SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE BCP54
PARTMARKING DETAILS BCP51
BCP51 10
BCP51 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -45 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -1.5 A
Continuous Collector Current IC-1 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -45 V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -45 V IC=- 10mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=-10µA
Collector Cut-Off
Current
ICBO -100
-10
nA
µA
VCB
=-30V
VCB
=-30V, Tamb
=150°C
Emitter Cut-Off Current IEBO -10 µAVEB=-5V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.5 V IC=-500mA, IB=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on) -1.0 V IC=-500mA, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
BCP51-10
BCP51-16
40
25
63
100
100
160
250
160
250
IC=-150mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-150mA, VCE=-2V*
IC=-150mA, VCE=-2V*
Transition Frequency fT125 MHz IC=-50mA, VCE
=-10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
BCP51
C
C
E
B
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