© by SEMIKRON B 2 – 53
SEMIPACK
®
3
Fast Thyristor/ Diode
Modules
SKFT 150
SKFH 150
SKFT SKFH
Features
•Heat transfer through ceramic
isolated metal baseplate
•Interdigitated amplifying gates
•Precious metal pressure
contacts
•UL recognition, file no. E63 532
Typical Applications
•Self-commutated inverters
•DC choppers
•AC motor speed control
•Inductive heating
•Uninterruptible power supplies
•Electronic welders
•General power switching
applications
1)
Available in limited quantities
V
DRM
t
q
I
TRMS
(maximum values for co ntinuous operation)
V
RRM
(T
vj
= 350 A
125 °C) I
TAV
(sin. 180; T
case
= 76 °C; 50 Hz)
Vµs 150 A
800 15 SKFT 150/08 DS SKFH 150/08 DS
20 SKFT 150/08 DT SKFH 150/08 DT
1000 15 SKFT 150/10 DS
1)
–
Symbol Conditions SKFT 150 Units
SKFH 150
I
TM
sin. 180; T
case
= 60 °C; 500 Hz 610 A
I
TSM
T
vj
= 25 °C; 10 ms 6 500 A
T
vj
= 125 °C; 10 ms 5 500 A
i
2
tT
vj
= 25 °C; 8,3 ... 10 ms 211 000 A
2
s
T
vj
= 125 °C; 8,3 ... 10 ms 151 000 A
2
s
t
gd
T
vj
= 25 °C; I
g
= 1 A; di
G
/dt = 1 A/µs1 µs
t
gr
V
D
= 0,67 . V
DRM
1 µs
(di/dt)
cr
non-repetitive/f = 50 . . . 60 Hz 1000 / 400 A/µs
(dv/dt)
cr
T
vj
= 125 °C 500 V/µs
I
H
T
vj
= 25 °C; typ./max. 200 / 400 mA
I
L
T
vj
= 25 °C; R
G
= 33 Ω; typ./max. 1 / 2 A
V
T
T
vj
= 125 °C; I
T
= 1200 A; max. 2,45 V
V
T(TO)
T
vj
= 125 °C1,9V
r
T
T
vj
= 125 °C0,4mΩ
I
D
; I
R
T
vj
= 125 °C; V
DRM
; V
RRM
80 mA
V
GT
T
vj
= 25 °C4V
I
GT
T
vj
= 25 °C 250 mA
V
GD
T
vj
= 125 °C 0,25 V
I
GD
T
vj
= 125 °C10mA
Thyristor data
t
rr
T
vj
= 25 °C; I
F
= 1 A;
– di
F
/dt = 15 A/µs; V
R
= 30 V 2 µs
Q
rr
T
vj
= 125 °C; I
F
= 150 A; 250 µC
I
RM
– di
F
/dt = 100 A/µs; V
R
= 100 V 175 A
I
R
T
vj
= 125 °C; V
R
= V
RRM
80 mA
V
F
T
vj
= 25 °C; I
F
= 1200 A; max. 1,85 V
V
(TO)
T
vj
= 125 °C1,25V
r
T
T
vj
= 125 °C 0,5 mΩ
Fast rectifier diode data
0895
http://store.iiic.cc/