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UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R214-005,A
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
TO-3PL
*Pb-free plating product number: 2SC5200L
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 230 V
Collector-Emitter Voltage VCEO 230 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 15 A
Base Current IB 1.5 A
Collector Power Dissipation (Tc=25℃) PC 150 W
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 ~ 150 ℃
ELECTRICAL CHARACTERISTICS (Tc=25℃)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage V(BR) CEO I
C= 50mA, IB=0 230 V
Collector-Emitter Saturation Voltage VCE (sat) I
C= 8A, IB= 0.8A 0.40 3.0 V
Base -Emitter Voltage VBE V
CE= 5V, IC= 7A 1.0 1.5 V
Collector Cut-off Current ICBO V
CB = 230V, IE=0 5.0
μA
Emitter Cut-off Current IEBO V
EB= 5V, IC=0 5.0
μA
hFE1 V
CE= 5V, IC= 1A 55 160 DC Current Gain
hFE2 V
CE= 5V, IC= 7A 35 60
Transition Frequency fT V
CE= 5V, IC= 1A 30 MHz
Collector Output Capacitance Cob V
CB= 10V, IE=0, f=1MHz 200 pF
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160
CLASSIFICATION OF HFE1
RANK R O
Range 55 ~ 110 80 ~ 160