BAS28
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28 consists
of two electrically isolated ultra-high speed silicon
switching diodes manufactured by the epitaxial planar
process and packaged in an epoxy molded SOT-143
surface mount case. This device is designed for high
speed switching applications.
MARKING CODE: A61 or JTW
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Continuous Reverse Voltage VR 75 V
Peak Repetitive Reverse Voltage VRRM 85 V
Continuous Forward Current IF 250 mA
Peak Repetitive Forward Current IFRM 500 mA
Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A
Peak Forward Surge Current, tp=1.0ms IFSM 2.0 A
Peak Forward Surge Current, tp=1.0s IFSM 1.0 A
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=25V, TA=150°C 30 μA
IR V
R=75V 1.0 μA
IR V
R=75V, TA=150°C 50 μA
VF I
F=1.0mA 715 mV
VF I
F=10mA 855 mV
VF I
F=50mA 1.00 V
VF I
F=150mA 1.25 V
CT V
R=0, f=1.0MHz 2.0 pF
trr I
F=IR=10mA, Irr=1.0mA, RL=100Ω 6.0 ns
Qs I
F=10mA, VR=5.0V, RL=500Ω 45 pC
VFR I
F=10mA, tr=20ns 1.75 V
SOT-143 CASE
R7 (20-October 2010)
www.centralsemi.com
BAS28
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE D1
2) CATHODE D2
3) ANODE D2
4) ANODE D1
MARKING CODE: A61 or JTW
PIN CONFIGURATION
www.centralsemi.com
R7 (20-October 2010)
