RMB4S-E380 - VISHAY - Pdf.Support

RMB2S, RMB4S

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Revision: 04-Aug-2020 1Document Number: 88705

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Miniature Glass Passivated Fast Recovery

Surface-Mount Bridge Rectifier

LINKS TO ADDITIONAL RESOURCES

FEATURES

• UL recognition, file number E54214

• Saves space on printed circuit boards

• Ideal for automated placement

• Fast recovery, low switching loss

• High surge current capability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for power supply, lighting ballaster, battery charger, home

appliances, office equipment, and telecommunication

applications.

MECHANICAL DATA

Case: MBS (TO-269AA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked on body

Notes

(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads

(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad

PRIMARY CHARACTERISTICS

IF(AV) 0.5 A

VRRM 200 V, 400 V

IFSM 30 A

trr 150 ns

VF at IF = 0.4 A 1.25 V

TJ max. 150 °C

Package MBS (TO-269AA)

Circuit configuration Quad

MBS (TO-269AA)

3D Models

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL RMB2S RMB4S UNIT

Device marking code 2R 4R

Maximum repetitive peak reverse voltage VRRM 200 400 V

Maximum RMS voltage VRMS 140 280 V

Maximum DC blocking voltage VDC 200 400 V

Maximum average forward output

rectified current at TA = 30 °C

on glass-epoxy PCB (1)

IF(AV) 0.5 A

on aluminum substrate (2) 0.8

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 30 A

Rating for fusing (t < 8.3 ms) I2t5.0A

Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

RMB2S, RMB4S

www.vishay.com Vishay General Semiconductor

Revision: 04-Aug-2020 2Document Number: 88705

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads

(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL RMB2S RMB4S UNIT

Maximum instantaneous forward

voltage per diode IF = 0.4 A VF 1.25 V

Maximum DC reverse current at rated DC blocking

voltage per diode

TA = 25 °C IR 5.0 μA

TA = 125 °C 100

Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 150 ns

Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL RMB2S RMB4S UNIT

Typical thermal resistance (1)

RJA (1) 85

°C/W RJA (2) 70

RJL (1) 20

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

RMB4S-E3/45 0.22 45 100 Tube

RMB4S-E3/80 0.22 80 3000 13" diameter paper tape and reel

RMB2S, RMB4S

www.vishay.com Vishay General Semiconductor

Revision: 04-Aug-2020 3Document Number: 88705

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

020 40 60 80 100 120 140 160

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Aluminum Substrate

Glass Epoxy PCB

Average Forward Rectified Current (A)

Ambient Temperature (°C)

Resistive or Inductive Load

110 100

f = 60 Hz

f = 50 Hz

= 40 °C

Single Half Sine-Wave

Number of Cycles

Peak Forward Surge Current (A)

1.0 Cycle

0.3 0.5 0.7 0.9 1.1 1.3 1.5

0.01

0.1

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

Pulse Width = 300 µs

1 % Duty Cycle

TJ = 150 °C

TJ = 25 °C

020 40 60 80 100

0.01

0.1

100

TJ = 125 °C

TJ = 25 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

0.1 110 100

1000

Reverse Voltage (V)

Junction Capacitance (pF)

= 25 °C

f = 1.0 MHz

sig

= 50 mVp-p

RMB2S, RMB4S

www.vishay.com Vishay General Semiconductor

Revision: 04-Aug-2020 4Document Number: 88705

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.029 (0.74)

0.017 (0.43)

0 to 8°

0.049 (1.24)

0.039 (0.99)

0.062 (1.57)

0.058 (1.47)

0.016 (0.41)

0.006 (0.15)

0.018 (0.46)

0.014 (0.36)

0.008 (0.20)

0.004 (0.10)

0.114 (2.90)

0.110 (2.80)

0.058 (1.47)

0.054 (1.37)

0.252 (6.40)

0.272 (6.90)

0.106 (2.70)

0.090 (2.30)

0.0075 (0.19)

0.0065 (0.16)

0.105 (2.67)

0.095 (2.41)

0.195 (4.95)

0.179 (4.55)

0.144 (3.65)

0.161 (4.10)

0.205 (5.21)

0.195 (4.95)

0.114 (2.90)

0.094 (2.40) 0.038 (0.96)

0.019 (0.48)

0.272 MAX.

(6.91 MAX.)

0.030 MIN.

(0.76 MIN.)

0.023 MIN.

(0.58 MIN.)

0.105 (2.67)

0.095 (2.41)

MBS (TO-269AA)

Mounting Pad Layout

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 01-Jan-2021 1Document Number: 91000

Disclaimer

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