Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 0 1Publication Order Number:
MBR16100CT/D
MBR16100CT
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
•16 Amps Total (8.0 Amps Per Diode Leg)
•Guard–Ring for Stress Protection
•Low Forward Voltage
•175°C Operating Junction Temperature
•Epoxy Meets UL94, VO at 1/8″
•Low Power Loss/High Efficiency
•High Surge Capacity
•Low Stored Charge Majority Carrier Conduction
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Shipped 50 units per plastic tube
•Marking: B16100
MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(Rated VR) TC = 133°CIF(AV) 8.0 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
TC = 133°C
IFRM 16 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current
(2.0 µs, 1.0 kHz) IRRM 0.5 A
Operating Junction Temperature TJ65 to
+175 °C
Storage Temperature Tstg 65 to
+175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/µsDevice Package Shipping
ORDERING INFORMATION
MBR16100CT TO–220
http://onsemi.com
TO–220AB
CASE 221A
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIER
16 AMPERES
100 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
YYWW
B16100
A K A
YY = Year
WW = Work Week
B16100= Device Code
AKA = Polarity Designator
MBR16100CT
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance – Junction to Case
– Junction to Ambient RθJC
RθJA 2.0
60 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 8.0 Amps, TC = 125°C)
(iF = 8.0 Amps, TC = 25°C)
(iF = 16 Amps, TC = 125°C)
(iF = 16 Amps, TC = 25°C)
vF0.6
0.74
0.69
0.84
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR5.0
0.1
mA
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%.
Figure 1. Typical Forward Voltage Per Diode Figure 2. Maximum Forward Voltage Per Diode
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
0.2 0.4 0.8
1
0.1 1
TJ = 25°C
175°C
125°C75°C
0.50.1 0.3 0.7 0.9
iF, INSTANTANEOUS FORWARD
VOLTAGE (AMPS)
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
0.2 0.4 0.8
1
0.1 1
TJ = 25°C
175°C
125°C75°C
0.50.1 0.3 0.7 0.9
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
MBR16100CT
http://onsemi.com
3
SQUARE
WAVE
dc
Figure 3. Typical Reverse Current Per Diode Figure 4. Typical Capacitance Per Diode
0
VR, REVERSE VOLTAGE (VOLTS)
0.001
0.00001
0.0000001
VR, REVERSE VOLTAGE (VOLTS)
100
1200
600
02010 20 30 40 30 40 80
0.0001
0.1
0.01
1400
1000
800
50 60 70100
0.000001 200
400
90 100
Figure 5. Current Derating (Per Diode), Case Figure 6. Average Power Dissipation
140
TC, CASE TEMPERATURE (°C)
14
6
8
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
20
8
5
–1 4145 150 155 160 6 8
SQUARE
WAVE
dc
12
10 6
4
3
2
10 12 14165
2
4
0
1
7
PD, AVERAGE POWER DISSIPATION (WATTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
170 175 180
C, CAPACITANCE (pF)
50 60 70 80 90
IR, REVERSE CURRENT (AMPS)
TJ = 25°C
175°C
125°C
75°C
MBR16100CT
http://onsemi.com
4
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
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MBR16100CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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