CMPD7000 DUAL SILICON SWITCHING DIODE SERIES CONNECTION SOT-23 CASE MAXIMUM RATINGS (Ta=25C) Central . Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD7000typeis an ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded surface mount package, connected ina series configuration, designed for high speed switching applications. Marking Code is C5C. SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 100 Vv Average Forward Current lo 200 mA Peak Forward Current lFM 500 mA Power Dissipation Pp 350 mW Operating and Storage Junction Temperature Ty T stg -65 to +150 C Thermal Resistance OJA 357 OCW ELECTRICAL CHARACTERISTICS (T,a=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BVR IR=t00pA 100 V Ip VpR=50V 300 nA Ip VR=50V, Ta=125C 100 pA IR VR=100V 500 nA VE Ip=1.0mA 0.55 0.70 Vv Ve Ip=10mA 0.67 0.82 V Ve lp=100mA 0.75 1.10 V Cr VpR=0, f=1 MHz 1.5 pF ter IR=!IF=10mA, Ry =1002, Rec. to 1.0mA 2.0 4.0 ns 182All dimensions in inches (mm). ~-110(2.80) -118(3.00) -003(0.08) -083(2.10) -006(0.15) .041(1,05) NOMINAL cwommat [fT | 2 T .106(2.70) t .047(1.189) MAXIMUM | .063(1.60) = 4 .005(0, | 3 MAXIMUM .014(0.35) .037(0.94) 7020(0.50) -050(1.28) C1 A2 DATA SHEET Ai, C2 R2 183