MMBT3904 - Diotec Semiconductor

MMBT3904

NPN Surface Mount Si-Epi-Planar Switching Transistors

Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN

Version 2010-04-14

Dimensions - Maße [mm]

1 = B 2 = E 3 = C

Power dissipation – Verlustleistung 250 mW

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

Weight approx. – Gewicht ca. 0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)

MMBT3904

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 40 V

Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V

Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V

Power dissipation – Verlustleistung Ptot 350 mW 1)

Collector current – Kollektorstrom (dc) IC200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

DC current gain – Kollektor-Basis-Stromverhältnis 2)

IC = 0.1 mA, VCE = 1 V

IC = 1 mA, VCE = 1 V

IC = 10 mA, VCE = 1 V

IC = 50 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

hFE

100

–

300

–

h-Parameters at/bei VCE = 10 V, IC = 1 mA, f = 1 kHz

Small signal current gain – Kleinsignal-Stromverstärkung hfe 100 – 400

Input impedance – Eingangs-Impedanz hie 1 kΩ – 10 kΩ

Output admittance – Ausgangs-Leitwert hoe 1 µS – 40 µS

Reverse voltage transfer ratio – Spannungsrückwirkung hre 0.5*10-4 – 8*10-4

1 Valid, if leads are kept at ambient temperature

Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2.5 max

1.3

±0.1

1.1

0.4

2.9

±0.1

1 2

Type

Code

1.9

MMBT3904

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

VCEsat

–

0.2 V

0.3 V

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

VBEsat

0.65 V

–

0.85 V

0.95 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCE = 30 V, VEB = 3 V ICBX – – 50 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VCE = 30 V, - VEB = 3 V IEBV – –- 50 nA

Gain-Bandwidth Product – Transitfrequenz

IC = 10 mA, VCE = 20 V, f = 100 MHz fT300 MHz – –

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 5 V, IE = ie = 0, f = 1 MHz CCBO – – 4 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 8 pf

Noise figure – Rauschzahl

VCE = 5 V, IC = 1 µA, RG = 1 kΩ, f = 1 kHz F – – 5 dB

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

VCC = 3 V, VBE = 0.5 V

IC = 10 mA, IB1 = 1mA

td– – 35 ns

tr– – 35 ns

storage time

fall time

VCC = 3 V, IC = 10 mA,

IB1 = IB2 = 1 mA

ts– – 200 ns

tf– – 50 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft RthA < 357 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren MMBT3906

Marking - Stempelung MMBT3904 = 1AM or 1E

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Valid, if leads are kept at ambient temperature

Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden