BT169D-L,112 - NXP Semiconductors

1. Product profile

1.1 General description

Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92)

plastic package.

1.2 Features and benefits

Planar passivated for voltage

ruggedness and reliability

Very sensitive gate

1.3 Applications

Ignition circuits

Low power latching circuits

Protection / shut-down circuits: lighting

ballasts

Protection / shut-down circuits:

Switched Mode Power Supplies

1.4 Quick reference data

BT169D-L

SCR

Rev. 6 — 20 March 2012 Product data sheet

TO-92

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-state

voltage - - 400 V

VRRM repetitive peak reverse voltage - - 400 V

ITSM non-repetitive peak on-state

current half sine wave; Tj(init) =25°C;

tp= 10 ms; see Figure 4; see Figure 5 --8A

IT(RMS) RMS on-state current half sine wave; Tlead ≤83 °C;

see Figure 1; see Figure 2 --0.8A

Static characteristics

IGT gate trigger current VD=12V; I

T=10mA; T

j=25°C;

see Figure 7 --50µA

IHholding current VD=12V; T

j= 25 °C; see Figure 9 -0.41mA

ILlatching current VD=12V; I

G= 0.5 mA; Tj=25°C;

see Figure 8 - 24mA

Product data sheet Rev. 6 — 20 March 2012 2 of 12

NXP Semiconductors BT169D-L

SCR

2. Pinning information

3. Ordering information

4. Limiting values

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphic symbol

1 A anode

SOT54 (TO-92)

2 G gate

3 K cathode

123

sym037

Table 3. Ordering information

Type number Package

Name Description Version

BT169D-L TO-92 plastic single-end ed leaded (through hole) package; 3 leads SOT54

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state volt age - 400 V

VRRM repetitive peak reverse voltage - 400 V

IT(AV) average on-state current half sine wave; Tlead ≤83 °C; see Figure 3 -0.5A

IT(RMS) RMS on-state current half sine wave; Tlead ≤83 °C; see Figure 1;

see Figure 2 -0.8A

ITSM non-repetitive peak on-state

current half sine wave; Tj(init) =25°C; t

p=8.3ms - 9 A

half sine wave; Tj(init) =25°C; t

p= 10 ms;

see Figure 4; see Figure 5 -8A

I2tI

2t for fusing tp= 10 ms; sine-wave pulse - 0.32 A2s

dIT/dt rate of rise of on-state current IT=2A; I

G=10mA; dI

G/dt = 100 mA/µs - 50 A/µs

IGM peak gate current - 1 A

VRGM peak reverse gate voltage - 5 V

PGM peak gate power - 2 W

PG(AV) a v erage gate power over any 20 ms period - 0.1 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

Product data sheet Rev. 6 — 20 March 2012 3 of 12

NXP Semiconductors BT169D-L

SCR

Fig 1. RMS on-state current as a function of surge

duration for sinusoidal currents Fig 2. RMS on-state cu rrent as a function of lead

temperature; maximum values

Fig 3. T otal po wer dissipation as a function of average on-state curren t; maximum values

001aab449

0.5

1.5

IT(RMS)

(A)

surge duration (s)

10−210−1101

Tlead (°C)

−50 150100050

001aab450

0.4

0.6

0.2

0.8

IT(RMS)

(A)

(1)

001aab446

0.4

0.2

0.6

0.8

Ptot

(W)

101

113

125

IT(AV) (A)

0 0.60.40.20.1 0.50.3

a =

1.57

2.2

1.9

2.8

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

Tlead(max)

(°C)

Product data sheet Rev. 6 — 20 March 2012 4 of 12

NXP Semiconductors BT169D-L

SCR

Fig 4. No n-repetitive peak on-state curre nt as a function of the number of sinusoidal current cyc les; maximum

values

Fig 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values

001aab499

ITSM

(A)

number of cycles

1 103

102

Tj(init) = 25 °C max

ITITSM

001aab497

tp (s)

10−510−2

10−3

10−4

102

103

ITSM

(A)

Tj(init) = 25 °C max

ITITSM

Product data sheet Rev. 6 — 20 March 2012 5 of 12

NXP Semiconductors BT169D-L

SCR

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-lead) thermal resistance from junction to

lead see Figure 6 --60K/W

Rth(j-a) thermal resistance from junction to

ambient printed circuit board mounted:

lead length = 4 mm - 150 - K/W

Fig 6. Transient thermal impedance from junction to le ad as a function of pulse width

001aab451

102

10−1

Zth(j-lead)

(K/W)

10−2

tp (s)

10−511010−1

10−2

10−410−3

δ =

Product data sheet Rev. 6 — 20 March 2012 6 of 12

NXP Semiconductors BT169D-L

SCR

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD=12V; I

T=10mA; T

j=25°C;

see Figure 7 --50µA

ILlatching cu rre nt VD=12V; I

G= 0.5 mA; Tj=25°C;

see Figure 8 - 24mA

IHholding current VD=12V; T

j= 25 °C; see Figure 9 -0.41mA

VTon-state voltage IT= 1.2 A; Tj=25°C; see Figure 10 - 1.25 1.7 V

VGT gate trigger voltage VD=12V; I

T=10mA; T

j=25°C;

see Figure 11 -0.50.8V

VD=12V; I

T=10mA; T

j= 125 °C;

see Figure 11 0.2 0.3 - V

IDoff-state current VD=400V; T

j=125°C; R

GK =1kΩ- 0.05 0.1 mA

VD=400V; T

j=25°C; R

GK =1kΩ--2µA

IRreverse current Tj=125°C; R

GK =1kΩ; VR= 400 V - 0.05 0.1 mA

Tj=25°C; R

GK =1kΩ; VR= 400 V - - 2 µA

Dynamic characteri stics

dVD/d t rate of rise of off-stat e vol tage VDM = 268 V; Tj= 125 °C; RGK =1kΩ;

exponential waveform; see Figure 12 500 800 - V/µs

VDM = 268 V; Tj= 125 °C; exponential

waveform; gate open circuit;

see Figure 12

-25-V/µs

Fig 7. Normalized gate trigger cu rrent as a function of

junction temperature Fig 8. Normalized latching current as a function of

junction temperature

Tj (°C)

−50 150100050

001aab502

IGT

IGT(25°C)

Tj (°C)

-50 150100050

003aag891

IL(Tj)

IL(25 °C)

Product data sheet Rev. 6 — 20 March 2012 7 of 12

NXP Semiconductors BT169D-L

SCR

Vo = 1.067 V; Rs = 0.187 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig 9. Normalized holding current as a function of

junction temperature Fig 10. On-state current as a function of on-state

voltage

Fig 11. Normalized gate trigger voltage as a function of

junction temperature Fig 12. Critical rate of rise of off-state voltage as a

function of junction temperature; typical values

Tj (°C)

-50 150100050

003aag890

IH(Tj)

IH(25 °C)

001aab454

VT (V)

0.4 2.821.2

(A)

(1) (2) (3)

Tj (°C)

−50 150100050

001aab501

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

001aab507

Tj (°C)

0 15010050

103

102

104

dVD/dt

(V/μs)

(1)

(2)

Product data sheet Rev. 6 — 20 March 2012 8 of 12

NXP Semiconductors BT169D-L

SCR

7. Package outline

Fig 13. Package outline SOT54 (TO-92)

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

Product data sheet Rev. 6 — 20 March 2012 9 of 12

NXP Semiconductors BT169D-L

SCR

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BT169D-L v.6 20120320 Product data sheet - BT169D-L v.5

Modifications: •Various changes to content.

BT169D-L v.5 20111110 Product data sheet - BT169D-L v.4

Product data sheet Rev. 6 — 20 March 2012 10 of 12

NXP Semiconductors BT169D-L

SCR

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have chan ged since th is document w as published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the shor t data sheet, the

full data sheet shall pre vail.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reaso nably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by custo m er’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specif ication for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Product i on This document contains the product specification.

Product data sheet Rev. 6 — 20 March 2012 11 of 12

NXP Semiconductors BT169D-L

SCR

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, pate nts or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualifi ed,

the product is not suitable for automo tive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors BT169D-L

SCR

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 March 2012

Document identifier: BT169D-L

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Contact information. . . . . . . . . . . . . . . . . . . . . .11