2N3501UB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appen di x E
• JAN level (2N3501UBJ)
• JANTX level (2N3501UBJX)
• JANTXV level (2N3501UBJV)
• JANS level (2N3501UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• Gene ral pu rp ose
• Low po wer
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chi p ge ometry 5620
• Reference document :
MIL-PRF-19500/366
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 150 Volts
Collector-Base Voltage VCBO 150 Volts
Emitter-Base Voltage VEBO 6 Volts
Collector Current, Continuous IC300 mA
Power Dissipation, TA = 25OC
Derate linearly above 25OC PT.5
3.08 W
mW/°C
Thermal Resistance RθJA 325 °C/W
Operating Junction Temperature TJ-65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright© 2004 Semicoa
Rev. J.2 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3501UB
Silicon NPN Transisto
r
Data Sheet
Copyright© 2004 Semicoa
Rev. J.2 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 150 Volts
Collector-Base Cutoff Current ICBO1
ICBO2
ICBO3
VCB = 150 Volts
VCB = 75 Volts
VCB = 75 Volts, TA = 150°C
10
50
50
µA
nA
µA
Collector-Emitter Cutoff Current ICEO VCE = 120 Volts 1 µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
25 µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE7
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 1500 mA, VCE = 10 Volts
IC = 300 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
TA = -55°C
35
50
75
100
20
45
300
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
0.8
1.2 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
0.2
0.4 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 20 Volts, IC = 20 mA,
f = 100 MHz 1.5 8
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 10 Volts, IC = 10 mA,
f = 1 kHz 75 375
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 8
pF
Open Circuit Inpu t Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 80
pF
Noise Figure
NF1
NF2
VCE = 10 Volts, IC = 0.5 mA,
f = 1 kHz, Rg = 1 kΩ
VCE = 10 Volts, IC = 0.5 mA,
f = 10 kHz, Rg = 1 kΩ
16
6 dB
Switching Characteristics
Saturated Turn-On Time tON VEB = 5 Volts, IC = 150 mA,
IB1 = 15 mA 115
ns
Saturated Turn-Off Time tOFF IC = 150 mA, IB1=IB2=15 mA 1,150 ns
