© 2006 IXYS All rights reserved DS99509E(04/06)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 250 µA 3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 125°C 200 µA
RDS(on) VGS = 10 V, ID = 1.8 A 2.0 Ω
Note 1
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFP 3N50PM VDSS = 500 V
ID25 = 2.7 A
RDS(on) ≤≤
≤≤
≤2.0 ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C 2.7 A
IDM TC= 25°C, pulse width limited by TJM 8A
IAR TC= 25°C3A
EAR TC= 25°C10mJ
EAS TC= 25°C 100 mJ
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 50 Ω
PDTC= 25°C36W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 4g
G = Gate D = Drain
S = Source
Features
lPlastic overmolded tab for electrical
isolation
lFast intrinsic diode
lInternational standard package
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
OVERMOLDED TO-220
(IXTP...M) OUTLINE
GDS
Isolated Tab
(Electrically Isolated Tab)
Preliminary Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFP 3N50PM
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 1.8 A, Note 1 3.5 S
Ciss 409 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 48 pF
Crss 6.1 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 3.6 A 28 ns
td(off) RG = 50 Ω (External) 63 ns
tf29 ns
Qg(on) 9.3 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 1.8 3.3 nC
Qgd 3.4 nC
RthJC 3.5 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 3.6 A
ISM Repetitive 5 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 3.6 A, -di/dt = 100 A/µs, 200 ns
QRM VR = 100 V, VGS = 0 V 0.1 µC
IRM 0.5 A
Notes: 1) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2) Test current IT = 2.5 A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
123
ISOLATED TO-220 (IXTP...M)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
