©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A
BUZ11
30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Features
• 30A, 50V
•r
DS(ON)
= 0.040
Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ11 TO-220AB BUZ11
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
June 1999 File Number 2253.2
[ /Title
(BUZ1
1)
/Sub-
ject
(30A,
50V,
0.040
Ohm,
N-
Chan-
nel
Power
MOS-
FET)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel
Power
MOS-
FET,
TO-
220AB
)
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
Data Sheet
©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ11 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
50 V
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
50 V
Continuous Drain Current T
C
= 30
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
30 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
120 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
75 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250
µ
A, V
GS
= 0V 50 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA (Figure 9) 2.1 3 4 V
Zero Gate Voltage Drain Current I
DSS
T
J
= 25
o
C, V
DS
= 50V, V
GS
= 0V - 20 250
µ
A
T
J
= 125
o
C, V
DS
= 50V, V
GS
= 0V - 100 1000
µ
A
Gate to Source Leakage Current I
GSS
V
GS
= 20V, V
DS
= 0V - 10 100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 15A, V
GS
= 10V (Figure 8) - 0.03 0.04
Ω
Forward Transconductance (Note 2) gfs V
DS
= 25V, I
D
= 15A (Figure 11) 4 8 - S
Turn-On Delay Time t
d(ON)
V
CC
= 30V, I
D
≈
3A, V
GS
= 10V, R
GS
= 50
Ω,
R
L
= 10
Ω
-3045ns
Rise Time t
r
- 70 110 ns
Turn-Off Delay Time t
d(OFF)
- 180 230 ns
Fall Time t
f
- 130 170 ns
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 10) - 1500 2000 pF
Output Capacitance C
OSS
- 750 1100 pF
Reverse Transfer Capacitance C
RSS
- 250 400 pF
Thermal Resistance Junction to Case R
θ
JC
≤
1.67
o
C/W
Thermal Resistance Junction to Ambient R
θ
JA
≤
75
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
SD
T
C
= 25
o
C--30A
Pulsed Source to Drain Current I
SDM
T
C
= 25
o
C - - 120 A
Source to Drain Diode Voltage V
SD
T
J
= 25
o
C, I
SD
= 60A, V
GS
= 0V - 1.7 2.6 V
Reverse Recovery Time t
rr
T
J
= 25
o
C, I
SD
= 30A, dI
SD
/dt = 100A/
µ
s,
V
R
= 30V
- 200 - ns
Reverse Recovery Charge Q
RR
- 0.25 -
µ
C
NOTES:
2. Pulse Test: Pulse width
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
BUZ11
©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
TA, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125
40
30
20
10
00 50 100 150
TC, CASE TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
VGS > 10V
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
ZθJC, TRANSIENT THERMAL IMPEDANCE
1
0.1
0.01
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
t1
t2
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
100µs
10µs
DC
1ms
10ms
100ms
103
102
101
100
100101102
2.5µs
OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
60
50
40
30
20
10
0
ID, DRAIN CURRENT (A)
0123456
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 8.0V
VGS = 7.5V
VGS = 7.0V
VGS = 6.5V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
10V
VGS = 20V PULSE DURATION = 80µs
PD = 75W DUTY CYCLE = 0.5% MAX
BUZ11
©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A
FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
20
15
10
5
0
IDS(ON), DRAIN TO SOURCE CURRENT (A)
01234 5678
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
VDS = 25V
DUTY CYCLE = 0.5% MAX
0.15
0.10
0.05
00 204060
ID, DRAIN CURRENT (A)
rDS(ON), ON-STATE RESISTANCE (Ω)
5.5V
6V
6.5V
7V
7.5V
8V
9V
20V
10V
PULSE DURATION = 80µs
VGS = 5V
DUTY CYCLE = 0.5% MAX
-50 0 50 100 150
rDS(ON), DRAIN TO SOURCE
0.08
0.06
0.04
0.02
0
TJ, JUNCTION TEMPERATURE (oC)
ID = 15A, VGS = 10V
PULSE DURATION = 80µs
ON RESISTANCE (Ω)
DUTY CYCLE = 0.5% MAX
-50 0 50 100 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
4
3
2
1
0
TJ, JUNCTION TEMPERATURE (oC)
ID = 1mA
VDS = VGS
020 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
10-2
10-1
100
C, CAPACITANCE (nF)
101
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
10
8
6
4
2
0
0 5 10 15 20
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
TJ = 25oC
PULSE DURATION = 80µs
VDS = 25V
DUTY CYCLE = 0.5% MAX
BUZ11
©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
00.5 1.0 1.5 2.0 2.5 3.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
103
102
101
100
10-1
ISD, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
TJ = 25oC
TJ = 150oC
DUTY CYCLE = 0.5% MAX
15
10
5
00 1020304050
Qg, GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 45A
VDS = 10V
VDS = 40V
VGS
RL
RG
DUT
+
-
VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
Ig(REF)
0
BUZ11
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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