MBR16100CT SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * * * * * 16 Amps Total (8.0 Amps Per Diode Leg) Guard-Ring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction http://onsemi.com SCHOTTKY BARRIER RECTIFIER 16 AMPERES 100 VOLTS 1 Mechanical Characteristics: 2, 4 * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * 3 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B16100 4 TO-220AB CASE 221A PLASTIC MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 133C IF(AV) 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133C IFRM 16 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature TJ 65 to +175 C Storage Temperature Tstg 65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s 1 2 MARKING DIAGRAM YYWW B16100 AKA YY = Year WW = Work Week B16100 = Device Code AKA = Polarity Designator ORDERING INFORMATION Device MBR16100CT Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 0 3 1 Package Shipping TO-220 50 Units/Rail Publication Order Number: MBR16100CT/D MBR16100CT THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RJC RJA 2.0 60 C/W Maximum Thermal Resistance - Junction to Case - Junction to Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 1.) (iF = 8.0 Amps, TC = 125C) (iF = 8.0 Amps, TC = 25C) (iF = 16 Amps, TC = 125C) (iF = 16 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.6 0.74 0.69 0.84 mA 5.0 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD VOLTAGE (AMPS) 100 10 125C 75C 1 175C TJ = 25C 0.1 10 125C 75C 1 175C TJ = 25C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode Figure 2. Maximum Forward Voltage Per Diode http://onsemi.com 2 1 MBR16100CT 1400 175C 1200 0.01 C, CAPACITANCE (pF) IR, REVERSE CURRENT (AMPS) 0.1 125C 0.001 0.0001 75C 0.00001 0.000001 1000 800 600 400 200 TJ = 25C 0.0000001 0 10 20 30 40 50 60 70 80 90 0 100 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Per Diode Figure 4. Typical Capacitance Per Diode PD, AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) 0 14 dc 12 SQUARE WAVE 10 8 6 4 2 0 140 145 150 155 160 165 170 175 180 8 SQUARE WAVE 7 6 dc 5 4 3 2 1 0 -1 0 2 4 6 8 10 12 TC, CASE TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating (Per Diode), Case Figure 6. Average Power Dissipation http://onsemi.com 3 14 MBR16100CT PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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