BA157GP thru BA159GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES * Superectifier structure for high reliability condition * Cavity-free glass-passivated junction SUPERECTIFIER(R) * Fast switching for high efficiency * Low leakage current, typical IR less than 0.1 A * High forward surge capability * Meets environmental standard MIL-S-19500 * Solder dip 275 C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For general purpose of medium frequency rectification. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 1.0 A VRRM 400 V to 1000 V IFSM 20 A trr 150 ns, 250 ns, 500 ns IR 5.0 A VF 1.3 V TJ max. 175 C Case: DO-204AL, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL BA157GP BA158GP BA159DGP BA159GP UNIT Maximum repetitive peak reverse voltage VRRM 400 600 800 1000 V Maximum RMS voltage VRMS 280 420 560 700 V Maximum DC blocking voltage VDC 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 C IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 20 A TJ, TSTG - 65 to + 175 C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A Maximum DC reverse current at rated DC blocking voltage TA = 25 C SYMBOL BA158GP BA159DGP BA159GP UNIT VF 1.3 V IR 5.0 A Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ Document Number: 88537 Revision: 15-Mar-11 BA157GP 150 250 500 15 500 ns pF For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BA157GP thru BA159GP Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL BA157GP BA158GP RJA (1) Typical thermal resistance BA159DGP BA159GP 55 UNIT C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.336 54 5500 13" Diameter paper tape and reel BA158GP-E3/54 BA158GP-E3/73 0.336 73 3000 Ammo pack packaging BA158GPHE3/54 (1) 0.336 54 5500 13" Diameter paper tape and reel BA158GPHE3/73 (1) 0.336 73 3000 Ammo pack packaging Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0 1 0.1 0.01 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ambient Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 100 TA = 25 C 10 ms Single Half Sine-Wave at Rated Load 15 10 5 Instantaneous Reverse Current (A) 20 Peak Forward Surge Current (A) TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 10 TJ = 125 C 1 TJ = 75 C 0.1 TJ = 25 C 0.01 0 1 10 100 0 20 40 60 80 Number of Cycles at 50 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics www.vishay.com 2 100 For technical questions within your region, please contact one of the following: Document Number: 88537 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BA157GP thru BA159GP Vishay General Semiconductor 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (C/W) Junction Capacitance (pF) 100 10 1 1 10 10 1 0.1 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Note 0.026 (0.66) * Lead diameter is for suffix "E" part numbers 0.023 (0.58) Document Number: 88537 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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