SFH 203 P
SFH 203 PFA
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
Silicon PIN Photodiod e with Very Short Sw itching Tim e
SFH 203 P SFH 203 PFA
2001-02-22 1
Wesentliche Merkmale
Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm (SFH 203 P) und bei
880 nm (SFH 203 PFA)
Kurze Schaltzeit (typ. 5 ns)
5 mm-Plastikbauform im LED-Gehäuse
Anwendungen
Industrieelektronik
„Messen/Steuern/Regeln“
Schnelle Lichtschranken für Gleich- und
Wechsellichtbetrieb
•LWL
Typ
Type Bestellnummer
Ordering Code
SFH 203 P Q62702-P946
SFH 203 PFA Q62702-P947
Features
Especially suitable for applications from
400 nm to 1100 nm (SFH 203 P) and of 880 nm
(SFH 203 PFA)
Short switching time (typ. 5 ns)
5 mm LED plastic package
Applications
Industrial electronics
For control and drive circuits
Photointerrupters
Fiber optic transmission systems
2001-02-22 2
SFH 203 P, SFH 203 PFA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg 40 + 100 °C
Löttemperatur (Lötstelle 2 mm vom Gehäuse
entfernt bei Lötzeit t 3 s)
Soldering temperature in 2 mm dist ance from case
bottom (t 3 s)
TS300 °C
Sperrspannung
Reverse voltage VR50 V
Verlustleistung
Total power dissipation Ptot 100 mW
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 203 P SFH 203 PFA
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A,
T = 2856 K, EV = 1000 lx
VR = 5 V, λ = 950 nm, Ee = 1 mW/cm2
IP
IP
9.5 ( 5)
6.2 ( 3.6)
µA
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 1100 750 1100 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A 11 mm
2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L×B
L×W1×11×1mm×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H0.4 0.7 0.4 0.7 mm
Halbwinkel
Half angle ϕ±75 ±75 Grad
deg.
SFH 203 P, SFH 203 PFA
2001-02-22 3
Dunkelstrom, VR = 20 V
Dark current IR 1 ( 10) 1 ( 10) nA
Spektrale Fotoempfindlichke it, λ = 850 nm
Spectral sensitivity Sλ0.62 0.59 A/W
Quantenausbeute, λ = 850 nm
Quantum yield η0.89 0.86 Electrons
Photon
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
VO
VO
350 ( 300)
300 ( 250)
mV
mV
Kurzschlußstrom
Short-cir cuit current
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
ISC
ISC
9.3
3.0
µA
µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 20 V; λ = 850 nm; Ip = 800 µA
tr, tf55 ns
Durchlaßspannung, IF = 80 mA, E = 0
Forward voltage VF1.3 1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C011 11 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV 2.6 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
λ = 950 nm
TCI
0.18
0.2
%/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 20 V, λ = 850 nm
NEP 2.9 ×10 14 2.9 ×10 14
Nachweisgrenze, VR = 20 V, λ = 850 nm
Detection limit D* 3.5 ×1012 3.5 ×1012
Kennwerte (TA = 25 °C)
Characteristics (contd)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 203 P SFH 203 PFA
W
Hz
------------
cm Hz×
W
--------------------------
SFH 203 P, SFH 203 PFA
2001-02-22 4
Relati ve Sp ectral Sensi ti vi ty
SFH 203 P, Srel = f (λ)
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit Voltag e VO = f (Ee)
SFH 203 PFA
Directional Chara cter i sti cs
Srel = f (ϕ)
λ
OHF01129
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
E
OHF01765
e
0
10
P
Ι
-2
10 10 110 210 4
10 -1
10 0
10 1
10 24
10
3
10
2
10
1
10
10 0
VO
µ
AmV
Ι
P
VO
2
W/cm
µ
Relative Spectr. Sensitivity
SFH 203 PFA, Srel = f (λ)
Photocurrent IP = f (Ev), VR = 5 V
Open-Ci r cu it V oltage VO = f (Ev)
SFH 203 P
λ
OHF01773
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
E
OHF01025
V
0
10
P
Ι
-1
10 10
1
10
2
10
4
10
0
10
0
V
O
µAmV
Ι
P
V
O
10
3
lx
1
10
2
10 10
3
10
2
1
10
Total Pow er Di ssip ation
Ptot = f (TA)
Dark Current
IR = f (VR), E = 0
Capacitance
C = f (VR), f = 1 MHz, E = 0
OHR00883
0
F
I
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
V
OHF01026
R
R
Ι
0
4
10
3
10
2
10
10 1
pA
20 V 3010
SFH 203 P, SFH 203 PFA
2001-02-22 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are spe cified as follows: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be cons idered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endange red.
0.6 (0.024)
0.4 (0.016)
5.9 (0.232)
5.5 (0.217)
1.0 (0.039)
0.5 (0.020)
3.85 (0.152)
3.35 (0.132)
5.0 (0.197)
4.2 (0.165)
29 (1.142)
27 (1.063)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
0.4 (0.016)
ø5.1 (0.201)
ø4.8 (0.189)
Chip position
Area not flat
GEOY6648
Cathode