LBAV70WT1-1/4
Dual Switching Diodes
1
3
2
LBAV70WT1
SOT–323 (SC–70)
3
CATHODE
ANODE
1ANODE
2
MAXIMUM RATINGS (TA= 25°C)
Rating Symbol Max Unit
Reverse Voltage V R70 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1) PD200 mW
TA= 25°C
Derate above 25°C 1.6 mW/°C
Thermal Resistance, Junction toAmbient RθJA 0.625 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate(2) TA= 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction toAmbient RθJA 417 °C/W
Junction and Storage Temperature TJ,Tstg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown V oltage V(BR) 70 — Vdc
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR= 70 Vdc) IR1 — 5.0 µAdc
(VR= 50 Vdc) IR2 — 100 nAdc
Diode Capacitance CD— 1.5 pF
(VR= 0, f = 1.0 MHz)
Forward Voltage VFmVdc
(IF= 1.0 mAdc) — 715
(IF= 10 mAdc) — 855
(IF= 50 mAdc) — 1000
(IF= 150 mAdc) — 1250
Reverse Recovery Time trr — 6.0 ns
(IF=IR=10 mAdc, RL= 100Ω,IR(REC)= 1.0 mAdc) (Figure 1)
Forward Recovery V oltage VRF — 1.75 V
(IF= 10 mAdc, tr= 20 ns) (Figure 2)
1. FR–5 = 1.0 ×0.75 ×0.062 in.
2.Alumina = 0.4 ×0.3 ×0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
FEATURE
ƽSmall plastic SMD package.
ƽFor high-speed switching applications.
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device Marking Shipping
LBAV70WT1 A4 3000/Tape&Reel
LBAV70WT1G A4
(Pb-Free) 3000/Tape&Reel
LESHAN RADIO COMPANY, LTD.