SBE D WM 7929237 0041581 840 MBSGTH key, SGS-THOMSON Elel 7 iwichotuscrzomics BZX 79 C 2V4100 SG S-THOMSON ZENER DIODES a VOLTAGE RANGE : 2.4V TO 100V = DOUBLE SLUG TYPE CONSTRUCTION a PRO ELECTRON REGISTRATION 2.4V TO 100V a CECC FOR TYPES : 2.7V TO 62V (LEVEL QUALITY ASSESSMENT : L) DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Prot Power Dissipation Tamp = 50C 0.5 Ww lou Continuous Reverse Current Tamb = 50C See page 2 mA Tstg Storage and Junction Temperature Range 65 to 200 c q, TL Maximum Lead Temperature for Soldering during 230 i 01 10s at 4mm from Case THERMAL RESISTANCE , Symbol Parameter Value Unit Rth yay | Junctionambient* 300 C/W * On infinite heatsink with 4mm lead length July 1989 18 103SbE D MM 7929237 0041542 7T? MSGTH BZX 79 C S G S-THOMSON ELECTRICAL CHARACTERISTICS (Tamp = 25C unless otherwise specified) Types Vatilzr* rzri/lzr | lzt rzk/IzK Vz In/Va Vr | tem Tamb 25C 150C min max max max min max max max (Vv) (Q) (mA) | (Q) (mA) (mv/C) (uA) ()_|_ (ma) BZxX 79 C 2V4 22 26 100 5 600 -~35 0 50 100 1 | 155 A BZX 79 C 2V7 25 2.9 100 5 600 j -35 0 20 50 1 | 135 A BZX 79 C 3V0 28 32 95 5 600 1 -35 0 10 40 1 1125 P A B2X 79 C 3V3 31 35 95 5 600 1 -35 0 5 40 41415 P A BZX 79 C 3V6 34 38 90 5 600 1 -35 0 5 40 1 | 105 P A BZX 79 C 3V9 a7 41 90 5 600 1 -35 0 3 40 1 95 P A BZX 79 C 4V3 40 46 90 5 600 1 -35 0 3 20 1 90 P A BZX 79 C 4V7 44 50 80 5 500 1 -35 +02 3 10 2 85 P A BZX 79 C 5V1 48 54 60 5 480 1 -27 +14.2 2 10 2 80 P A BZX 79 5V6 52 60 40 5 400 4 ~20 +25 1 10 2 70 P A BZX 79 GC 6V2 58 66 10 5 150 4 o4 37 3 10 4 64 P 4 BZX 79 C 6V8 64 72 15 5 80 1 12 45 2 5 4 58 P A BZX 79 C 7V5 70 79 15 5 80 i 25 53 1 5 5 53 A BZX 79 8V2 77 87 16 5 80 1 32 62 07 2 5 47 P A BZX 79 C 9V1 85 96 15 5 100 1 38 70 05 2 6 43 P A BZX 79 C 10 94 106 20 5 150 1 45 80 02 2 7 40 A B2X 79 C 11 10.4 116 20 5 160 1 54 90 01 2 8 36 P ABZX 79C 12 114 12.7 25 5 150 1 60 100 o1 2 8 32 A BZX 79C 13 124 144 30 5 170 1 70 110 o1 2 8 29 P A B2x 79C 15 138 156 30 5 200 1 92 130 005 2 10 27 A B2ZX 79 C 16 153 171 40 5 200 1 104 140 005 2 11 24 P A B2X 79C 18 16.8 191 45 5 225 1 124 160 005 2 13 21 P A BZX 79 C 20 18.8 212 55 5 225 1 144 180 005 2 14 20 P A BZX 79 C 22 20.8 233 55 5 250 1 164 200 0.05 2 15 18 P A BZX 79 24 228 256 70 5 250 1 184 220 005 2 17 16 P A BZX 79 C 27 251 289 80 2 300 05 214 253 005 2 19 14 A BZX 79 C 30 28 32 80 2 300 05 244 294 005 2 21 13 P A BZX 79 C 33 31 35 80 2 325 05 274 334 005 2 23 12 A BZX 79 C 36 34 38 90 2 350 05 304 374 005 2 25 11 A BZX 79 C 39 37 41 130 2 350 05 334 412 005 2 27 10 A BZX 79 C 43 40 46 150 2 375 a5 376 466 005 2 29 92 A BZX 79 C 47 44 50 170 2 375 a6 420 518 005 2 33 85 A BZX 79 C 51 48 54 180 2 400 05 466 572 005 2 36 78 A BZX 79 C 56 52 60 200 2 425 05 522 638 005 2 39 70 A BZX 79 62 58 66 215 2 450 05 588 71.6 005 2 43 64 BZX 79 C 68 64 72 240 2 475 a5 656 79.8 005 2 48 59 BZX 79 C 75 70 79 255 2 500 a5 734 88.6 005 2 52 53 BZX 79 C 82 77 87 280 2 525 05 804 976 005 2 62 49 BZX 79 C 91 85 96 300 2 550 05 g94 1092 005 2 69 44 BZx 79 C 100 94 106 500 2 600 05 99 121 005 2 76 4 Pulse test tp <300us 8<2% A Devices under CCQ/CECC. P Preterred voltages The regulation voltages are defined according to the E24 series. 2/3 104 hy SGS-THOMSON MICROELECTRONICSSBE D MM 7929237? 0041583 433 MESGTH BZX 79 C PACKAGE MECHANICAL DATA SG S=THOMSON DO 35 (Glass) 12.7 min 3.05 12,7 min 21,53 2,00 I S 0,458 2 0,458 1 0,558 0,558 Cooling method by convection and conduction Marking clear, ring at cathode end Weight 0 15g {57 SGS-THOMSON 38 J/ imicRoeeerromes 105