2012-11-29
Page 1
BSP89
Rev. 2.2
SIPMOSÒ Small-Signal-Transistor Product Summary
VDS 240 V
RDS
(
on
)
6W
ID0.35 A
Feature
· N-Channel
· Enhancement mode
· Logic Level
·dv/dtrated PG-SOT223
VPS05163
123
4
Marking
Type Package
Tape and Reel Information
BSP89 PG-SOT223
H
6327: 1000 pcs/reel
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
0.35
0.28
A
Pulsed drain current
T
A
=25°C
I
D puls
1.4
Reverse diode dv/dt
I
S
=0.35A, V
DS
=192V, di/dt=200A/µs, T
jmax
=150°C
dv/dt6 kV/µs
Gate source voltage
V
GS
±20 V
ESD class (JESD22-A114-HBM) 1A (>250V, <500V)
Power dissipation
T
A
=25°C
P
tot
1.8 W
Operating and storage temperature
T
j
,
T
st
g
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
•
Pb-free lead plating; RoHS compliant
BSP89
•
ee lead plating; RoHS compliant
xQualified according to AEC Q101
Packaging
Non dry
4
.5V rated
•
HalogenfreeaccordingtoIEC61249221
BSP89
Rev. 2.2
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
RthJS - - 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
115
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
V(BR)DSS 240 - - V
Gate threshold voltage, VGS = VDS
ID=108µA
VGS(th) 0.8 1.4 1.8
Zero gate voltage drain current
VDS=240V, VGS=0, Tj=25°C
VDS=240V, VGS=0, Tj=150°C
IDSS
-
-
-
-
0.1
10
µA
Gate-source leakage current
VGS=20V, VDS=0
IGSS - - 10 nA
Drain-source on-state resistance
VGS=4.5V, ID=0.32A
RDS(on) - 4.9 7.5 W
Drain-source on-state resistance
VGS=10V, ID=0.35A
RDS(on) - 4.2 6
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2012-11-29
Page 2
BSP89
Rev. 2.2
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS³2*ID*RDS(on)max,
ID=0.28A
0.18 0.36 - S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
- 80 140 pF
Output capacitance Coss - 11.2 16.8
Reverse transfer capacitance Crss - 5.2 7.8
Turn-on delay time td
(
on
)
VDD=120V, VGS=10V,
ID=0.35A, RG=6W
- 4 6 ns
Rise time tr- 3.5 5.3
Turn-off delay time td
(
off
)
- 15.9 23.8
Fall time t
- 18.4 27.6
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=192V, ID=0.35A - 0.2 0.3 nC
Gate to drain charge Q
g
d- 2 3
Gate charge total QgVDD=192V, ID=0.35A,
VGS=0 to 10V
- 4.3 6.4
Gate plateau voltage V
(p
lateau
)
VDD=192V, ID = 0.35 A - 3.1 - V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - 0.35 A
Inv. diode direct current, pulse
d
ISM - - 1.4
Inverse diode forward voltage VSD VGS=0, IF=IS- 0.85 1.2 V
Reverse recovery time trr VR=120V, IF=lS,
diF/dt=100A/µs
- 67 100 ns
Reverse recovery charge Qrr - 123 184 nC
2012-11-29
Page 3
BSP89
Rev. 2.2
1 Power dissipation
Ptot = f(TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9 BSP89
Ptot
2 Drain current
ID=f(TA)
parameter: VGS³ 10 V
0 20 40 60 80 100 120 °C 160
TA
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
A
0.38 BSP89
ID
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TA = 25 °C
10 010 110 210 3
V
VDS
-3
10
-2
10
-1
10
0
10
1
10
A
BSP89
ID
R
DS(on)
=V
DS
/I
D
DC
10 ms
1 ms
tp = 160.0µs
4 Transient thermal impedance
ZthJA = f(tp)
parameter : D=tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 010 110 210 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP89
ZthJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
201211-29
Page 4
BSP89
Rev. 2.2
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj= 25 °C, VGS
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VDS
0
0.1
0.2
0.3
0.4
A
0.6
ID
3V
3.4V
3.6V
4.2V
4.6V
5V
6V
10V
6 Typ. drain-source on resistance
RDS(on) = f(ID)
parameter: Tj = 25 °C, VGS
0 0.1 0.2 0.3 0.4 A0.6
ID
0
1
2
3
4
5
6
7
W
9
RDS(on)
3V
3.4V
3.6V
4.2V
4.6V
5V
6V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0 0.5 1 1.5 2 2.5 V3.5
VGS
0
0.1
0.2
0.3
0.4
A
0.6
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0 0.1 0.2 0.3 0.4 A0.6
ID
0
0.1
0.2
0.3
0.4
S
0.6
gfs
2012-11-29
Page 5
BSP89
Rev. 2.2
9 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 0.35 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
2
4
6
8
10
12
14
16
18
20
22
24
W
30
BSP89
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS;ID =108µA
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f(VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
0 5 10 15 20 V30
VDS
0
10
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
BSP89
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2012-11-29
Page 6
BSP89
Rev. 2.2
13 Typ. gate charge
VGS =f (QG); parameter: VDS ,
ID = 0.35 A pulsed, Tj = 25 °C
0 1 2 3 4 5 nC 6.5
QG
0
2
4
6
8
10
12
V
16 BSP89
VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
216
221
226
231
236
241
246
251
256
261
266
271
276
V
291
BSP89
V(BR)DSS
2012-11-29
Page 7
2012-11-29
Page 8
BSP89
Rev. 2.2