2007-04-20
1
BF1009S...
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stage up to 1 GHz
• Operating voltage 9 V
• Integrated biasing network
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
G2
G1
GND
AGC
RF
Input
Drain RF Output
+ DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BF1009S
BF1009SR SOT143
SOT143R 1=S
1=D 2=D
2=S 3=G2
3=G1 4=G1
4=G2 -
--
-JLs
JLs
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 12 V
Continuous drain current ID25 mA
Gate 1/ gate 2-source current ±IG1/2SM 10
Gate 1 (external biasing) +VG1SE 3 V
Total power dissipation
TS ≤ 76 °C, BF1009S, BF1009SR Ptot 200 mW
Storage temperature Tstg -55 ... 150 °C
Channel temperature Tch 150
1Pb-containing package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
2007-04-20
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BF1009S...
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point1)
BF1009S, BF1009SR Rthchs ≤ 370 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 500 µA, VG1S = 0 , VG2S = 0 V(BR)DS 12 - - V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 9 - 12
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , VDS = 0 ±V(BR)G2SS 9 - 12
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 +IG1SS - - 60 µA
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 , VDS = 0 ±IG2SS - - 50 nA
Drain current
VDS = 9 V, VG1S = 0 , VG2S = 6 V IDSS - - 500 µA
Operating current (selfbiased)
VDS = 9 V, VG2S = 6 V IDSO 10 13 16 mA
Gate2-source pinch-off voltage
VDS = 9 V, ID = 500 µA VG2S(p) - 0.9 - V
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-20
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BF1009S...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
VDS = 9 V, VG2S = 6 V gfs 26 30 - mS
Gate1 input capacitance
VDS = 9 V, VG2S = 6 V, f = 10 MHz Cg1ss - 2.1 2.7 pF
Output capacitance
VDS = 9 V, VG2S = 6 V, f = 10 MHz Cdss - 0.9 -
Power gain (self biased)
VDS = 9 V, VG2S = 6 V, f = 800 MHz Gp18 22 - dB
Noise figure
VDS = 9 V, VG2S = 6 V, f = 800 MHz F- 1.4 2.1 dB
Gain control range
VDS = 9 V, VG2S = 6 ... 0 V, f = 800 MHz ∆Gp40 50 -
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BF1009S...
Total power dissipation Ptot = ƒ(TS)
BF1009S, BF1009SR
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
mW
220
Ptot
Drain current ID = ƒ(VG2S)
VDS = 9 V
01234V6
VG2S
0
1
2
3
4
5
6
7
8
9
10
11
12
mA
14
ID
Insertion power gain
|S21|² = ƒ(VG2S), f = 200 MHz
01234V6
VG2S
-65
-55
-45
-35
-25
-15
-5
dB
15
lS21l
Forward transfer admittance
|Y21| = ƒ(VG2S), f = 200 MHz
01234V6
VG2S
0
4
8
12
16
20
24
mS
32
lY21l
2007-04-20
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BF1009S...
Gate 1 input capacitance Cg1ss= ƒ(Vg2s)
f = 200 MHz
01234V6
VG2S
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
pF3
Cg1ss
Output capacitance Cdss = ƒ(VG2S)
f = 200 MHz
01234V6
VG2S
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
pF3
Cdss
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BF1009S...
Package SOT143
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
RFs
2005, June
Date code (YM)
BFP181
Type code
56
Pin 1
0.8 0.81.2
0.9 1.1 0.9
1.2
0.8 0.8
0.8-0.05
+0.1
1.9
1.7
±0.1
2.9
+0.1
-0.05
0.4
0.1 MAX.
12
34
0.25 MB
±0.1
1
10˚ MAX.
0.15 MIN.
0.2 A
M
2.4
±0.15
0.2
10˚ MAX.
A
1.3
±0.1
0...8˚
0.08...0.15
2.6
4
3.15
Pin 1
8
0.2
1.15
B
Manufacturer
2007-04-20
7
BF1009S...
Package SOT143R
1.1
0.8 0.81.2
0.90.9
0.8 0.8 1.2
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2.6
4
3.15
Pin 1
8
0.2
1.15
Reverse bar
2005, June
Date code (YM)
BFP181R
Type code
Pin 1
1.9
1.7
0.4
-0.05
+0.1
+0.1
-0.05
0.8
B
0.25
M
B
2.9
±0.1
0.2
12
43
A
0˚... 8˚
10˚
10˚
0.1 MAX.
0.15 MIN.
1.3±0.1
2.4±0.15
1±0.1
0.08...0.15
A
M
0.2
MAX.
MAX.
Manufacturer
2007-04-20
8
BF1009S...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
