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Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 Dec 11 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 FEATURES PINNING - SOT223 * Direct interface to C-MOS, TTL, etc. PIN DESCRIPTION * High-speed switching 1 gate * No secondary breakdown. 2 drain 3 source 4 drain APPLICATIONS * Line current interruptor in telephone sets * Relay, high-speed and line transformer drivers. d 4 handbook, halfpage DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package. g 1 2 s 3 Top view MAM054 Marking code BSP130. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) - 300 V ID drain current (DC) - 350 mA Ptot total power dissipation Tamb 25 C - 1.5 W VGSO gate-source voltage open drain - 20 V RDSon drain-source on-state resistance ID = 250 mA; VGS = 10 V - 6 VGSoff gate-source cut-off voltage ID = 1 mA; VDS = VGS 0.8 2 V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT - 300 V - 20 V drain current (DC) - 350 mA peak drain current - 1.4 A - 1.5 W storage temperature -55 +150 C junction temperature - 150 C VDS drain-source voltage (DC) VGSO gate-source voltage (DC) ID IDM Ptot total power dissipation Tstg Tj open drain Tamb 25 C; note 1 Note 1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. 2001 Dec 11 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 83.3 K/W thermal resistance from junction to ambient; note 1 Note 1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 A; VGS = 0 300 - - V IGSS gate-source leakage current VGS = 20 V; VDS = 0 - - 100 nA VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS 0.8 - 2 V RDSon drain-source on-state resistance ID = 20 mA; VGS = 2.4 V - 4.8 10 ID = 250 mA; VGS = 10 V - 3.7 6 IDSS drain-source leakage current VDS = 240 V; VGS = 0 - - 100 nA Yfs transfer admittance ID = 250 mA; VDS = 25 V 200 690 - mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz - 100 120 pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz - 21 30 pF Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz - 10 15 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V - 6 10 ns toff turn-off time ID = 250 mA; VDD = 50 V; VGS = 10 to 0 V - 46 60 ns 2001 Dec 11 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 handbook, halfpage VDD = 50 V handbook, halfpage 90 % INPUT 10 % 90 % OUTPUT 10 V ID 0V 10 % 50 ton MBB691 MBB692 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. MRC218 2 toff MLD765 250 handbook, halfpage handbook, halfpage Ptot C (pF) (W) 200 1.5 150 1 Ciss 100 0.5 50 Coss Crss 0 0 0 50 100 150 Tj (C) 0 200 10 20 VDS (V) 30 VGS = 0; f = 1 MHz; Tj = 25 C. Fig.5 Fig.4 Power derating curve. 2001 Dec 11 4 Capacitance as a function of drain-source voltage; typical values. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 MLD766 1.2 handbook, halfpage VGS = 10 V ID 4V (A) 3.5 V MLD767 1.2 handbook, halfpage 5V ID (A) 3V 0.8 0.8 0.4 0.4 2.5 V 2V 0 0 0 4 8 VDS (V) 12 0 Tj = 25 C. 4 6 8 10 VGS (V) VDS = 10 V; Tj = 25 C. Fig.6 Typical output characteristics. Fig.7 Typical transfer characteristics. MLD768 30 handbook, halfpage 2 MLD769 20 handbook, halfpage VGS = 2 V 2.5 V RDSon () 3V RDSon 3.5 V () 15 20 10 10 5 4V 5V 10 V 0 10-1 1 ID (A) 0 10 0 4 6 8 10 VGS (V) VDS = 100 mV; Tj = 25 C. Tj = 25 C. Fig.8 2 Drain-source on-state resistance as a function of drain current; typical values. 2001 Dec 11 Fig.9 5 Drain-source on-state resistance as a function of gate-source voltage; typical values. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 MRC221 102 handbook, full pagewidth = 0.75 0.5 Rth j-a (K/W) 0.2 10 0.1 0.05 0.02 0.01 1 = P tp T 0 t tp T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time. MLD773 10 handbook, halfpage ID (A) 1 tp = 10 s 100 s 1 ms 10 ms (1) 10-1 DC 100 ms tp = T P 1s 10-2 t tp T 10-3 10 1 102 VDS (V) 103 = 0.01; Tamb = 25 C. (1) RDSon limitation. Fig.11 SOAR curve. 2001 Dec 11 6 103 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 MLD771 2 MLD772 1.25 handbook, halfpage handbook, halfpage k k (1) 1 1.5 (2) 0.75 1 0.5 0.5 0.25 0 -50 0 50 100 Tj (C) 0 -50 150 0 50 100 150 Tj (C) R DS(on) at T j k = ----------------------------------------R DS(on) at 25 C V GS ( th ) at T j k = -------------------------------------------. V GS ( th ) at 25 C Typical RDSon; (1) ID = 250 mA; VGS = 10 V. (2) ID = 20 mA; VGS = 2.4 V. Typical VGSth at 1 mA. Fig.12 Temperature coefficient of drain-source on-state resistance; typical values. Fig.13 Temperature coefficient of gate-source threshold voltage; typical values. 2001 Dec 11 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2001 Dec 11 REFERENCES IEC JEDEC EIAJ SC-73 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Dec 11 9 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 NOTES 2001 Dec 11 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 NOTES 2001 Dec 11 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA73 (c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613510/03/pp12 Date of release: 2001 Dec 11 Document order number: 9397 750 09064