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FEATURES
■Double Side Cooling
■High Surge Capability
■Low Inductance Internal Construction
APPLICATIONS
■High Power Converters
■DC Motor Control
■High Voltage Power Supplies
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1660Y63
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
VDRM 6500V
IT(AV) 1665A
ITSM (max) 28000A
dV/dt 1000V/µs
dI/dt 300A/µs
DCR1660Y
Phase Control Thyristor
Target Information
DS5499-1.2 February 2002
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
6500
6400
6300
6200
6100
6000
DCR1660Y65
DCR1660Y64
DCR1660Y63
DCR1660Y62
DCR1660Y61
DCR1660Y60
Part and Ordering
Number Repetitive Peak
Voltages
VDRM and VDRM
V
Fig. 1 Package outline
Outline type code: Y
(See Package Details for further information)
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Symbol
IT(AV)
IT(RMS)
IT
IT(AV)
IT(RMS)
IT
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
1665
2600
2478
1112
1746
1556
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
Symbol
IT(AV)
IT(RMS)
IT
IT(AV)
IT(RMS)
IT
Tcase = 80˚C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
1323
2077
1944
876
1376
1196
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
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Parameter
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
I2t for fusing
Test Conditions
10ms half sine, Tcase = 125˚C
VR = 50% VRRM - 1/4 sine
10ms half sine, Tcase = 125˚C
VR = 0
Symbol
ITSM
I2t
ITSM
I2t
SURGE RATINGS
Units
kA
A2s
kA
A2s
Max.
22.0
2.4 x 106
28.0
3.92 x 106
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Test Conditions
At VRRM/VDRM, Tcase = 125˚C
To 67% VDRM, Tj = 125˚C
From 67% VDRM,
Repetitive 50Hz
Gate source 30V, 15Ω,
Non-repetitive
tr ≤ 0.5µs, Tj = 125˚C
At Tvj = 125˚C
At Tvj = 125˚C
VD = 67% VDRM, gate source 30V, 15Ω
tr = 0.5µs, Tj = 25˚C
IT = 1000A, tp = 1ms, Tj =125˚C,
VR = 100V, dIRR/dt = 10A/µs,
VDR = 67% VDRM,
dVDR/dt = 25V/µs linear
Tj = 25˚C, VD = 10V
Tj = 25˚C, VG–K = ∞
Symbol
IRRM/IRRM
dV/dt
dI/dt
VT(TO)
rT
tgd
tq
IL
IH
DYNAMIC CHARACTERISTICS
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
µs
mA
mA
Max.
300
1000
150
300
1.2
0.61
1.5
-
600
200
Min.
-
-
-
-
-
-
0.5
1500
-
-
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Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 4
-
Symbol
VGT
IGT
VGD
VFGM
VFGN
VRGM
IFGM
PGM
PG(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.0
300
0.25
30
0.25
5
10
150
5
Units
V
mA
V
V
V
V
A
W
W
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled DC
Single side cooled Anode DC
Cathode DC
Clamping force 50kN Double side
(with mounting compound) Single side
On-state (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Tstg
Fm
Units
˚CW
˚CW
˚CW
˚CW
˚CW
˚C
˚C
˚C
kN
Max.
0.0095
0.019
0.019
0.002
0.004
135
125
125
55.0
Min.
-
-
-
-
-
-
-
–55
45.0
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CURVES
Fig.2 Maximum (limit) on-state characteristics Fig.3 Power dissipation
0
500
1000
1500
2000
2500
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
T
j
= 125˚C
0
1000
2000
3000
4000
5000
6000
7000
8000
0 500 1000 1500 2000 2500 3000
Mean on-state current, IT(AV) - (A)
Mean power dissipation - (W)
dc
dc
1/2 wave
3 phase
6 phase
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Fig.4 Gate characteristics
Fig.5 Gate characteristics
Gate trigger current, I
GT
- (A)
Gate trigger voltage, V
GT
- (V)
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
j
= 125˚C
T
j
= 25˚C
T
j
= -40˚C
Preferred gate drive area
Upper limit
Lower limit
Pulse Width
µs
100
200
500
1000
10000
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
Table gives pulse power P
GM
in Watts
Gate trigger current, I
GT
- (A)
Gate trigger voltage, V
GT
- (V)
012345678910
0
5
10
15
20
25 Upper Limit
Lower Limit
5W
10W
20W
50W
100W
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Fig.6 Stored charge Fig.7 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
Fig.8 Sub-cycle surge currents Fig.9 Multi-cycle surge currents
10000
1000
100
Total stored charge, Q
RA3
- (µC)
0.1 1.0 10
Rate of decay of on-state current, dI/dt - (A/µs) 100
Max
Min
Conditions:
T
j
= 125˚C
I
T
= 550A
V
R
= 100V
I
RR
Q
RA3
I
T
dI/dt
25% I
RR
1010.10.010.001 Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance - (˚C/W)
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
0
10
20
30
40
50
60
70
80
90
Peak half sine on-state current - (kA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
110
Pulse length, half sine wave - (ms)98765432
I
2
t value - (A
2
s x 10
6
)
I
TSM
(V
R
= 0)
I
TSM
(V
R
= 50% V
RRM
)
I
2
t (V
R
= 0)
I
2
t (V
R
= 50% V
RRM
)
0
5
10
15
20
25
30
0 102030405060
Number of cycles @ 50Hz
Peak half sine wave on-state current - (kA)
Surge current (V
R
= 0)
Surge current (V
R
= 50% V
RRM
)
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PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
37.7
36.0
Ø1.5
Cathode
Gate
Anode
Ø73 nom
Ø112.5 max
Ø73 nom
Nominal weight: 1600g
Clamping force: 50kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: Y
Cathode tab
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5499-1 Issue No. 1.2 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
