International
Rectifier
MOSFETs and Rectifiers
816
b
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Rectifiers
Mfr.Õs V
RRM
I
FSM
I
F(AV)
A @ Package
Type* (V) (A) Max. T
C
(¡C)
1N3111 50 3000 150 @ 150 DO-30
150K5A 50 3140 150 @ 150 DO-8
1N2054¥ 50 4500 250 @ 135 DO-9
300U5A 50 5750 300 @ 130 DO-9
1N3288Aà 100 2300 100 @ 130 DO-8
1N3085 100 3000 150 @ 150 DO-30
150K10A 100 3140 150 @ 150 DO-8
150L10A 100 3140 150 @ 150 DO-30
1N4045 100 5000 275 @ 120 DO-9
1N4046 150 5000 275 @ 120 DO-9
1N3289A 200 2300 100 @ 130 DO-8
Mfr.Õs V
RRM
I
FSM
I
F(AV)
A @ Package
Type* (V) (A) Max. T
C
(¡C)
150K20A 200 3140 150 @ 150 DO-8
150L20A 200 3140 150 @ 150 DO-30
1N4048 250 5000 275 @ 120 DO-9
1N3087 300 3000 150 @ 150 DO-30
150K30A 300 3140 150 @ 150 DO-8
150L30A 300 3140 150 @ 150 DO-30
1N4049 300 5000 275 @ 120 DO-9
300U30A 300 5750 300 @ 130 DO-9
1N3088 400 3000 150 @ 150 DO-30
150K40A 400 3140 150 @ 150 DO-8
150L40A 400 3140 150 @ 150 DO-30
Mfr.Õs V
RRM
I
FSM
I
F(AV)
A @ Package
Type* (V) (A) Max. T
C
(¡C)
1N4050 400 5000 275 @ 120 DO-9
1N4051 500 5000 275 @ 120 DO-9
1N3293Aà 600 2300 100 @ 130 DO-8
1N4052 600 5000 275 @ 120 DO-9
300U60A 600 5750 300 @ 130 DO-9
150K80A 800 3140 150 @ 150 DO-8
300U80A 800 5750 300 @ 130 DO-9
1N3295Aà 1000 2300 100 @ 130 DO-8
1N4056 1000 5000 275 @ 120 DO-9
300U100A 1000 5750 300 @ 130 DO-9
ÑÑÑÑ Ñ
Silicon Standard Recovery Rectifiers Ñ General Purpose Alloy Type
*Also Available in D
2
PAK (TO-263/SMD-220). Add suffix S to the Mfr.Õs Type Number. Also available in D
2
PAK IRFS11N50A and IRFS9N60A. àIndicates Òlow VGS(th)Ó which can operate at VGS = 2.7 V.
MOSFETs (Continued)
HEXFET
ª
Power MOSFETs Ñ D
2
PAK (cont.) Ñ NEW Ñ
N-Channel (continued)
Mfr.Õs V(BR)
DSS
R
DS(on)
I
D
@ 25¡C P
D
Type (V) (½) (A) (W)
IRF3710S 100 0.0250 57.00 3.80
IRF1310NS 100 0.0360 42.00 3.80
IRF540NS 100 0.0520 33.00 3.80
IRF530NS 100 0.1100 17.00 3.80
IRF3415S 150 0.0420 43.00 3.80
IRF3515S 150 0.0450 41.00 200.00
IRF3315S 150 0.0820 21.00 94.00
IRFS31N20D 200 0.0820 31.00 200.00
IRF640NS 200 0.1500 18.00 150.00
IRF630NS 200 0.3000 9.50 82.00
IRF644S 250 0.2800 14.00 125.00
IRF740S 400 0.5500 10.00 125.00
IRF710S 400 3.6000 2.00 36.00
IRF840S 500 0.8500 8.00 125.00
IRF830S 500 1.5000 4.50 74.00
IRF820S 500 3.0000 2.50 50.00
IRFBC40AS 600 1.2000 6.20 125.00
IRFBC40S 600 1.2000 6.20 130.00
P-Channel
IRF4905L Ð55 0.0200 Ð74.00 200.00
IRF4905S Ð55 0.0200 Ð74.00 3.80
IRF5305S Ð55 0.0600 Ð31.00 110.00
IRF9Z24NS Ð55 0.1750 Ð12.00 45.00
IRF9540NS Ð100 0.1170 Ð23.00 3.80
IRF9530NS Ð100 0.2000 Ð14.00 3.80
IRF9510S Ð100 1.2000 Ð4.00 43.00
IRF6215S Ð150 0.2900 Ð13.00 110.00
IRF9640S Ð200 0.5000 Ð11.00 125.00
IRF9630S Ð200 0.8000 Ð6.50 74.00
Logic Level N-Channel
IRL3502S 20 0.0070 110.00 140.00
IRL3102S 20 0.0130 61.00 89.00
IRL3803S 30 0.0060 140.00 200.00
IRL2203NS 30 0.0070 116.00 170.00
IRL3303S 30 0.0260 38.00 68.00
IRL1004S 40 0.0065 110.00 150.00
IRL2505S 55 0.0080 104.00 200.00
IRL3705NS 55 0.0100 89.00 170.00
IRLZ44NS 55 0.0220 47.00 110.00
IRLZ34NS 55 0.0350 30.00 68.00
IRLZ24NS 55 0.0600 18.00 45.00
IRLZ14S 60 0.2000 10.00 Ñ
IRL2910S 100 0.0260 55.00 3.80
IRL540NS 100 0.0440 36.00 3.80
IRL530NS 100 0.1000 17.00 3.80
IRL520NS 100 0.1800 10.00 3.80
IRL640S 200 0.1800 17.00 125.00
IRL630S 200 0.4000 9.00 74.00
HEXFET
ª
Power MOSFETs Ñ SOT-223
The SOT-223 package is capable of dissipating more than 1 W in a typical
printed circuit board application. Package design allows for maximum die size,
optimum thermal performance and ease of surface-mount manufacturing.
Suitable for use with all soldering techniques.
N-Channel
Mfr.Õs V(BR)
DSS
R
DS(on)
I
D
@ 25¡C P
D
Type (V) (½) (A) (W)
IRFL014N 55 0.1600 1.90 2.10
IRFL014 60 0.2000 5.20 2.00
IRFL4310 100 0.2000 2.20 2.10
IRFL110 100 0.5400 1.50 2.00
IRFL210 200 1.5000 0.96 2.00
IRFL214 250 2.0000 0.79 2.00
Logic Level N-Channel
IRLL3303 30 0.0310 6.50 2.10
IRLL2705 55 0.0400 5.20 2.10
IRLL014N 55 0.1400 2.00 1.00
IRLL014 60 0.2000 2.70 2.00
IRLL110 100 0.5400 1.50 2.00
HEXFET
ª
Power MOSFETs Ñ SO-8
N-Channel
IRF7456 20 0.0065 16.00 2.50
IRF7455 30 0.0075 13.00 1.60
P-Channel
IRF7210 Ð12 0.0050 Ð16.00 2.50
Logic Level N-Channel
IRF7401 20 0.0220 8.70 2.50
IRF7811A 28 0.0120 11.40 2.50
IRF7413 30 0.0110 12.00 2.50
Si4410DY 30 0.0135 10.0 2.50
IRF9410 30 0.0300 7.00 2.50
IRF7201 30 0.0300 7.00 2.50
Logic Level P-Channel
IRF7404 Ð20à 0.0400 Ð5.30 2.50
IRF7416 Ð30 0.0200 Ð8.80 2.50
IRF7406 Ð30 0.0450 Ð4.70 2.50
Logic Level Dual N-Channel
IRF7311 20à 0.0290 6.60 2.00
IRF7301 20à 0.0500 4.30 2.00
IRF7101 20 0.1000 3.50 2.00
IRF7313 30 0.0290 7.00 2.00
IRF7303 30 0.0500 4.00 2.00
IRF7103 50 0.1300 3.00 2.00
IRF7341 55 0.0500 4.70 2.00
HEXFET
ª
Power MOSFETs Ñ SO-8 (continued)
Logic Level Dual P-Channel
Mfr.Õs V(BR)
DSS
R
DS(on)
I
D
@ 25¡C P
D
Type (V) (½) (A) (W)
IRF7324 Ð20à 0.0260 9.00 2.00
IRF7314 Ð20 0.0580 Ð4.20 2.00
IRF7304 Ð20à 0.0900 Ð3.60 2.00
IRF7316 Ð30 0.0580 Ð4.90 2.00
IRF7306 Ð30 0.1000 Ð3.60 2.00
IRF9953 Ð30 0.2500 Ð2.30 2.00
IRF7342 Ð55 0.1050 Ð3.40 2.00
Logic Level Dual N- and P-Channel
IRF7307 20à 0.0500 4.30 1.40
Ð20 0.0900 Ð3.60 1.40
IRF7105 25 0.1000 3.50 2.00
Ð25 0.2500 Ð2.30 2.00
IRF7319 30 0.0290 6.50 2.00
Ð30 0.0580 Ð4.90 2.00
IRF7309 30 0.0500 4.00 2.00
Ð30 0.1000 Ð3.00 2.00
IRF9952 30 0.1000 3.50 2.00
Ð30 0.2500 Ð1.80 2.00
IRF7343 55 0.0500 4.70 2.00
Ð55 0.1050 Ð3.40 2.00
HEXFET
ª
Power MOSFETs Ñ Micro3
ª
Logic Level N-Channel
IRLML2803TR 30 0.2500 0.91 540.00
Logic Level P-Channel
IRLML5103TR Ð30 0.6000 Ð0.60 540.00
HEXFET
ª
Power MOSFETs Ñ Micro6
ª
P-Channel
IRLMS6802TR Ð20 0.0500 Ð5.60 2.00
Si3443DV Ð20 0.0650 4.40 2.00
IRLMS5703TR Ð30 0.2000 Ð1.60 1.70
HEXFET
ª
Power MOSFETs Micro8
ª
Logic Level Dual N- and P-Channel
IRF7507TR 20à 0.1350 1.70 1.25
Ð20 0.2700 Ð1.30 1.25
IRF7509TR 30 0.1350 1.70 1.25
Ð30 0.2700 Ð1.20 1.25
HEXFET
ª
Power MOSFETs Super-247
N-Channel
IRFPS37N50A 500 0.1300 36.00 446.00
HEXFET
ª
Power MOSFETs Super-220
N-Channel
IRFBA22N50A 500 0.2300 22.00 210.00
*Cathode-to-stud; for anode-to-stud, add ÒRÓ to basic number (example: 1N3289AR, 1N3111R, 150LR5A). Also available in stud-topped case and flag terminal. à1N3288 series also available. ¥1N3735 series also available.ö
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