DHG 50 X 1200 NA
preliminary
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
200
IA
V
F
2.11
R1.20 K/W
V
R
=
min.
25
t = 10 ms
Applications:
V
RRM
V1200
30T
VJ
V°C=
T
VJ
°C=mA0.5
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=65°C
d =
P
tot
100 WT
C
°C=
T
VJ
150 °C-40
V
I
RRM
=
=1200
25
25
T
VJ
=45°C
DHG 50 X 1200 NA
V
A
1200
V1200
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
2.74
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
125
V
F0
V1.23T
VJ
=150°C
r
F
30
f = 1 MHz = °C25
mΩ
V2.09T
VJ
=°C
I
F
=A
V
25
2.88
I
F
=A50
I
F
=A50
2x
threshold voltage
slope resistance for power loss calculation only
Backside: Isolated
23 A
T
VJ
=°C
reverse recovery time
A30
200
350
ns
(50 Hz), sine
t
rr
=200 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
SOT-227B (minibloc)
●
rIndustry standard outline
●
rCu base plate internal DCB isolated
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V600
T
VJ
=°C25
T=125°C
VJ
µA
11600 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
g
switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 50 X 1200 NA
preliminary
10.5 3.2
8.6 6.8
I
RMS
A
per terminal 100
R
thCH
K/W0.10
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DHG 50 X 1200 NA 507766Tube 10
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
D
H
G
50
X
1200
NA
Part number
Diode
Sonic Fast Recovery Diode
extreme fast
Parallel legs
SOT-227B (minibloc)
=
=
=
Marking on Product
DHG50X1200NA
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
M
T
Nm1.5
terminal torque 1.1
V
ISOL
V3000
t = 1 second
V2500
t = 1 minute
isolation voltage
d
Spp/App
mm
mm
creepage | striking distance on surface | through air terminal to terminal
d
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 50 X 1200 NA
preliminary
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 50 X 1200 NA
preliminary
300 400 500 600 700 800 900 1000 1100
1
2
3
4
5
6
7
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
=125°C
V
R
=600 V
15 A
30 A
60 A
Fig. 1 Typ. Forward current versus V
F
Fig. 2 Typ. reverse recov.charge Q
rr
vs. di/dt
300 400 500 600 700 800 900 1000 1100
0
10
20
30
40
50
60
70
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
15 A
30 A
60 A
Fig. 3 Typ. peak reverse current I
RM
vs. di/dt
300 400 500 600 700 800 900 1000 1100
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
15 A
30 A
60 A
T
VJ
= 125°C
V
R
=600 V
Fig.4 Typ. recovery time t
rr
versus di/dt
Fig. 5 Typ. recovery energy E
rec
versus di/dt
300 400 500 600 700 800 900 1000 1100
0.0
0.4
0.8
1.2
1.6
2.0
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
=125°C
V
R
= 600 V
15 A
30 A
60 A
0.001 0.01 0.1 1 10
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 6 Typ. transient thermal impedance
2
iR
i
i
1 0.3413 0.0025
2 0.2171 0.03
3 0.3475 0.03
4 0.2941 0.08
IXYS reserves the right to change limits, conditions and dimensions.
©
20110526b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
