RHRG30120 - ON SEMICONDUCTOR

February, 2020 − Rev. 2

1Publication Order Number:

RHRG30120/D

Hyperfast Diode

30 A, 1200 V

RHRG30120

Description

The RHRG30120 is a hyperfast diode with soft recovery

characteristics. It has the half recovery time of ultrafast diodes and is

silicon nitride passivated ionimplanted epitaxial planar construction.

These devices are intended to be used as freewheeling/clamping

diodes and diodes in a variety of switching power supplies and other

power switching applications. Their low stored charge and hyperfast

soft recovery minimize ringing and electrical noise in many power

switching circuits reducing power loss in the switching transistors.

Features

•Hyperfast Recovery trr = 85 ns (@ IF = 30 A)

•Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)

•1200 V Reverse Voltage and High Reliability

•Avalanche Energy Rated

•This Device is Pb−Free and is RoHS Compliant

Applications

•Switching Power Supplies

•Power Switching Circuits

•General Purpose

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage VRRM 1200 V

Working Peak Reverse Voltage VRWM 1200 V

DC Blocking Voltage VR1200 V

Average Rectified Forward Current

(TC = 80°C)

IF(AV) 30 A

Repetitive Peak Surge Current

(Square Wave, 20 kHz)

IFRM 60 A

Nonrepetitive Peak Surge Current

(Halfwave, 1 Phase, 60 Hz)

IFSM 300 A

Maximum Power Dissipation PD125 W

Avalanche Energy

(See Figures 7 and 8)

EAVL 30 mJ

Operating and Storage Temperature TSTG, TJ−65 to 175 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

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TO−247

2 LEAD

CASE 340CL

MARKING DIAGRAM

$Y&Z&3&K

RHRG30120

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

ANODE

CATHODE

(BOTTOM

SIDE METAL)

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

RHRG30120 = Specific Device Code

RHRG30120

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PACKAGE MARKING AND ORDERING INFORMATION

Device Device Marking Package Shipping

RHRG30120 RHRG30120 TO−247−2L 450/Tube

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

VFInstantaneous Forward Voltage

(Pulse Width = 300 ms, Duty Cycle = 2%)

IF = 30 A 3.2 V

IF = 30 A,

TC = 150°C

2.6 V

IRInstantaneous Reverse Current VR = 1200 V 250 mA

VR = 1200 V

TC = 150°C

1 mA

trr Reverse Recovery Time (See Figure 6)

Summation of ta + tb

IF = 1 A,

diF/dt = 100 A/ms

65 ns

IF = 30 A,

diF/dt = 100 A/ms

85 ns

taTime to Reach Peak Reverse Current (See Figure 6) IF = 30 A,

diF/dt = 100 A/ms

48 ns

tbTime from Peak IRM to Projected Zero Crossing of IRM

Based on a Straight Line from Peak IRM Through 25%

of IRM (See Figure 6)

IF = 30 A,

diF/dt = 100 A/ms

22 ns

RqJC Thermal Resistance Junction to Case 1.2 °C/W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

RHRG30120

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TYPICAL PERFORMANCE CURVES

Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage

Figure 3. Trr, ta and tb Curves vs. Forward Current Figure 4. Current Derating Curve

200

100

00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

175oC100oC

25oC

500

100

1.0

0.1

0.01

0.001

0 200 400 600 800 1000 1200

175

100

25oC

IR, Reverse Current (mA)

VR, Reverse Voltage (V)

, Forward Current (A)

, Forward Voltage (V)

IF(AV), Average Forward Current (A)

TC, Case Temperature (5C)

t, Time (ns)

, Forward Current (A)

100

0110

Trr

25 50 75 100 125 150 175

SQ.WAVE

RHRG30120

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TEST CIRCUITS AND WAVEFORMS

Figure 5. Trr Test Circuit Figure 6. Trr Waveforms and Definitions

Figure 7. Avalanche Energy Test Circuit Figure 8. Avalanche Current and Voltage Waveforms

IMAX = 1.225 A

L = 40 mH

R < 0.1 W

EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]

Q1 = IGBT (BVCES > DUT VR(AVL))

IRM

VDD

IGBT

CURRENT

SENSE

DUT

−

dIF

Trr

tatb

0.25IRM

DUT

CURRENT

SENSE

VDD

−

VDD

Q1IV

t0t1t2

VAVL

VGE AMPLITUDE AND

RG CONTROL dlF/dt

t1 AND t2 CONTROL IF

XXXX = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

ZZ = Assembly Lot Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

GENERIC

MARKING DIAGRAM*

AYWWZZ

XXXXXXX

TO−247−2LD

CASE 340CL

ISSUE A

DATE 03 DEC 2019

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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