JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC143TE/DTC143TUA
/DTC143TKA /DTC143TSA/ DTC143TCA
DIGITAL TRANSISTOR (NPN)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input.They also have the advantage of almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device design easy.
PIN CONNENCTIONS AND MARKING
(1) Emitter
(2) Collector
(3) Base
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 03
SOT-523
Addreviated symbol: 03
SOT-23-3L SOT-23
SOT-323
TO-92S
DTC143TE DTC143TUA
DTA114ECA DTC143TCA DTC143TKA
DTC143TSA
Addreviated symbol: 03
Addreviated symbol: 03
Absolute maximum ratings(Ta=25℃)
Limits (DTC143T□ )
Parameter Symbol
E UA CA KA SA Unit
Collector-base voltage V(BR)CBO 50 V
Collector-emitter voltage V(BR)CEO 50 V
Emitter-base voltage V(BR)EBO 5 V
Collector current IC 100 mA
Collector Power dissipation PC 150 200 300 mW
Junction temperature Tj 150 ℃
Storage temperature Tstg -55~150 ℃
Electrical characteristics (Ta=25℃)
Typical Characteristics
Parameter Symbol Min. Typ Max. Unit Conditions
Collector-base breakdown voltage V(BR)CBO 50 V Ic=50µA
Collector-emitter breakdown voltage V(BR)CEO 50 V Ic=1mA
Emitter-base breakdow n voltage V(BR)EBO 5 V IE=50µA
Collector cut-off current ICBO 0.5 µA VCB=50V
Emitter cut-off current IEBO 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=5mA,IB=0.25mA
DC current transfer ratio hFE 100 600 VCE=5V,IC=1mA
Input resistance R1 3.29 4.7 6.11 KΩ
Transition frequency fT 250 MHz VO=10V ,IO=5mA,f=100MHz
