MOTOROLA Order this document by MMUN2211LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2211LT1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. NPN SILICON BIAS RESISTOR TRANSISTOR * Simplifies Circuit Design PIN 3 COLLECTOR (OUTPUT) * Reduces Board Space * Reduces Component Count * The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. * Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the13 inch/10,000 unit reel. 3 R1 1 PIN 1 R2 BASE (INPUT) 2 PIN 2 EMITTER (GROUND) CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ TA = 25C(1) Derate above 25C PD *200 1.6 mW mW/C RJA 625 C/W TJ, Tstg - 65 to +150 C TL 260 10 C Sec Rating THERMAL CHARACTERISTICS Thermal Resistance -- Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1(2) MMUN2216LT1(2) MMUN2230LT1(2) MMUN2231LT1(2) MMUN2232LT1(2) MMUN2233LT1(2) MMUN2234LT1(2) A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L 10 22 47 10 10 4.7 1 22 2.2 4.7 4.7 22 10 22 47 47 1 22 2.2 4.7 47 47 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces MMUN2211T1/D) Small-Signal Motorola Motorola, Inc. 1996 Transistors, FETs and Diodes Device Data 1 MMUN2211LT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO -- -- 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO -- -- 500 nAdc IEBO -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 -- -- Vdc Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 -- -- Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 350 350 5.0 15 30 200 150 -- -- -- -- -- -- -- -- -- -- -- VCE(sat) -- -- 0.25 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 -- -- OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k ) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2213LT1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k ) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 VOH Vdc Vdc Vdc 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMUN2211LT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 k R1/R2 0.8 0.17 -- 0.8 0.055 0.38 1.0 0.21 -- 1.0 0.1 0.47 1.2 0.25 -- 1.2 0.185 0.56 ON CHARACTERISTICS(3) Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MMUN2211LT1 SERIES PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RJA = 625C/W 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1 1 IC/IB = 10 TA = -25C 25C 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) versus IC 4 VCE = 10 V TA = 75C 25C -25C Cob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) 1000 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 3 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 100 10 25C Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) TA = -25C 1 0.1 0.01 25C 75C 1 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 Figure 5. VCE(sat) versus IC 4 TA = -25C VO = 0.2 V 75C 10 50 Figure 4. Output Capacitance Figure 3. DC Current Gain 0.001 80 9 10 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 6. VCE(sat) versus IC Motorola Small-Signal Transistors, FETs and Diodes Device Data MMUN2211LT1 SERIES - 1000 1 IC/IB = 10 h FE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1 TA = -25C 25C 75C 0.1 0.01 VCE = 10 V TA = 75C 25C -25C 100 10 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 f = 1 MHz lE = 0 V TA = 25C IC , COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 3 2 1 0 0 10 20 30 100 50 40 75C 25C TA = -25C 10 1 0.1 0.01 VO = 5 V 0.001 2 0 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 Vin , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MMUN2211LT1 SERIES 1000 10 IC/IB = 10 TA = -25C 25C h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1 75C 1 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA = 75C 25C -25C 100 10 80 10 1 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 I C , COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 25C 75C f = 1 MHz lE = 0 V TA = 25C 0.8 100 0.6 0.4 0.2 10 TA = -25C 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMUN2211LT1 SERIES 1 300 TA = -25C IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 200 -25C 150 100 50 0 80 TA = 75C VCE = 10 250 1 2 4 Figure 17. VCE(sat) versus IC 100 75C 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 3.5 Cob , CAPACITANCE (pF) 80 90 100 Figure 18. DC Current Gain 4 2.5 2 1.5 1 0.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 6 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25C TA = -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage 10 TA = -25C V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MMUN2211LT1 SERIES TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal 8 Figure 24. Inexpensive, Unregulated Current Source Motorola Small-Signal Transistors, FETs and Diodes Device Data MMUN2211LT1 SERIES INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA . Using the values provided on the data sheet, PD can be calculated as follows. PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150C - 25C 625C/W = 200 milliwatts The 625C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a power dissipation of 400 milliwatts can be achieved using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small-Signal Transistors, FETs and Diodes Device Data 9 MMUN2211LT1 SERIES SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 25 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the STEP 1 PREHEAT ZONE 1 "RAMP" 200C STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 -189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205 TO "SPIKE" "SOAK" 219C 170C PEAK AT SOLDER 160C JOINT 150C 100C 140C 100C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 25. Typical Solder Heating Profile 10 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMUN2211LT1 SERIES PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C D H K J CASE 318-08 ISSUE AE SOT-23 (TO-236AB) Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 11 MMUN2211LT1 SERIES Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 12 *MMUN2211LT1/D* Motorola Small-Signal Transistors, FETs and Diodes Device Data MMUN2211LT1/D