IN Z,IN V IN Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. R bb Z,IS Vbb disconnect with energized inductive load Logic V OUT Version a: PROFET IS R IS V bb V V Z,VIS RV IN bb PROFET OUT Signal GND Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k nominal. Note that when over voltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Reverse battery protection IS V ZL Version b: - Vbb R bb V IN Vbb bb OUT R IN IN PROFET OUT Power Transistor Logic IS IS DS D RIS RL V Zb RV Signal GND Power GND Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. RV 1 k, RIS = 1 k nominal. Add RIN for reverse battery protection in applications with Vbb above 16 V18); recommended value: Version c: Sometimes a necessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: 1 1 0.1A 1 + + = if DS is not used (or RIN RIS RV |Vbb| - 12V 1 0.1A = if DS is used). RIN |Vbb| - 12V To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. Infineon Technologies AG V Vbb bb Page 9 http://store.iiic.cc/ IN PROFET RL OUT IS 2010-April-27 Data Sheet BTS50055-1TMA Inverse load current operation Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 Vbb V bb L [H] - IL IN + PROFET OUT 1000000 V OUT + IS - 100000 IIS V IN V IS - R IS 10000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! 1000 100 10 1 1A Inductive load switch-off energy dissipation 10 A 100 A IL [A] E bb Externally adjustable current limit E AS V ELoad bb i L(t) V bb IN PROFET OUT IS I IN ZL RIS EL L { ER RL If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. Vbb Energy stored in load inductance: V bb 2 EL = 1/2*L*I L IN While demagnetizing load inductance, the energy dissipated in PROFET is Infineon Technologies AG OUT IS Rload IN Signal with an approximate solution for RL > 0 : ln (1+ |V PROFET RV EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, IL* L EAS= (V + |VOUT(CL)|) 2*RL bb 1000 A IL*RL OUT(CL)| ) Page 10 http://store.iiic.cc/ T1 Signal GND CV T2 R IS Power GND 2010-April-27 Data Sheet BTS50055-1TMA Options Overview Type BTS50055-1TMA Over temperature protection with hysteresis X 24) Tj >150 C, latch function X Tj >150 C, with auto-restart on cooling Short circuit to GND protection with over temperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 s) X Over voltage shutdown - Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -19 V typ X 25 X ) ) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output. 24 Infineon Technologies AG Page 11 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Characteristics Current sense ratio: IIS = f(IL), TJ= 25 C Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 C 7 22000 6 20000 5 18000 max max 4 16000 min 3 typ 14000 2 12000 1 min 10000 0 0 20 40 60 0 80 20 40 60 80 kILIS IIS [mA] IL [A] IL [A] Current sense ratio: KILIS = f(IL),TJ = 150C Current sense ratio: KILIS = f(IL),TJ = -40C kilis 22000 30000 28000 20000 26000 18000 24000 22000 16000 max 20000 max 18000 16000 14000 typ typ 12000 14000 min 12000 min 10000 10000 0 0 20 40 60 IL [A] Infineon Technologies AG 20 40 60 80 80 kilis Page 12 http://store.iiic.cc/ IL [A] 2010-April-27 Data Sheet BTS50055-1TMA Typ. current limitation characteristic IL = f (VON, Tj ) Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] IL [A] 450 1.6 400 1.4 350 1.2 300 VON > VON(SC) only for t < td(SC) (otherwise immediate shutdown) 250 1.0 0.8 200 TJ = 25C 0.6 150 0.4 100 TJ = 150C TJ = - 40C 50 0.2 0 0 VON(FB) 5 10 15 20 0 0 20 40 60 80 VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. VbIN [V] Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0 RON [mOhm] 14 static dynamic 12 10 Tj = 150C 8 85C 6 25C 4 -40C 2 0 0 5 10 15 40 Vbb [V] Infineon Technologies AG Page 13 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2c: Switching an inductive load: IIN IIN VOUT 90% dV/dtoff VOUT t on dV/dton t off 10% IL tslc(IS) Load 1 IIS t slc(IS) IL Load 2 IIS tson(IS) t t t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3d: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2b: Switching motors and lamps: IIN IIN IL IL(SCp) VOUT td(SC) IIL IIS VOUT>>0 VOUT=0 IIS t t Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6). Infineon Technologies AG Shut down remains latched until next reset via input. Page 14 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Figure 4e: Over temperature Reset if Tj<Tjt IIN IIS Auto Restart VOUT Tj t Figure 6f: Under voltage restart of charge pump, over voltage clamp VOUT VIN = 0 VON(CL) dynamic, short Undervoltage not below VbIN(u) 6 4 IIN = 0 2 V ON(CL) 0 0 VbIN(u) VbIN(ucp) Infineon Technologies AG Page 15 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Package and Ordering Code All dimensions in mm SMD: PG-TO220-7-4 BTS50055-1TMA Sales Code 4.4 10 0.2 1.27 0.1 0...0.3 B 0.05 2.4 0.1 3.6 0.3 2.10.3 7.551) 10.3 9.25 0.2 (13.85) A 8.5 1) 0...0.15 7 x 0.6 0.1 6 x 1.27 1) 0.5 0.1 0.25 M A B 8MAX. 0.1 B Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Footprint: 10.8 9.4 16.15 4.6 0.47 0.8 8.42 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Infineon Technologies AG Page 16 http://store.iiic.cc/ 2010-April-27 Data Sheet BTS50055-1TMA Revision History Version Date Changes Rev. 1.1 Rev. 1.0 2010-04-27 2008-01-24 Limits of parameter ton changed to min 80s / max 400s Initial version of data sheet. Green (RoHS compliant) variant of BTS650P Infineon Technologies AG Page 17 http://store.iiic.cc/ 2010-April-27 Edition 2010-April-27 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2010. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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