MMBT3906T
PNP General Purpose Transistor
FEATURES
•
Ideally suited for automatic insertion
•
For Switching and AF Amplifier Applications
MECHANICAL DATA
•
Case: SOT-523 Plastic
•
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
•
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings
@ T
A
= 25℃
Characteristic Symbol
Value
Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current -Continuous I
C
-200 mA
Collector Power Dissipation P
C
150 mW
Thermal Resistance, Junction to Ambient R
Θ
JA
833 /W℃
Junction Temperature T
J
150 ℃
Storage Temperature Range T
STG
-55~+150 ℃
Electrical Characteristics
@
T
A
= 25℃ unless otherwise specified
Characteristic Test Condition Symbol
Min. Typ. Max.
Unit
Collector-base breakdown voltage I
C
=-10µA,I
E
=0 V
CBO
-40 V
Collector-emitter breakdown voltage
I
C
=-1mA,I
B
=0 V
CEO
-40 V
Emitter-base breakdown voltage I
E
=-10µA,I
C
=0 V
EBO
-5 V
Collector-base cut-off current V
CB
=-30V,I
E
=0 I
CBO
-0.1 uA
Emitter-base cut-off current V
EB
=-5V,I
C
=0 I
EBO
-0.1 uA
V
CE
=-1V,I
C
=-0.1mA h
FE1
60
V
CE
=-1V,I
C
=-1mA h
FE2
80
V
CE
=-1V,I
C
=-10mA h
FE3
100 300
V
CE
=-1V,I
C
=-50mA h
FE4
60
DC current gain
V
CE
=-1V,I
C
=-100mA h
FE5
30
I
C
=-10mA,I
B
=-1mA V
CE
(sat)1
-0.25 V
Collector-emitter saturation voltage I
C
=-50mA,I
B
=-5mA V
CE
(sat)2
-0.4 V
I
C
=-10mA,I
B
=-1mA V
BE
(sat)1
-0.65 -0.85 V
Base-emitter saturation voltage I
C
=-50mA,I
B
=-5mA V
BE
(sat)2
-0.95 V
Transition frequency V
CE
=-20V,I
C
=-10mA,
f=100MHz f
T
250 MHz
Collector output capacitance V
CB
=-5V,I
E
=0,f=1MHz Cob 4.5 pF
Input capacitance V
EB
=-0.5V,I
E
=0,f=1MHz Ciob 10 pF
Noise figure V
CE
=-5V,I
C
=-0.1mA NF 4 dB
Delay time T
d
35 nS
Rise time
V
CC
=-3V, V
BE
=-0.5V
I
C
=-10mA , I
B1
=-I
B2
=-1mA T
r
35 nS
Storage time T
s
225 nS
Fall time
V
CC
=-3V, I
C
=-10mA
I
B1
=-I
B2
=-1mA T
f
75 nS
REV. 2, Jun-2012, KSPR13