Features
•Over temperature shutdown
•Over current shutdown
•Active clamp
•Low current & logic level input
•E.S.D protection
IPS021(S)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60148-K
Description
The IPS021/IPS021S are fully protected three termin al
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 5A. These devices
restart once the input is cycled. The avalanche capa-
bility is significantly enhanced by the active clamp
and covers most inductive load demagnetizations.
Packages
Product Summary
Rds(on) 150mΩ (max)
V clamp 50V
Ishutdown 5A
Ton/Toff 1.5µs
3-Lead D2Pak
IPS021S
3-Lead TO-220
IPS021
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Typical Connection
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS021(S)
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(1) Limited by junction temperature (pulsed current limited also by internal wir ing)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage — 47
Vin Maximum input voltage -0.3 7
Iin, max Maximum IN current -10 +10 mA
Isd cont. Diode max. continous current (1)
(rth=62oC/W) IPS021 — 2.8
(rth=10oC/W) IPS021 — 8
(r th=80oC/W) IPS021S — 2.2
Isd pulsed Diode max. pulsed current (1) — 10A
Pd Maximum power dissipation(1)
(rth=62oC/W) IPS021 — 2
(r th=80oC/W) IPS021S — 1.56
ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55
150
Tj max. Max. junction temperature. -40
150
Tlead Lead temperature (soldering, 10 seconds) — 300
V
W
A
kV
oC
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth 1 Thermal resistance free air — 60 —
Rth 2 Thermal resistance junction to case — 5 —
Rth 1 Thermal resistance with standard footprint — 80 —
Rth 2 Thermal resistance with 1" square footprint — 50 —
Rth 3 Thermal resistance junction to case — 5 —
Thermal Characteristics
TO-220
D2PAK (SMD220)
oC/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous drain to source voltage — 35
VIH High level input voltage 4 6
VIL Low level input voltage 0 0.5
Ids Continuous drain current — 1. 8 A
Tamb=85oC (TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC)
Rin Recommended resistor in series with IN pin 0.5 5 k
Ω
Tr-in (max) Max recommended rise time for IN signal (see fig. 2) — 1 µS
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
V
IPS021(S)
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Symbol P arameter Min. Typ. Max. Units Test Conditions
Tsd Over temperature threshold —165 — oC See fig. 1
Isd Over current threshold 4 5.5 7 A See fig. 1
Vreset IN protection reset threshold 1.5 2.3 3 V
Treset Time to reset protection 210 40 µs Vin = 0V, Tj = 25oC
EOI_OT Short circuit energy (see application note) —400 — µJV
cc = 14V
Protection Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rds(on) ON state resistance Tj = 25 oC 100 130 150
Tj = 150oC — 220 280
Idss 1 Drain to source leakage current 0 0.01 25 Vcc = 14V, Tj = 25oC
Idss 2 Drain to source leakage current 0 0 .1 50 Vcc = 40V, Tj = 25oC
V clamp 1 Drain to source clamp voltage 1 48 54 56 Id = 20mA (see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2 50 56 60
Vin clamp IN to source clamp voltage 7 8 9.5 Iin = 1 mA
Vth IN threshold voltage 1 1.5 2 Id = 50mA, Vds = 14V
Iin, -on ON state IN positive current 25 90 200 Vin = 5V
Iin, -off ON state IN positive current 50 130 250 Vin = 5V
over-current triggered
Static Electrical Characteristics
Standard footprint 70 µm copper thickness. Tj = 25oC (unless otherwise specified.)
mΩVin = 5V, Ids = 1A
Id=Ishutdown (see Fig.3 & 4)
µA
V
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 10Ω, Rinput = 50Ω, 100µs pulse, Tj = 25oC, (unless otherwise specified).
Symbol Parameter Min. Typ. Max. Units Test Conditions
Ton Turn-on delay time 0.15 0.5 1
TrRise time 0.4 0.9 2
Trf Time to (final R ds(on) 1.3) 2612
Toff Turn-off delay time 0.8 23.5
TfFall time 0.5 1.3 2.5
Qin Total gate charge —3.3 —nC Vin = 5V
See figure 2
See figure 2
µs
µA
IPS021(S)
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Lead Assignments
Part Number
1 2 3
In D S
TO-220
IPS021
2 (D)
D2PAK (SMD220)
IPS021S
1 3
In D S
2 (D)
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8.1 V
80
µ
A
47 V
I sense
200 k
Ω
1000
Ω
S Q
R Q
T > 165°c
I > Isd
IPS021(S)
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14 V
IN D
S
5 v
0 v
L
R+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clam
p
Vds clam
p
(
Vcc
)
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on Td of f tf
tr
Ids
Tr-in
V
i
n
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 °c)
Vin
Ids
Isd I shutdown
TT shutdown
t < T reset t > T reset
5 V
0 V
IPS021(S)
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All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
Figure 6 - Normalized Rds(on) (%) Vs Tj (oC)Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)
Tj = 150oC
Tj = 25oC
0
50
100
150
200
250
300
012345678
0%
20%
40%
60%
80%
100%
120%
140%
160%
180%
200%
-50 -25 0 25 50 75 100 125 150 175
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
Figure 7 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs Input Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
012345678
ton de la
y
rise time
130% rdson
0
1
2
3
4
012345678
toff de lay
fall time
IPS021(S)
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Figure 9 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs IN Resistor (Ω)Figure 10 - Turn-OFF Delay Time & Fall Time (us)
Vs IN Resistor (Ω)
0.1
1
10
100
10 100 1000 10000
dela y on
rise time
130% rdson
0.1
1
10
100
10 100 1000 10000
delay off
fa ll ti me
Figure 12 - I shutdown (A) Vs Temperature (oC)Figure 11 - Current Iim. & I shutdown (A)
Vs Vin (V)
0
2
4
6
8
012345678
Isd 25°C
Il im 25°C 0
1
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150
IPS021(S)
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Figure 15b - Max. Iclamp (A) Vs Inductive Load
(mH) IPS021S
0.1
1
10
0.01 0.1 1 10 100
single pulse
100 Hz rth =60°C/W dT= 25°C
1kHz rth=6 0°C/W dT =25°C
Vbat = 14 V
Tjini = T sd
Figure 14 - Ids (A) Vs Protection Resp. Time (s)
IPS021 & IPS021S
1
10
100
T=25°C Std. footprint
T=100°C Std. footprint
Current path capability
should be above this curve
Load characteristic should
be below this curve
Figure 15a - Iclamp (A) Vs Inductive Load (mH)
IPS021
Figure 13 - Max.Cont. Ids (A)
Vs Amb. Temperature (oC) IPS021/IPS021S
0.1
1
10
0.01 0.1 1 10 100
sin
le pulse m ax. current
100 Hz rt h =60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
Vbat = 14 V
Tjini = T sd
0
1
2
3
4
5
6
7
8
-50 0 50 100 150 200
rth = 5°C/W
rth = 15°C/W
1 " footprint 35°C/W
std. f ootp rint 60 °C/W
IPS021(S)
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Figure 16 - Transient Thermal Imped. ( oC/W)
Vs Time (s)
0.01
0.1
1
10
100
Single pulse
Figure 17 - Input Current (uA) Vs
Junction Temperature (oC)
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125 150
Iin,on
Iin,off
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
Treset
rise time
fall time
Figure 18 - Rise Time, Fall Time and Treset (µs)
Vs Tj (oC) Figure 19 -Vin clamp and Vds clamp (%) Vs
Tj ( oC)
80%
85%
90%
95%
100%
105%
110%
115%
120%
-50-250 255075100125150
Vds clamp @ Isd
Vin clamp @ 10mA
IPS021(S)
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01-6024 00
IRGB 01-3026 01 (TO-220AB)
Case Outline
NOTES:
2
2X 3-Lead TO-220AB
3-Lead D2PAK 01-6022 00
01-0016 05 (TO-263AB)
IPS021(S)
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Tape & Reel - D2PAK (SMD220)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/11/2001
01-3072 00
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/