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December 17,2010-REV.00
BC856AW ~ BC859CW
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE 30/45/65 V olts 200 mWatts
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current IC = 100mA
• Complimentary (NPN) Devices:BC846W/BC847W/BC848W/
BC849W Series
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-323, Plastic
• Termin als: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
CURRENT
ABSOLUTE MAXIMUM RATINGS
PARAMETER Symbol Value Units
Co lle ctor - Emitter Vo lt a g e BC856W
BC857W
BC858W, BC859W V
CEO
-65
-45
-30 V
C olle ctor - B as e Vo lta ge BC856W
BC857W
BC858W, BC859W V
CBO
-80
-50
-30 V
Emitte r - Base Voltag e BC856W
BC857W
BC858W, BC859W V
EBO
6.0
6.0
-5.0 V
Col lector Cur rent - Cont inuous I
C
-100 mA
Max P ower D issipation (Note 1) P
TOT
200 mW
Storage Temperature Range T
STG
-55 to 15 0
O
C
Junction Temperature Range T
J
-55 to 15 0
O
C
Device Marking:
BC856AW=56A BC857AW=57A BC858AW=58A
BC856BW=56B BC857BW=57B BC858BW=58B BC859BW=59B
BC857CW=57C BC858CW=58C BC859CW=59C