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RHRU15090, RHRU150100
150A, 900V - 1000V Hyperfast Diodes
RHRU15090 and RHRU150100 (TA49072) are hyperfast
diodes with soft recovery characteristics (tRR < 90ns). They
have half the recovery time of ultrafast diodes and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
• Hyperfast with Soft Recovery<90ns
• Operating Temperature+175oC
• Reverse Voltage Up To1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-218
Symbol
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU15090 TO-218 RHRU15090
RHRU150100 TO-218 RHR150100
NOTE: When ordering, use the entire part number. ANODE
CATHODE
(FLANGE)
K
A
RHRU15090 RHRU150100 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 900 1000 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 900 1000 V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR900 1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = +42oC) 150 150 A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Square Wave, 20kHz) 300 300 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz) 1500 1500 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD375 375 W
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 50 50 mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ-65 to +175 -65 to +175 oC
April 1995 File Number 3589.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Electrical Specifications TC = +25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION
LIMITS
UNITS
RHRU15090 RHRU150100
MIN TYP MAX MIN TYP MAX
VFIF = 150A, TC = +25oC - - 3.0 - - 3.0 V
VFIF = 150A, TC = +150oC - - 2.5 - - 2.5 V
IRVR = 900V, TC = +25oC - - 500 - - - µA
VR = 1000V, TC = +25oC -----500µA
IRVR = 900V, TC = +150oC - - 3.0 - - - mA
VR = 1000V, TC = +150oC -----3.0mA
tRR IF = 1A, dIF/dt = 100A/µs - -90- -90ns
IF = 150A, dIF/dt = 100A/µs - - 100 - - 100 ns
tAIF = 150A, dIF/dt = 100A/µs - 65 - - 65 - ns
tBIF = 150A, dIF/dt = 100A/µs - 30 - - 30 - ns
RθJC - - 0.4 - - 0.4 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
C1
LLOOP
DUT
Q3
R3
Q4
Q2
R1
R2
-V4
Q1
-V2
0
0
+V1
t1
t2
t3R4
+V3
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF R4t1≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1
R4
tA(MIN)
10
≤
+LLOOP
IFtRR
tAtB
0
IRM
0.25 IRM
VR
VRM
dIF
dt
RHRU15090, RHRU150100
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Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
FIGURE 5. TYPICAL tRR,t
AAND tBCURVES vs FORWARD
CURRENT FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT ANDVOLTAGE WAVEFORMS
VF, FORWARD VOLTAGE (V)
500
100
10
10 0.5 1.0 1.5 2.5 3.02.0 3.5
+175oC+100oC
+25oC
IF, FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
3000
100
10
1.0
0 1000200 800600400
1000 +175oC
0.01
0.1
+100oC
+25oC
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A) 100101
0
100
20
80
40
120
60
150
tA
tB
tRR
t, RECOVERY TIMES (ns)
IF(AV), AVERAGE FORWARD CURRENT (A)
TC, CASE TEMPERATURE (oC)
120
025 50 75 100 150 175
125
40
80
160
DC
SQ. WAVE
12V
Q2
Q1
12V
130Ω
DUT
CURRENT
SENSE
+
LR
1MΩ
VDD
130Ω
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 & Q2 ARE 1000V MOSFETs
-
VDD
IV
t0t1t2
IL
VAVL
t
RHRU15090, RHRU150100
