2SC1815
2003-03-27
1
TO SHIBA T r ansistor Silicon NP N Epitaxi a l Ty pe (PCT proce ss)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
· High voltage and high current: VCEO = 50 V (min),
I
C = 150 mA (max)
· Excellent hFE linearity : hFE (2) = 100 (typ.)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
· Low noise: NF = 1dB (typ.) at f = 1 kHz
· Complementary to 2SA1015 (O, Y, GR class)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collect or-base voltage VCBO 60 V
Collect or-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 50 mA
Collect or power diss i pation PC 400 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 60 V, IE = 0 ¾ ¾ 0.1 mA
Emitte r cut-off cur r ent IEBO V
EB = 5 V, IC = 0 ¾ ¾ 0.1 mA
hFE (1)
(Note) VCE = 6 V, IC = 2 mA 70 ¾ 700
DC current gain
hFE (2) V
CE = 6 V, IC = 150 mA 25 100 ¾
Collect or-em it t e r saturati on vol tage VCE (sat) I
C = 100 mA, IB = 10 mA ¾ 0.1 0.25 V
Base-emitter saturation voltage VBE (sat) I
C = 100 mA, IB = 10 mA ¾ ¾ 1.0 V
Transiti on frequenc y fT V
CE = 10 V, IC = 1 mA 80 ¾ ¾ MHz
Collect or output capaci t ance Cob V
CB = 10 V, IE = 0, f = 1 MHz ¾ 2.0 3.5 pF
Base intrinsic resistance rbb’ VCE = 10 V, IE = -1 mA
f = 30 MHz ¾ 50 ¾ W
Noise figure NF VCE = 6 V, IC = 0.1 mA
f = 1 kHz, RG = 10 kW ¾ 1.0 10 dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)