MMUN2211LT1/D - ON Semiconductor

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its

external resistor bias network. The BRT (Bias Resistor Transistor) contains a single

transistor with a monolithic bias network consisting of two resistors; a series base

resistor and a base-emitter resistor . The BR T eliminates these individual components

by integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SOT-23 package which is

designed for low power surface mount applications.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•The SOT-23 package can be soldered using wave or

reflow. The modified gull-winged leads absorb thermal

stress during soldering eliminating the possibility of

damage to the die.

•Available in 8 mm embossed tape and reel. Use the

Device Number to order the 7 inch/3000 unit reel.

Replace “T1” with “T3” in the Device Number to order

the13 inch/10,000 unit reel.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Base Voltage VCBO 50 Vdc

Collector-Emitter V oltage VCEO 50 Vdc

Collector Current IC100 mAdc

Total Power Dissipation @ TA = 25°C(1)

Derate above 25°CPD*200

1.6 mW

mW/°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction-to-Ambient (surface mounted) RθJA 625 °C/W

Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C

Maximum Temperature for Soldering Purposes,

T ime in Solder Bath TL260

10 °C

Sec

DEVICE MARKING AND RESISTOR VALUES

Device Marking R1 (K) R2 (K)

MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

A8A

A8B

A8C

A8D

MMUN2214LT1

MMUN2215LT1(2)

MMUN2216LT1(2)

MMUN2230LT1(2)

MMUN2231LT1(2)

A8D

A8E

A8F

A8G

A8H

4.7

∞

MMUN2231LT1(2)

MMUN2232LT1(2)

MMUN2233LT1(2)

MMUN2234LT1(2)

A8H

A8J

A8K

A8L

4.7

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MMUN2211T1/D)

Order this document

by MMUN2211LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1996

NPN SILICON

BIAS RESISTOR

TRANSISTOR

Motorola Preferred Devices

CASE 318-08, STYLE 6

SOT-23 (TO-236AB)

MMUN2211LT1

SERIES

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

MMUN2211LT1 SERIES

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutof f Current (V CB = 50 V, IE = 0) ICBO — — 100 nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc

Emitter-Base Cutoff Current MMUN2211LT1

(VEB = 6.0 V, IC = 0) MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

IEBO —

—

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc

Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc

ON CHARACTERISTICS(3)

DC Current Gain MMUN2211LT1

(VCE = 10 V, IC = 5.0 mA) MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

hFE 35

160

3.0

8.0

100

140

350

5.0

200

150

—

Collector-Emitter Saturation V oltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1

(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1

MMUN2232LT1/MMUN2233LT1/MMUN2234LT1

VCE(sat) — — 0.25 Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) MMUN2211LT1

MMUN2212LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) MMUN2213LT1

VOL —

—

0.2

Vdc

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω) MMUN2230LT1

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2215LT1

MMUN2216LT1

MMUN2233LT1

VOH 4.9 — — Vdc

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

MMUN2211LT1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS(3)

Input Resistor MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

R1 7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

4.7

1.0

2.2

4.7

28.6

61.1

6.1

1.3

2.9

6.1

28.6

k Ω

Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1

MMUN2214LT1

MMUN2215LT1/MMUN2216LT1

MMUN2230LT1/MMUN2231LT1/MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

R1/R2 0.8

0.17

—

0.8

0.055

0.38

1.0

0.21

—

1.0

0.1

0.47

1.2

0.25

—

1.2

0.185

0.56

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

MMUN2211LT1 SERIES

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2211LT1

1002030

IC, COLLECTOR CURRENT (mA)

0.1

Vin, INPUT VOLTAGE (VOL TS)

TA= –25°C

75°C

25°C

40 50

0.1

0.01

0.001020 406080

IC, COLLECTOR CURRENT (mA)

VCE(sat), MAXIMUM COLLECTOR VOLT AGE (VOLTS)

1000

100

10 1 10 100

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN (NORMALIZED)

TA=75°C

25°C

–25°C

TA= –25°C

25°C

IC/IB = 10

75°C25°C

TA= –25°C

100

0.1

0.01

0.001 01234

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

5678910

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

Cob, CAPACITANCE (pF)

75°C

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

VCE = 10 V

VO = 0.2 V

Figure 1. Derating Curve

250

200

150

100

0–50 0 50 100 150

TA, AMBIENT TEMPERA TURE (°C)

PD, POWER DISSIPA TION (MILLIWA TTS)

RθJA = 625°C/W

Figure 2. VCE(sat) versus IC

Figure 3. DC Current Gain Figure 4. Output Capacitance

Figure 5. VCE(sat) versus ICFigure 6. VCE(sat) versus IC

MMUN2211LT1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2212LT1

Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain

Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage

1000

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN (NORMALIZED)

100

101 100

75°C 25°C

100

0Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

0.1

0.01

0.001 246810

TA= –25°C

0IC, COLLECTOR CURRENT (mA)

100

Vin, INPUT VOLTAGE (VOLTS)

TA= –25°C

75°C

0.1 10 20 30 40 50

Figure 11. Input Voltage versus Output Current

0.001

VCE(sat), MAXIMUM COLLECTOR VOLT AGE (VOLTS)

TA= –25°C

75°C

25°C

0.01

0.1

IC, COLLECTOR CURRENT (mA)

020 6080

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

Cob, CAPACITANCE (pF)

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

25°C

TA=75°C

–25°C

VCE = 10 V

25°C

–

MMUN2211LT1 SERIES

6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2213LT1

Figure 12. VCE(sat) versus IC

0246810

100

0.1

0.01

0.001

IC, COLLECTOR CURRENT (mA)

Vin, INPUT VOLTAGE (VOLTS)

TA= –25°C

75°C25°C

Figure 13. DC Current Gain

Figure 14. Output Capacitance

100

0.1 010 20304050

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 15. Output Current versus Input Voltage

1000

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN (NORMALIZED)

TA=75°C

25°C

–25°C

100

101 100

Figure 16. Input Voltage versus Output Current

0 204060 80

0.1

0.01

IC, COLLECTOR CURRENT (mA)

TA= –25°C

25°C75°C

CE(sat)

IMUM

COLLECTOR

VOLTAGE

(VOLTS)

TA= –25°C25°C

75°C

010203040

0.8

0.6

0.4

0.2

VR, REVERSE BIAS VOLTAGE (VOLTS)

Cob, CAPACITANCE (pF)

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

VCE = 10 V

IC/IB = 10

VO = 0.2 V

MMUN2211LT1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2214LT1

0.101020304050

100

10246810

3.5

2.5

1.5

0.5

00 2 4 6 8101520253035404550

VR, REVERSE BIAS VOLTAGE (VOLTS)

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)

Figure 17. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

020406080

CE(sat)

IMUM

COLLECTOR

VOLTAGE

(VOLTS

Figure 18. DC Current Gain

1 10 100

IC, COLLECTOR CURRENT (mA)

Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

CAPACITANCE

(

Figure 21. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

0.1

0.01

0.001

–25°C

25°C

TA=75°C

VCE = 10

300

250

200

150

100

02 4 6 8 15 20 40 50 60 70 80 90

f = 1 MHz

lE = 0 V

TA = 25°C

TA= –25°C

25°C

75°C

IC/IB = 10

75°C25°C

TA= –25°C

VO = 5 V

VO = 0.2 V TA= –25°C

25°C

75°C

MMUN2211LT1 SERIES

8 Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL APPLICATIONS FOR NPN BRTs

LOAD

+12 V

Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

OUT

VCC

ISOLATED

LOAD

FROM µP OR

OTHER LOGIC

Figure 23. Open Collector Inverter: Inverts

the Input Signal Figure 24. Inexpensive, Unregulated Current Source

MMUN2211LT1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT–23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT-23 POWER DISSIPATION

The power dissipation of the SOT-23 is a function of the

pad size. This can vary from the minimum pad size for

soldering to the pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

by TJ(max), the maximum rated junction temperature of the

die, RθJA, the thermal resistance from the device junction to

ambient; and the operating temperature, TA. Using the

values provided on the data sheet, PD can be calculated as

follows.

PD = TJ(max) – TA

RθJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T A of 25°C, one can

calculate the power dissipation of the device which in this

case is 200 milliwatts.

PD = 150°C – 25°C

625°C/W = 200 milliwatts

The 625°C/W assumes the use of the recommended

footprint on a glass epoxy printed circuit board to achieve a

power dissipation of 200 milliwatts. Another alternative would

be to use a ceramic substrate or an aluminum core board

such as Thermal Clad. Using a board material such as

Thermal Clad, a power dissipation of 400 milliwatts can be

achieved using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference should be a maximum of 10°C.

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied during

cooling

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

MMUN2211LT1 SERIES

10 Motorola Small–Signal Transistors, FETs and Diodes Device Data

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control

settings that will give the desired heat pattern. The operator

must set temperatures for several heating zones, and a

figure for belt speed. Taken together, these control settings

make up a heating “profile” for that particular circuit board.

On machines controlled by a computer, the computer

remembers these profiles from one operating session to the

next. Figure 25 shows a typical heating profile for use when

soldering a surface mount device to a printed circuit board.

This profile will vary among soldering systems but it is a good

starting point. Factors that can affect the profile include the

type of soldering system in use, density and types of

components on the board, type of solder used, and the type

of board or substrate material being used. This profile shows

temperature versus time. The line on the graph shows the

actual temperature that might be experienced on the surface

of a test board at or near a central solder joint. The two

profiles are based on a high density and a low density board.

The Vitronics SMD310 convection/infrared reflow soldering

system was used to generate this profile. The type of solder

used was 62/36/2 Tin Lead Silver with a melting point

between 177–189°C. When this type of furnace is used for

solder reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a large surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

STEP 1

PREHEAT

ZONE 1

“RAMP”

STEP 2

VENT

“SOAK”

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

STEP 6

VENT STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO

219°C

PEAK AT

SOLDER

JOINT

DESIRED CUR VE FOR LOW

MASS ASSEMBLIES

DESIRED CUR VE FOR HIGH

MASS ASSEMBLIES

100°C

150°C160°C

170°C

140°C

Figure 25. Typical Solder Heating Profile

MMUN2211LT1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0180 0.0236 0.45 0.60

L0.0350 0.0401 0.89 1.02

S0.0830 0.0984 2.10 2.50

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

MMUN2211LT1 SERIES

12 Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does

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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

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MMUN2211LT1/D

*MMUN2211LT1/D*

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