KST-I018-000 1
STD13003L
NPN Silicon Power Transistor
Features
• High speed switching
• VCEO(sus)=400V
• Suitable for Switching Regulator and Motor Control
Ordering Information
Type NO. Marking Package Code
STD13003L STD13003 TO-92L
Outline Dimensions unit : mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Connections
1. Base
2. Collector
3. Emitter
KST-I018-000 2
STD13003L
Absolute maximum ratings (Tc=25℃)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 700 V
Collector-Emitter voltage VCEO 400 V
Emitter-base voltage VEBO 9 V
Collector current (DC) IC 1.5 A
Collector current (Pulse) ICP 3 A
Base current (DC) IB 0.75 A
Total Power dissipation (Ta=25℃) PC 1.5 W
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics (Tc=25℃)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter sustaining voltage VCE(sus) I
C=5mA, IB=0 400 - - V
Emitter cut-off current IEBO V
EB=9V, IC=0 - - 10 uA
IC=0.5A, VCE=2V 8 - 40
DC Current gain hFE*
IC=1A, VCE=2V 5 - -
IC=0.5A, IB=0.1A - - 0.5
IC=1A, IB=0.25A - - 1
Collector-Emitter saturation voltage VCE(sat)*
IC=1.5A, IB=0.5A - - 3
V
IC=0.5A, IB=0.1A - - 1
Base-Emitter saturation voltage VBE(sat)*
IC=1A, IB=0.25A - - 1.2
V
Transition frequency fT V
CB=10V, IC=0.1A, f=1MHz 4 - - MHz
Output capacitance Cob V
CB=10V, IE=0, f=0.1MHz - 21 - pF
Turn on Time ton - - 1.1
Storage Time tstg - - 4
Fall Time tf
VCC=125V,IC=1A
IB1=-IB2=0.2A
- - 0.7
㎲
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse
KST-I018-000 3
STD13003L
Electrical Characteristic Curves
Fig. 6 Safe Operating Area
Fig. 1 IC - VCE Fig. 2 VBE(sat) , VCE(sat) - IC
Fig. 3 hFE-IC Fig. 4 Turn off time
Fig. 5 Turn on time
