TPCA8065-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCA8065-H 1. Applications * High-Efficiency DC-DC Converters * Notebook PCs * Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.7 m (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2010-09-02 Rev.3.0 TPCA8065-H unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit V Drain-source voltage VDSS 30 Gate-source voltage VGSS 20 Drain current (DC) (Note 1) ID 16 Drain current (pulsed) (Note 1) IDP 48 Power dissipation (Tc = 25) Power dissipation (t = 10 s) (Note 2) Power dissipation (t = 10 s) Single-pulse avalanche energy A PD 25 W PD 2.8 W (Note 3) PD 1.6 W (Note 4) EAS 66 mJ Avalanche current IAR 16 A Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25) Symbol Max Unit Rth(ch-c) 5.0 /W Channel-to-ambient thermal resistance (t = 10 s) (Note 2) Rth(ch-a) 44.6 Channel-to-ambient thermal resistance (t = 10 s) (Note 3) Rth(ch-a) 78.1 /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.2 mH, RG = 1.2 , IAR = 16 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Note: Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2010-09-02 Rev.3.0 TPCA8065-H unless otherwise specified) 6. Electrical Characteristics (Ta = 25 25 6.1. Static Characteristics Characteristics Symbol Gate leakage current VGS = 20 V, VDS = 0 V Typ. Max Unit 0.1 A IDSS VDS = 30 V, VGS = 0 V 10 ID = 10 mA, VGS = 0 V 30 V(BR)DSX ID = 10 mA, VGS = -20 V 15 Vth VDS = 10 V, ID = 0.2 mA 1.3 2.3 VGS = 4.5 V, ID = 8 A 11.7 14.5 VGS = 10 V, ID = 8 A 9.4 11.4 Min Typ. Max Unit 1350 1600 pF Gate threshold voltage Drain-source on-resistance IGSS Min V(BR)DSS Drain cut-off current Drain-source breakdown voltage Test Condition RDS(ON) V m 6.2. Dynamic Characteristics Characteristics Symbol Input capacitance Ciss Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss 63 96 Output capacitance Coss 240 Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz 1.0 1.4 2.1 Switching time (rise time) tr See Figure 6.2.1. 2.2 ns Switching time (turn-on time) ton 8.2 tf 2.3 toff 17 Min Typ. Max Unit nC Switching time (fall time) Switching time (turn-off time) Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Test Condition VDD 24 V, VGS = 10 V, ID = 16 A 20 VDD 24 V, VGS = 5 V, ID = 16 A 9.9 VDD 24 V, VGS = 10 V, ID = 16 A Gate-source charge 1 Qgs1 4.4 Gate-drain charge Qgd 2.1 Gate switch charge QSW 4.3 Min Typ. Max Unit 6.4. Source-Drain Characteristics Characteristics Pulsed reverse drain current Diode forward voltage Symbol (Note 5) Test Condition IDRP 48 A VDSF IDR = 16 A, VGS = 0 V -1.2 V Note 5: Ensure that the channel temperature does not exceed 150. 3 2010-09-02 Rev.3.0 TPCA8065-H 7. Marking Fig. 7.1 Marking 4 2010-09-02 Rev.3.0 TPCA8065-H 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2010-09-02 Rev.3.0 TPCA8065-H Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Ta (Guaranteed Maximum) Fig. 8.12 PD - Tc (Guaranteed Maximum) 6 2010-09-02 Rev.3.0 TPCA8065-H Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2010-09-02 Rev.3.0 TPCA8065-H Package Dimensions Unit: mm Weight: 0.069 g (typ.) Package Name(s) TOSHIBA: 2-5Q1S Nickname: SOP Advance 8 2010-09-02 Rev.3.0 TPCA8065-H RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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